Thin-film magnetic memory device executing data writing with data write magnetic fields in two directions

Abstract

A tunneling magneto-resistance element forming an MTJ memory cell has an elongated form having an aspect ratio larger than one for stabilizing the magnetization characteristics. Bit lines and write word lines for carrying data write currents are arranged along short and long sides of the tunneling magneto-resistance element, respectively. The data write current flowing through the bit line, which can easily have an interconnection width, is designed to be larger than the data write current flowing through the write word line. For example, a distance between the write word line and the tunneling magneto-resistance element is smaller than a distance between the bit line and the tunneling magneto-resistance element.

1 - 11 . (canceled)  
   
   
       12 . A thin-film magnetic memory device comprising: 
 a plurality of memory cells each having a magnetic memory portion having an electric resistance varying in accordance with a magnetization direction rewritable in response to application of a predetermined data write magnetic field caused by first and second data write currents;    a first data write interconnection arranged in a first direction for passing said first data write current; and    a second data write interconnection arranged in a second direction for passing said second data write current, wherein said first data write interconnection has a sectional area larger than a sectional area of said second data write interconnection.    
   
   
       13 . A thin-film magnetic memory device comprising: 
 a plurality of memory cells each having a magnetic memory portion having an electric resistance varying in accordance with a magnetization direction rewritable in response to application of a predetermined data write magnetic field caused by first and second data write currents;    a first data write interconnection arranged in a first direction for passing said first data write current; and    a second data write interconnection arranged in a second direction for passing said second data write current, wherein    said first and second data write interconnections are arranged such that a distance between said first data write interconnection and said magnetic memory portion is greater than a distance between said second data write interconnection and said magnetic memory portion.