Bonding a metal component to a low-K dielectric material

Abstract

A dielectric material is strengthened by bonding a metal component to the dielectric matrix. The metal component may be a metal oxide or metal oxide precursor. The metal component may be deposited on the substrate with the dielectric material, or sol-gel chemistry may be used and the liquid solution spin-coated on a substrate.

1 - 12 . (canceled)  
   
   
       13 . A device comprising: 
 a semiconductor substrate having at least one layer with a plurality of conductive metal lines thereon;    a dielectric material between the metal lines, the dielectric material including a metal component bonded thereto comprising between about 1% and about 5% in atomic percent of the dielectric material.    
   
   
       14 . The device of  claim 13  wherein the dielectric material is at least 50% porous.  
   
   
       15 . The device of  claim 13  wherein the dielectric material is carbon-doped oxide.  
   
   
       16 . The device of  claim 13  wherein the dielectric material is fluorine doped silicon dioxide.  
   
   
       17 . The device of  claim 13  wherein the dielectric material is silicon dioxide.  
   
   
       18 . The device of  claim 13  wherein the metal component is an oxide of aluminum.  
   
   
       19 . The device of  claim 13  wherein the metal component is an oxide of magnesium.