US2005098115A1PendingUtilityA1

Atmospheric substrate processing apparatus for depositing multiple layers on a substrate

Assignee: APPLIED MATERIALS INCPriority: Aug 23, 2001Filed: Nov 17, 2004Published: May 12, 2005
Est. expiryAug 23, 2021(expired)· nominal 20-yr term from priority
H10P 72/0461H10P 72/0454C23C 16/54C30B 25/08Y10S414/139
43
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Claims

Abstract

A substrate processing apparatus is disclosed. In one embodiment, the apparatus includes a first atmospheric deposition station and a second atmospheric deposition station. The second atmospheric deposition station comprises an atmospheric pressure vapor deposition chamber. A substrate handling system is adapted to transfer substrates between the first and the second atmospheric deposition stations.

Claims

exact text as granted — not AI-modified
1 - 15 . (canceled)  
   
   
       16 . A method for processing a substrate using a substrate processing apparatus, the method comprising: 
 (a) depositing a first layer on a substrate at atmospheric pressure at a first atmospheric deposition station;    (b) transferring the substrate to an atmospheric vapor deposition chamber at a second atmospheric deposition station using a substrate transfer system; and    (c) depositing a second layer on the substrate at atmospheric pressure within the atmospheric vapor deposition chamber at atmospheric pressure.    
   
   
       17 . The method of  claim 16  wherein the substrate is a semiconductor substrate.  
   
   
       18 . The method of  claim 16  wherein the first atmospheric deposition station comprises a spin coating chamber.  
   
   
       19 . The method of  claim 16  further comprising: 
 forming a porous dielectric layer from the deposited first layer, and wherein depositing the second layer on the substrate comprises depositing the second layer on the porous dielectric layer.    
   
   
       20 . The method of  claim 19  wherein the porous layer and the cap layer comprise dielectric materials.  
   
   
       21 . The method of  claim 16  further comprising: 
 curing the first layer at a curing station.    
   
   
       22 . The method of  claim 16  wherein the atmospheric vapor deposition chamber is an atmospheric chemical vapor deposition (APCVD) chamber.  
   
   
       23 . The method of  claim 16  wherein depositing the first layer comprises depositing a liquid on the substrate.

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