US2005100074A1PendingUtilityA1

Laser apparatus in which GaN-based compound surface-emitting semiconductor element is excited with GaN-based compound semiconductor laser element

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Assignee: FUJI PHOTO FILM CO LTDPriority: Sep 10, 1999Filed: Sep 17, 2004Published: May 12, 2005
Est. expirySep 10, 2019(expired)· nominal 20-yr term from priority
Inventors:Yoji OkazakiToshiaki Fukunaga
H01S 5/041B82Y 20/00H01S 5/141H01S 5/3086H01S 5/02326H01S 5/183H01S 5/2009H01S 5/028H01S 5/3216H01S 5/34333
45
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Claims

Abstract

A laser apparatus includes a semiconductor laser element having a first active layer made of a GaN-based compound, and emitting first laser light; and a surface-emitting semiconductor element having a second active layer made of a GaN-based compound, being excited with the first laser light, and emitting second laser light. In addition, the surface-emitting semiconductor element may have a first mirror arranged on one side of the second active layer, and a second mirror may be arranged outside the surface-emitting semiconductor element so that the first and second mirrors form a resonator.

Claims

exact text as granted — not AI-modified
1 .- 9 . (canceled)  
     
     
         10 . A laser apparatus comprising: 
 a semiconductor laser element having a first active layer made of a GaN-based compound, and emitting first laser light;    a surface-emitting semiconductor element having a second active layer made of a GaN-based compound, being excited with said first laser light, and emitting second laser light, and    at least one third semiconductor laser element, each having a third active layer made of a GaN-based compound, and emits third laser light,    said surface-emitting semiconductor element being excited with said third laser light together with said first laser light.    
     
     
         11 . A laser apparatus according to  claim 10 , wherein said second active layer includes a plurality of quantum wells.  
     
     
         12 . A laser apparatus according to  claim 11 , wherein said second active layer includes twenty or more quantum wells.  
     
     
         13 . A laser apparatus according to  claim 10 , wherein said first active layer is made of an InGaN or GaN material, and said second active layer is made of an InGaN material.  
     
     
         14 . A laser apparatus according to  claim 13 , wherein said second active layer includes a plurality of quantum wells.  
     
     
         15 . A laser apparatus according to  claim 14 , wherein said second active layer includes twenty or more quantum wells.  
     
     
         16 . A laser apparatus according to  claim 10 , wherein said first active layer is made of an InGaN or GaN material, and said second active layer is made of a GaNAs or InGaNAs material.  
     
     
         17 . A laser apparatus according to  claim 16 , wherein said second active layer includes a plurality of quantum wells.  
     
     
         18 . A laser apparatus according to  claim 17 , wherein said second active layer includes twenty or more quantum wells.  
     
     
         19 . A laser apparatus comprising: 
 a semiconductor laser element having a first active layer made of a GaN-based compound, and emitting first laser light;    a surface-emitting semiconductor element having a second active layer made of a GaN-based compound, being excited with said first laser light, and emitting second laser light, and    at least one third semiconductor laser element, each having a third active layer made of a GaN-based compound, and emits third laser light,    said surface-emitting semiconductor element being excited with fourth laser light which is produced by polarization coupling of said first and third laser light.    
     
     
         20 . A laser apparatus according to  claim 19 , wherein said second active layer includes a plurality of quantum wells.  
     
     
         21 . A laser apparatus according to  claim 20 , wherein said second active layer includes twenty or more quantum wells.  
     
     
         22 . A laser apparatus according to  claim 19 , wherein said first active layer is made of an InGaN or GaN material, and said second active layer is made of an InGaN material.  
     
     
         23 . A laser apparatus according to  claim 22 , wherein said second active layer includes a plurality of quantum wells.  
     
     
         24 . A laser apparatus according to  claim 23 , wherein said second active layer includes twenty or more quantum wells.  
     
     
         25 . A laser apparatus according to  claim 19 , wherein said first active layer is made of an InGaN or GaN material, and said second active layer is made of a GaNAs or InGaNAs material.  
     
     
         26 . A laser apparatus according to  claim 25 , wherein said second active layer includes a plurality of quantum wells.  
     
     
         27 . A laser apparatus according to  claim 26 , wherein said second active layer includes twenty or more quantum wells.  
     
     
         28 .- 36 . (canceled)  
     
     
         37 . A laser apparatus comprising: 
 a semiconductor laser element having a first active layer made of a GaN-based compound, and emitting first laser light;    a surface-emitting semiconductor element being excited with said first laser light, emits second laser light, and having a second active layer made of a GaN-based compound and a first mirror arranged on one side of said second active layer;    a second mirror arranged outside of said surface-emitting semiconductor element so that said first and second mirrors form a resonator; and    at least one third semiconductor laser element, each having a third active layer made of a GaN-based compound, and emits third laser light,    said surface-emitting semiconductor element being excited with said third laser light together with said first laser light.    
     
     
         38 . A laser apparatus according to  claim 37 , wherein said second active layer includes a plurality of quantum wells.  
     
     
         39 . A laser apparatus according to  claim 38 , wherein said second active layer includes twenty or more quantum wells.  
     
     
         40 . A laser apparatus according to  claim 37 , wherein said first active layer is made of an InGaN or GaN material, and said second active layer is made of an InGaN material.  
     
     
         41 . A laser apparatus according to  claim 40 , wherein said second active layer includes a plurality of quantum wells.  
     
     
         42 . A laser apparatus according to  claim 41 , wherein said second active layer includes twenty or more quantum wells.  
     
     
         43 . A laser apparatus according to  claim 37 , wherein said first active layer is made of an InGaN or GaN material, and said second active layer is made of a GaNAs or InGaNAs material.  
     
     
         44 . A laser apparatus according to  claim 43 , wherein said second active layer includes a plurality of quantum wells.  
     
     
         45 . A laser apparatus according to  claim 44 , wherein said second active layer includes twenty or more quantum wells.  
     
     
         46 . A laser apparatus comprising: 
 a semiconductor laser element having a first active layer made of a GaN-based compound, and emitting first laser light;    a surface-emitting semiconductor element being excited with said first laser light, emits second laser light and having a second active layer made of a GaN-based compound and a first mirror arranged on one side of said second active layer;    a second mirror arranged outside of said surface-emitting semiconductor element so that said first and second mirrors form a resonator; and    at least one third semiconductor laser element, each having a third active layer made of a GaN-based compound, and emits third laser light,    said surface-emitting semiconductor element being excited with fourth laser light which is produced by polarization coupling of said first and third laser light.    
     
     
         47 . A laser apparatus according to  claim 46 , wherein said second active layer includes a plurality of quantum wells.  
     
     
         48 . A laser apparatus according to  claim 47 , wherein said second active layer includes twenty or more quantum wells.  
     
     
         49 . A laser apparatus according to  claim 46 , wherein said first active layer is made of an InGaN or GaN material, and said second active layer is made of an InGaN material.  
     
     
         50 . A laser apparatus according to  claim 49 , wherein said second active layer includes a plurality of quantum wells.  
     
     
         51 . A laser apparatus according to  claim 50 , wherein said second active layer includes twenty or more quantum wells.  
     
     
         52 . A laser apparatus according to  claim 46 , wherein said first active layer is made of an InGaN or GaN material, and said second active layer is made of a GaNAs or InGaNAs material.  
     
     
         53 . A laser apparatus according to  claim 52 , wherein said second active layer includes a plurality of quantum wells.  
     
     
         54 . A laser apparatus according to  claim 53 , wherein said second active layer includes twenty or more quantum wells.

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