Method of fabricating a stacked local interconnect structure

Abstract

A method is provided for forming stacked local interconnects that do not extend into higher levels within a multilevel IC device, thereby economizing space available within the IC device and increasing design flexibility. In a first embodiment, the method of the present invention provides a stacked local interconnect which electrically connects a first group of interconnected electrical features with one or more additional isolated groups of interconnected electrical features or one or more isolated individual electrical features. In a second embodiment, the method of the present invention provides a stacked local interconnect which electrically connects an individual electrical feature to one or more additional isolated electrical features.

1 . A method for minimizing etching damage of a semiconductor substrate having a plurality of features, comprising: 
 forming a passivation layer over portions of said semiconductor substrate;    forming an interlayer dielectric over said passivation layer;    selecting one or more device features to be protected from said etching damage during manufacturing operations; and    providing a metallization layer over said one or more device features for protection thereof.    
   
   
       2 . A method for minimizing etching damage of a semiconductor device having a plurality of features on portions thereof comprising: 
 forming a passivation layer over said portions of said semiconductor device;    forming an interlayer dielectric over said passivation layer;    selecting one or more device features to be protected from said etching damage during manufacturing operations; and    providing a metallization layer over said one or more device features for protection thereof.    
   
   
       3 . A method for minimizing etching damage of at least one semiconductor device on a wafer, said at least one semiconductor device having a plurality of features, comprising: 
 forming a passivation layer over portions of said at least one semiconductor device on said wafer;    forming an interlayer dielectric over said passivation layer;    selecting one or more device features to be protected from said etching damage during manufacturing operations; and    providing a metallization layer over said one or more device features for protection thereof.