US2005098115A1PendingUtilityA1
Atmospheric substrate processing apparatus for depositing multiple layers on a substrate
Est. expiryAug 23, 2021(expired)· nominal 20-yr term from priority
H10P 72/0461H10P 72/0454C23C 16/54C30B 25/08Y10S414/139
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Claims
Abstract
A substrate processing apparatus is disclosed. In one embodiment, the apparatus includes a first atmospheric deposition station and a second atmospheric deposition station. The second atmospheric deposition station comprises an atmospheric pressure vapor deposition chamber. A substrate handling system is adapted to transfer substrates between the first and the second atmospheric deposition stations.
Claims
exact text as granted — not AI-modified1 - 15 . (canceled)
16 . A method for processing a substrate using a substrate processing apparatus, the method comprising:
(a) depositing a first layer on a substrate at atmospheric pressure at a first atmospheric deposition station; (b) transferring the substrate to an atmospheric vapor deposition chamber at a second atmospheric deposition station using a substrate transfer system; and (c) depositing a second layer on the substrate at atmospheric pressure within the atmospheric vapor deposition chamber at atmospheric pressure.
17 . The method of claim 16 wherein the substrate is a semiconductor substrate.
18 . The method of claim 16 wherein the first atmospheric deposition station comprises a spin coating chamber.
19 . The method of claim 16 further comprising:
forming a porous dielectric layer from the deposited first layer, and wherein depositing the second layer on the substrate comprises depositing the second layer on the porous dielectric layer.
20 . The method of claim 19 wherein the porous layer and the cap layer comprise dielectric materials.
21 . The method of claim 16 further comprising:
curing the first layer at a curing station.
22 . The method of claim 16 wherein the atmospheric vapor deposition chamber is an atmospheric chemical vapor deposition (APCVD) chamber.
23 . The method of claim 16 wherein depositing the first layer comprises depositing a liquid on the substrate.Join the waitlist — get patent alerts
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