US2005089777A1PendingUtilityA1

Method to pattern small features by using a re-flowable hard mask

43
Assignee: CHARTERED SEMICONDUCTOR MFGPriority: Feb 8, 2002Filed: Nov 12, 2004Published: Apr 28, 2005
Est. expiryFeb 8, 2022(expired)· nominal 20-yr term from priority
Inventors:Chew Hoe AngEng Hua LimRandall Cher Liang ChaJia Zhen ZhengElgin QuekMei Sheng ZhouDaniel Yen
H10P 76/4085H10P 50/73H10P 76/4088
43
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Claims

Abstract

A method of forming small features, comprising the following steps. A substrate having a dielectric layer formed thereover is provided. A spacing layer is formed over the dielectric layer. The spacing layer has a thickness equal to the thickness of the small feature to be formed. A patterned, re-flowable masking layer is formed over the spacing layer. The masking layer having a first opening with a width “L”. The patterned, re-flowable masking layer is re-flowed to form a patterned, re-flowed masking layer having a re-flowed first opening with a lower width “l”. The re-flowed first opening lower width “l” being less than the pre-re-flowed first opening width “L”. The spacing layer is etched down to the dielectric layer using the patterned, re-flowed masking layer as a mask to form a second opening within the etched spacing layer having a width equal to the re-flowed first opening lower width “l”. Removing the patterned, re-flowed masking layer. A small feature material is then formed within the second opening and any excess small feature material above the etched spacing layer is removed. The etched spacing layer is removed to form the small feature comprised of the small feature material.

Claims

exact text as granted — not AI-modified
1 . A method of forming small features, comprising the steps of: 
 providing a substrate having a dielectric layer formed thereover;    forming a spacing layer over the dielectric layer; the spacing layer having a thickness equal to the thickness of the small feature to be formed;    forming a patterned, re-flowable masking layer over the spacing layer; the masking layer having a first opening with a width “L”;    re-flowing the patterned, re-flowable masking layer to form a patterned, re-flowed masking layer having a re-flowed first opening with a lower width “l”; the re-flowed first opening lower width “l” being less than the pre-re-flowed first opening width “L”;    etching the spacing layer to the dielectric layer using the patterned, re-flowed masking layer as a mask to form a second opening within the etched spacing layer having a width equal to the re-flowed first opening lower width “l”;    removing the patterned, re-flowed masking layer;    forming a small feature material within the second opening;    removing any excess small feature material above the etched spacing layer; and    removing the etched spacing layer to form the small feature comprised of the small feature material.    
     
     
         2 - 36 . (canceled)  
     
     
         37 . A structure having at least one small feature opening, comprising: 
 a substrate having a dielectric layer thereover;    an etched spacing layer over the dielectric layer; the etched spacing layer having a thickness equal to the thickness of the small features to be formed; the etched spacing layer having at least one first opening with a width “l;” and    a patterned, re-flowed masking oxide layer over the etched spacing layer; the masking layer having at least one second opening with a lower width “l” aligned with the respective at least one etched spacing layer first opening; wherein the width “l” and the lower width “l” are equal.    
     
     
         38 . The structure of  claim 37 , wherein the substrate is formed of silicon or silicon germanium; the etched spacing layer is formed of silicon nitride or silicon oxynitride and the dielectric layer is formed of grown silicon oxide or deposited silicon oxide.  
     
     
         39 . The structure of  claim 37 , wherein the substrate is formed of silicon; the etched spacing layer is formed of silicon nitride; and the dielectric layer is formed of silicon oxide.  
     
     
         40 . The structure of  claim 37 , wherein the width “l” of the at least one etched spacing layer first opening and the lower width “l” of the at least one re-flowed second opening are each from about 200 to 800 Å.  
     
     
         41 . The structure of  claim 37 , wherein the width “l” of the at least one etched spacing layer first opening and the lower width “l” of the at least one re-flowed second opening are each from about 250 to 800 Å.  
     
     
         42 . The structure of  claim 37 , wherein the dielectric layer is from about 15 to 100 Å thick; and the masking oxide layer is from about 400 to 2000 Å thick.  
     
     
         43 . The structure of  claim 37 , wherein the dielectric layer is from about 20 to 50 Å thick; and the masking oxide layer is from about 1000 to 1500 Å thick.  
     
     
         44 . The structure of  claim 37 , wherein the patterned, re-flowed masking layer is patterned, thermally re-flowed masking layer.  
     
     
         45 . A structure having at least one small feature opening, comprising: 
 a substrate having a dielectric layer thereover;    an etched spacing layer over the dielectric layer; the etched spacing layer having a thickness equal to the thickness of the small features to be formed; the etched spacing layer having at least one first opening with a width “l;” and    a patterned, re-flowed masking oxide layer over the etched spacing layer; the masking layer having at least one second opening with a lower width “l” aligned with the respective at least one etched spacing layer first opening; wherein the width “l” and the lower width “l” are equal and are each from about 200 to 800 Å.    
     
     
         46 . The structure of  claim 45 , wherein the substrate is formed of silicon or silicon germanium; the etched spacing layer is formed of silicon nitride or silicon oxynitride and the dielectric layer is formed of grown silicon oxide or deposited silicon oxide.  
     
     
         47 . The structure of  claim 45 , wherein the substrate is formed of silicon; the etched spacing layer is formed of silicon nitride; and the dielectric layer is formed of silicon oxide.  
     
     
         48 . The structure of  claim 45 , wherein the width “l” of the at least one etched spacing layer first opening and the lower width “l” of the at least one re-flowed second opening are each from about 250 to 800 Å.  
     
     
         49 . The structure of  claim 45 , wherein the dielectric layer is from about 15 to 100 Å thick; and the masking oxide layer is from about 400 to 2000 Å thick.  
     
     
         50 . The structure of  claim 45 , wherein the dielectric layer is from about 20 to 50 Å thick; and the masking oxide layer is from about 1000 to 1500 Å thick.  
     
     
         51 . The structure of  claim 45 , wherein the patterned, re-flowed masking layer is patterned, thermally re-flowed masking layer.  
     
     
         52 . A structure having at least one small feature opening, comprising: 
 a substrate having a dielectric layer thereover; the substrate being formed of silicon or silicon germanium; the dielectric layer being formed of grown silicon oxide or deposited silicon oxide;    an etched spacing layer over the dielectric layer; the etched spacing layer having a thickness equal to the thickness of the small features to be formed; the etched spacing layer having at least one first opening with a width “l;” the etched spacing layer being formed of silicon nitride or silicon oxynitride; and    a patterned, re-flowed masking oxide layer over the etched spacing layer; the masking layer having at least one second opening with a lower width “l” aligned with the respective at least one etched spacing layer first opening; wherein the width “l” and the lower width “l” are equal.    
     
     
         53 . The structure of  claim 52 , wherein the substrate is formed of silicon; the etched spacing layer is formed of silicon nitride; and the dielectric layer is formed of silicon oxide.  
     
     
         54 . The structure of  claim 52 , wherein the width “l” of the at least one etched spacing layer first opening and the lower width “l” of the at least one re-flowed second opening are each from about 200 to 800 Å.  
     
     
         55 . The structure of  claim 52 , wherein the width “l” of the at least one etched spacing layer first opening and the lower width “l” of the at least one re-flowed second opening are each from about 250 to 800 Å.  
     
     
         56 . The structure of  claim 52 , wherein the dielectric layer is from about 15 to 100 Å thick; and the masking oxide layer is from about 400 to 2000 Å thick.  
     
     
         57 . The structure of  claim 52 , wherein the dielectric layer is from about 20 to 50 Å thick; and the masking oxide layer is from about 1000 to 1500 Å thick.  
     
     
         58 . The structure of  claim 52 , wherein the patterned, re-flowed masking layer is patterned, thermally re-flowed masking layer.

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