US2005090037A1PendingUtilityA1

Method of copper/copper surface bonding using a conducting polymer for application in IC chip bonding

43
Assignee: CHARTERED SEMICONDUCTOR MFGPriority: Jul 7, 2000Filed: Oct 29, 2004Published: Apr 28, 2005
Est. expiryJul 7, 2020(expired)· nominal 20-yr term from priority
Inventors:Yakub AliyuSimon ChooiMei Sheng ZhouJohn SudijonoSubhash GuptaSudipto Ranendra Roy
H10W 72/9415H10W 72/07236H10W 72/01255H10W 72/923H10W 72/253H10W 72/252H10W 72/225H10W 72/222H10W 72/072H10W 72/012H10W 72/019H10W 72/20
43
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Claims

Abstract

A semiconductor chip having an exposed metal terminating pad thereover, and a separate substrate having a corresponding exposed metal bump thereover are provided. A conducting polymer plug is formed over the exposed metal terminating pad. A conforming interface layer is formed over the conducting polymer plug. The conducting polymer plug of the semiconductor chip is aligned with the corresponding metal bump. The conforming interface layer over the conducting polymer plug is mated with the corresponding metal bump. The conforming interface layer is thermally decomposed, adhering and permanently attaching the conducting polymer plug with the corresponding metal bump. Methods of forming and patterning a nickel carbonyl layer are also disclosed.

Claims

exact text as granted — not AI-modified
1 . A method of bonding a chip to a substrate, comprising the steps of: 
 providing a semiconductor chip having an exposed metal terminating pad thereover, and a separate substrate having a corresponding exposed metal bump thereover;    forming a conducting polymer plug over said exposed metal terminating pad;    forming a conforming interface layer over said conducting polymer plug;    aligning said conducting polymer plug of said semiconductor chip with said corresponding metal bump;    mating said conforming interface layer over said conducting polymer plug with said corresponding metal bump; and    thermally decomposing said conforming interface layer, adhering and permanently attaching said conducting polymer plug of said semiconductor chip with said corresponding metal bump of said separate substrate.    
   
   
       2 - 30 . (canceled)  
   
   
       31 . A chip/substrate structure, comprising: 
 a chip;    a substrate; and    a conforming interface Ni(CO) 4  layer between the chip and the substrate.    
   
   
       32 . The structure of  claim 31 , further comprising: 
 a metal terminating pad on the chip; and    a metal bump on the substrate;    wherein the conforming interface Ni(CO) 4  layer is between the metal terminating pad and the metal bump.    
   
   
       33 . The structure of  claim 31 , further comprising: 
 a metal terminating pad on the chip;    a conducting polymer plug over the metal terminating pad;    a metal track on the substrate; and    a metal bump over at least a portion of the metal track;    wherein the conforming interface Ni(CO) 4  layer is between the conducting polymer plug and the metal bump.    
   
   
       34 . The structure of  claim 31 , further comprising: 
 a copper terminating pad on the chip;    a conducting polymer plug over the copper terminating pad;    a metal track on the substrate; and    a copper bump over at least a portion of the metal track;    wherein the conforming interface Ni(CO) 4  layer is between the conducting polymer plug and the copper bump.    
   
   
       35 . The structure of  claim 31 , further comprising: 
 a copper terminating pad on the chip;    a conducting polymer plug over the copper terminating pad; the conducting polymer plug being comprised of doped polyacetylene, poly (para-phenylene vinylene) (PPV) or polyaniline;    a metal track on the substrate; and    a copper bump over at least a portion of the metal track;    wherein the conforming interface Ni(CO) 4  layer is between the conducting polymer plug and the copper bump.    
   
   
       36 . The structure of  claim 31 , further comprising: 
 a metal terminating pad on the chip;    a conducting polymer plug over the metal terminating pad;    a metal track on the substrate; and    a metal bump over at least a portion of the metal track;    wherein the conforming interface Ni(CO) 4  layer contacts the conducting polymer plug and the metal bump.    
   
   
       37 . A chip/substrate structure, comprising: 
 a chip having a metal terminating pad thereover;    a substrate having a metal bump thereover; and    a conforming interface Ni(CO) 4  layer between the metal terminating pad and the metal bump.    
   
   
       38 . The structure of  claim 37 , further comprising: 
 a conducting polymer plug over the metal terminating pad; and    a metal track on the substrate and under the metal bump;    wherein the conforming interface Ni(CO) 4  layer is between the conducting polymer plug and the metal bump.    
   
   
       39 . The structure of  claim 37 , further comprising: 
 a conducting polymer plug over the metal terminating pad; the conducting polymer plug having a thickness of from about 1000 to 10,000 Å and being comprised of doped polyacetylene, poly (para-phenylene vinylene) (PPV) or polyaniline;    a metal track on the substrate and under the metal bump;    wherein the conforming interface Ni(CO) 4  layer is between the conducting polymer plug and the metal bump.    
   
   
       40 . The structure of  claim 37 , further comprising: 
 a conducting polymer plug over the metal terminating pad; and    a metal track on the substrate and under the metal bump;    wherein the conforming interface Ni(CO) 4  layer contacts the conducting polymer plug and the metal bump.    
   
   
       41  The structure of  claim 37 , wherein the metal terminating pad and the metal bump are each comprised of copper.  
   
   
       42 . The structure of  claim 37 , wherein the conducting polymer plug is from about 3000 to 6000 Å thick.  
   
   
       43 . A chip/substrate structure, comprising: 
 a chip having a metal terminating pad thereover;    a conducting polymer plug over the metal terminating pad;    a substrate having a metal track thereover;    a metal bump over the metal track; and    a conforming interface Ni(CO) 4  layer between the conducting polymer plug and the metal bump.    
   
   
       44 . The structure of  claim 43 , wherein the conforming interface Ni(CO) 4  layer contacts the conducting polymer plug and the metal bump.  
   
   
       45 . The structure of  claim 43 , wherein: 
 the conducting polymer plug having a thickness of from about 1000 to 10,000 Å.    
   
   
       46 . The structure of  claim 43 , wherein: 
 the conducting polymer plug having a thickness of from about 3000 to 6000 Å.    
   
   
       47 . The structure of  claim 43 , wherein: 
 the conducting polymer plug is comprised of doped polyacetylene, poly (para-phenylene vinylene) (PPV) or polyaniline.    
   
   
       48 . The structure of  claim 43 , wherein the metal terminating pad and the metal bump are each comprised of copper.  
   
   
       49 . The method of  claim 43 , wherein the conducting polymer plug is a material doped to degeneracy.

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