Semiconductor device and the fabricating method thereof

Abstract

The object is to pattern extremely fine integrated circuits by forming fine contact holes. The dry etching method is employed to form contact holes to pattern a wiring ( 114 ), using a mask made of metallic film ( 112 ) and an organic material as an inter-layer insulating film ( 111 ) for covering switching elements and each of the wirings.

1 - 12 . (canceled)  
   
   
       13 . A method for fabricating a semiconductor device comprising the steps of: 
 forming a thin film transistor over a substrate having an insulating surface;    forming an inter-layer insulating film comprising an organic material over said thin film transistor;    forming a first metallic film over said inter-layer insulating film;    patterning said first metallic film to form a first metallic layer;    etching said inter-layer insulating film to form a contact hole therein by using said first metallic layer as a mask;    forming a second metallic film to cover said first metallic layer and said contact hole, and    patterning said first metallic layer and said second metallic film to form wiring, wherein a part of said wiring has a multi-layer structure.    
   
   
       14 . The method for fabricating a semiconductor device according to  claim 13 , wherein said organic material is an organic-based resin material predominantly selected from the group consisting of polyimide, polyimide-amide, polyamide, acrylics, and BCB (benzocyclobutane).  
   
   
       15 . The method for fabricating a semiconductor device according to  claim 13 , wherein said first metallic film and said second metallic film are deposited by a sputtering method.  
   
   
       16 . A method for fabricating a semiconductor device comprising the steps of: 
 forming a first conductive layer on an insulating surface;    forming an inter-layer insulating film comprising an organic material over said first conductive layer;    forming a first metallic film over said inter-layer insulating film;    patterning said first metallic film to form a first metallic layer;    etching said inter-layer insulating film to form a contact hole by using said first metallic layer as a mask;    forming a second metallic film over said first metallic layer and said contact hole;    forming an inorganic film over said second metallic film;    patterning said first metallic layer, said second metallic film, and said inorganic film to form a wiring having an inorganic layer on the upper surface thereof, and    forming a second conductive layer in contact with said wiring to form a capacitor between said wiring and said second conductive layer with said inorganic layer as a dielectric substance.    
   
   
       17 . The method for fabricating a semiconductor device according to  claim 16 , wherein said inorganic film is deposited by a CVD method.  
   
   
       18 . The method for fabricating a semiconductor device according to  claim 16 , wherein said first metallic film and said second metallic film are deposited by a sputtering method.  
   
   
       19 - 24 . (canceled)  
   
   
       25 . A method for fabricating a semiconductor device comprising the steps of: 
 forming a thin film transistor over a substrate having an insulating surface;    forming an inter-layer insulating film comprising an organic material over said thin film transistor;    forming a first layer over said inter-layer insulating film;    forming contact holes in said inter-layer insulating film by etching said inter-layer insulating;    forming a second layer over said first layer and said contact holes; and    patterning said first layer and said second layer to form wirings, wherein part of said wirings has a multi-layer structure.    
   
   
       26 . The method for fabricating a semiconductor device according to  claim 25 , wherein said inorganic film is deposited by a CVD method.  
   
   
       27 . The method for fabricating a semiconductor device according to  claim 25 , wherein said first layer and said second layer are deposited by a sputtering method.  
   
   
       28 . A method for manufacturing a semiconductor device comprising the steps of: 
 forming an interlayer insulating film over a transistor;    forming a first metallic film over said interlayer insulating film;    patterning said first metallic film to form a first metallic layer;    etching said interlayer insulating film to form a contact hole therein by using said first metallic layer as a mask;    forming a second metallic film on said first metallic layer and in said contact hole wherein said second metallic film is electrically connected to said transistor through said contact hole;    patterning said first metallic layer and said second metallic film to form a wiring,    wherein said wiring includes a portion of said first metallic layer and a portion of said second metallic film.    
   
   
       29 . The method according to  claim 28  wherein said interlayer insulating film comprises an organic material.  
   
   
       30 . The method according to  claim 28  wherein said transistor is a thin film transistor.  
   
   
       31 . A method for manufacturing a semiconductor device comprising the steps of: 
 forming an interlayer insulating film over a conductive layer;    forming a first metallic film over said interlayer insulating film;    patterning said first metallic film to form a first metallic layer;    etching said interlayer insulating film to form a contact hole therein by using said first metallic layer as a mask;    forming a second metallic film on said first metallic layer and in said contact hole wherein said second metallic film is electrically connected to said conductive layer through said contact hole;    patterning said first metallic layer and said second metallic film to form a wiring,    wherein said wiring includes a portion of said first metallic layer and a portion of said second metallic film.    
   
   
       32 . The method according to  claim 31  wherein said interlayer insulating film comprises an organic material.  
   
   
       33 . A method for manufacturing a semiconductor device comprising the steps of: 
 forming an interlayer insulating film over a first conductive layer;    forming a first metallic film over said interlayer insulating film;    patterning said first metallic film to form a first metallic layer;    etching said interlayer insulating film to form a contact hole therein by using said first metallic layer as a mask;    forming a second metallic film on said first metallic layer and in said contact hole wherein said second metallic film is electrically connected to said first conductive layer through said contact hole;    forming a second insulating film on said second metallic film;    patterning said second insulating film, said first metallic layer and said second metallic film to form a wiring wherein a surface of the wiring is covered with a portion of said second insulating film; and    forming a second conductive layer on said second insulating film to form a capacitor between said second conductive layer and said wiring with said portion of said second insulating film interposed therebeween,    wherein said wiring includes a portion of said first metallic layer and a portion of said second metallic film.    
   
   
       34 . The method according to  claim 33  wherein said interlayer insulating film comprises an organic material.