US2005093468A1PendingUtilityA1

Active matrix organic electroluminescence device and method of manufacturing the same

Priority: Dec 28, 2001Filed: Dec 6, 2004Published: May 5, 2005
Est. expiryDec 28, 2021(expired)· nominal 20-yr term from priority
Inventors:Jae-Yong Park
G09G 2300/0417G09G 2300/0842G09G 2320/043G09G 3/3233G09G 2330/021G09G 3/3225H05B 33/00H10K 59/12
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Claims

Abstract

An active matrix organic electroluminescence device includes a substrate, a gate line on the substrate, a data line crossing the gate line, a power line parallel with the gate line, a switching thin film transistor electrically connected to the gate line and the data line, wherein the switching thin film transistor includes a first gate electrode, a first active layer, and first source and drain electrodes, a driving thin film transistor electrically connected to the first drain electrode, wherein the driving thin film transistor includes a second gate electrode, a second active layer, and second source and drain electrodes, and a luminescent diode connected to the driving thin film transistor and the power line.

Claims

exact text as granted — not AI-modified
1 - 10 . (canceled)  
     
     
         11 . A method of manufacturing an active matrix organic electroluminescence device, comprising: 
 forming a gate line on a substrate;    forming a data line crossing the gate line;    forming a switching thin film transistor electrically connected to the gate line and the data line, the switching thin film transistor including a first gate electrode, a first active layer, and first source and drain electrodes;    forming a driving thin film transistor electrically connected to the first drain electrode, the driving thin film transistor including a second gate electrode, a second active layer, and second source and drain electrodes;    forming a luminescent diode connected to the second drain electrode; and    forming a power line connected to the luminescent diode.    
     
     
         12 . The method according to  claim 11 , wherein the second active layer includes n-type amorphous silicon.  
     
     
         13 . The method according to  claim 11 , wherein forming the luminescent diode includes forming a first electrode connected to the second drain electrode; forming a emissive layer on the first electrode; and forming a second electrode on the emissive layer.  
     
     
         14 . The method according to  claim 13 , wherein the second electrode is connected to the power line.  
     
     
         15 . The method according to  claim 13 , wherein forming the luminescent diode further includes forming an electron transporting layer on the first electrode and forming a hole transporting layer on the emissive layer.  
     
     
         16 . The method according to  claim 15 , wherein the electron transporting layer and hole transporting layer are organic.  
     
     
         17 . The method according to  claim 13 , wherein the second electrode is transparent.  
     
     
         18 . The method according to  claim 13 , wherein work function of the first electrode is smaller than work function of the second electrode.  
     
     
         19 . The method according to  claim 18 , wherein the first electrode includes one of calcium, aluminum, and magnesium.  
     
     
         20 . The method according to  claim 18 , wherein the second electrode includes indium-tin-oxide.

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