Precoat film forming method, idling method of film forming device, loading table structure, film forming device and film forming method

Abstract

The precoat film forming method has the deposition step of feeding processing gas into the film forming device having the loading table structure 18 internally which has the loading table 16 for loading the article W to be processed and depositing the precoat film 22 composed of a TiN film on the surface of the loading table and the stabilization step of exposing and stabilizing the precoat film in NH 3 (ammonia) containing gas by keeping the loading table at a temperature higher than the temperature at the deposition step. By doing this, the precoat film is stabilized, thereby even during a period of idling, there is no need to lower the temperature of the loading table and the throughput can be improved. Further, the film forming method for depositing a predetermined film on the surface of the article W to be processed using high-melting point metallic compound gas and reducing gas in the processing container 4 which can be evacuated feeds oxidizing gas into the processing container during or immediately after the film forming process. By doing this, the sheet resistance can be greatly prevented from a change with time.

1 - 16 . (canceled)  
   
   
       17 . A precoat film forming method of a film forming device having a loading table for loading an object to be processed internally, comprising: 
 a deposition step of feeding processing gas into said film forming device and depositing a precoat TiN film on a surface of said loading table, and    a stabilization step for stabilizing substantially all of said precoat film on said loading table.    
   
   
       18 . A precoat film forming method according to  claim 17 , 
 wherein said stabilization step is carried out by oxidizing said precoat film.    
   
   
       19 . A precoat film forming method according to  claim 18 , 
 wherein said oxidizing at said stabilization step is carried out by exposing said precoat film to an oxidizing gas.    
   
   
       20 . A precoat film forming method according to  claim 19 , 
 wherein said oxidizing gas is O 2  (oxygen) containing gas or H 2 O (moisture) containing gas.    
   
   
       21 . A precoat film forming method according to  claim 17 , 
 wherein a temperature of said loading table at said stabilization step is almost the same as a process temperature when said film forming process is performed for said object to be processed in said film forming device.    
   
   
       22 . A precoat film forming method according to  claim 17 , 
 wherein in said film forming device, a Ti film or a Ti containing film is deposited on said object to be processed.    
   
   
       23 . A film forming method for performing a film forming process of depositing a predetermined film on a surface of an object to be processed using high-melting point metallic compound gas and reducing gas in a processing container which can be evacuated, comprising 
 a step of feeding oxidizing gas into said processing container during said film forming process.    
   
   
       24 . A film forming method for performing a film forming process of depositing a predetermined film by thermal CVD on a surface of an object to be processed using high-melting point metallic compound gas and reducing gas in a processing container which can be evacuated, comprising 
 a step of feeding oxidizing gas into said processing container immediately after said film forming process.    
   
   
       25 . A film forming method according to  claim 23 , 
 wherein said high-melting point metallic compound gas is TiCl 4  gas and said reducing gas is NH 3  gas.    
   
   
       26 . A film forming method according to  claim 23 , wherein said oxidizing gas is O 2  gas.  
   
   
       27 . A film forming method according to  claim 23 , wherein said oxidizing gas is H 2 0 gas.  
   
   
       28 . A precoat film forming method according to  claim 17 , wherein the temperature of the loading table in the stabilization step is substantially the same as that in the deposition step.  
   
   
       29 . A precoat film forming method according to  claim 17 , wherein the temperature of the loading table in the stabilization step is lower than that in the deposition step.