US2005088257A1PendingUtilityA1

Manufacturing process for thin film bulk acoustic resonator (FBAR) filters

Priority: Mar 7, 2003Filed: Nov 18, 2004Published: Apr 28, 2005
Est. expiryMar 7, 2023(expired)· nominal 20-yr term from priority
Y10T29/49002Y10T29/49156H03H 9/02149Y10T29/49155H03H 3/02Y10T29/49005Y10T29/42H03H 2003/0471H03H 3/04
44
PatentIndex Score
0
Cited by
0
References
0
Claims

Abstract

Method for fabricating an acoustical resonator on a substrate having a top surface. First, a depression in said top surface is generated. Next, the depression is filled with a sacrificial material. The filled depression has an upper surface level with said top surface of said substrate. Next, a first electrode is deposited on said upper surface. Then, a layer of piezoelectric material is deposited on said first electrode. A second electrode is deposited on the layer of piezoelectric material using a mass load lift-off process.

Claims

exact text as granted — not AI-modified
1 - 16 . (canceled)  
     
     
         17 . An acoustical resonator comprising: 
 a buffer layer;    a first electrode formed on the buffer layer;    a second electrode formed with a lift-off process; and    a layer of piezoelectric material sandwiched between said first and second electrodes.    
     
     
         18 . The acoustical resonator of  claim 17  wherein said first electrode comprises molybdenum.  
     
     
         19 . The acoustical resonator of  claim 17  wherein said layer of piezoelectric material comprises AlN.  
     
     
         20 . The acoustical resonator of  claim 17  further comprising a substrate having a cavity in a surface thereof, said first electrode bridging said cavity.

Join the waitlist — get patent alerts

Track US2005088257A1 — get alerts on status changes and closely related new filings.

We store only your email — no account needed. See our privacy policy.