Electronic device and electronic apparatus

Abstract

Performance of an electronic device is highly improved by epitaxially growing a perovskite-type oxide thin film on an inorganic amorphous layer or an organic solid layer in a desired direction; and furthermore, a high performance electronic device is provided by incorporating the electronic device into an integrated circuit, wherein oxide thin layers are formed on the inorganic amorphous layer or the organic solid layer, and the perovskite-type oxide thin film is grown epitaxially on the oxide layer, the oxide thin layers being able to be at least one of strontium oxide, magnesium oxide, cerium oxide, zirconium oxide, yttrium stabilized zirconium oxide, and strontium titanate; and as the perovskite-type oxide thin film, the perovskite-type oxide thin film being a piezoelectric or ferroelectric material, for example, is used.

1 . An electronic device comprising: 
 an inorganic amorphous layer,    an oxide thin layer on the inorganic amorphous layer, and    a perovskite-type epitaxial oxide thin film above the oxide thin layer,    wherein the inorganic amorphous layer comprises at least one of aluminum nitride, glass and amorphous silicon.    
     
     
         2 . The electronic device according to  claim 1 , wherein the oxide thin layer comprises at least one of strontium oxide, barium oxide, calcium oxide, magnesium oxide, cerium oxide, zirconium oxide, and yttrium stabilized zirconium oxide.  
     
     
         3 . An electronic apparatus comprising an electronic device according to  claim 1 .  
     
     
         4 . An electronic device comprising: 
 an inorganic amorphous layer;    an oxide thin layer on the inorganic amorphous layer,    a perovskite-type epitaxial oxide thin film above the oxide thin layer; and    a piezoelectric thin film comprising KNbO 3  above the perovskite-type epitaxial oxide thin film.    
     
     
         5 . The electronic device according to  claim 4 , wherein the inorganic amorphous layer comprises one of silicon oxide, aluminum nitride, glass, and amorphous silicon.  
     
     
         6 . The electronic device according to  claim 4 , wherein the oxide thin layer comprises at least one of strontium oxide, barium oxide, calcium oxide, magnesium oxide, cerium oxide, zirconium oxide, and yttrium-stabilized zirconium oxide.  
     
     
         7 . The electronic device according to  claim 4 , wherein the perovskite-type epitaxial oxide thin film comprises SrTiO 3 .  
     
     
         8 . An electronic device comprising: 
 an inorganic amorphous layer;    an oxide thin layer comprising at least one of strontium oxide, barium oxide, calcium oxide, magnesium oxide, cerium oxide, zirconium oxide, and yttrium-stabilized zirconium oxide, on the inorganic amorphous layer, and    a perovskite-type epitaxial oxide thin film above the oxide thin layer.    
     
     
         9 . An electronic device comprising: 
 an inorganic amorphous layer;    an oxide thin layer on the inorganic amorphous layer; and    a perovskite-type epitaxial oxide thin film with (100) orientation above the oxide thin layer.    
     
     
         10 . An electronic device comprising: 
 an inorganic amorphous layer;    an oxide thin layer on the inorganic amorphous layer; and    an epitaxial oxide thin film with pseudo-cubic crystal (100) orientation above the oxide thin layer.