Methods of treating non-sputtered regions of PVD target constructions to form particle traps

Abstract

The invention includes PVD targets having non-sputtered regions (such as, for example, sidewalls), and particle-trapping features formed along the non-sputtered regions. In particular aspects, the particle-trapping features can comprise a pattern of bent projections forming receptacles, and can comprise microstructures on the bent projections. The targets can be part of target/backing plate constructions, or can be monolithic. The invention also includes methods of forming particle-trapping features along sidewalls of a sputtering target or along sidewalls of a target/backing plate construction. The features can be formed by initially forming a pattern of projections along a sidewall. The projections can be bent and subsequently exposed to particles to form microstructures on the bent projections.

1 . A method of treating a non-sputtered region of a PVD target, comprising: 
 forming a pattern of projections along the non-sputtered region;    bending the projections; and    exposing the projections to a pressurized stream of particles to form microstructures on the projections.    
   
   
       2 . The method of  claim 1  wherein the target is a monolithic target.  
   
   
       3 . The method of  claim 1  further comprising bonding the target to a backing plate to incorporate the target into a target/backing plate construction.  
   
   
       4 . The method of  claim 3  wherein the bonding the target to the backing plate occurs prior to forming the pattern of projections along the non-sputtered region.  
   
   
       5 . The method of  claim 4  wherein the target has a sidewall; wherein the non-sputtered region comprises at least a portion of the sidewall of the target; wherein the backing plate has a sidewall, and further comprising forming the pattern of projections to extend along at least a portion of the sidewall of the backing plate and at least along a portion of the sidewall of the target.  
   
   
       6 . The method of  claim 1  wherein the projections are bent prior to exposing the projections to the particles.  
   
   
       7 . The method of  claim 1  wherein the projections are bent after exposing the projections to the particles.  
   
   
       8 . The method of  claim 1  wherein the pattern of projections is formed as a scroll pattern by utilizing a CNC tool to cut into the non-sputtered region of the target.  
   
   
       9 . The method of  claim 1  wherein the particles comprise one or both of solid H 2 O and solid CO 2 .  
   
   
       10 . The method of  claim 1  wherein the particles comprise one or both of silicon carbide and aluminum oxide; and wherein the exposure of the non-sputtered region to the pressurized stream comprises utilization of a pressure of less than 20 psi within the stream during the exposure.  
   
   
       11 . The method of  claim 1  wherein the particles comprise one or both of silicon carbide and aluminum oxide; and further comprising brushing the non-sputtered region after the exposure to the particles.  
   
   
       12 . The method of  claim 1  wherein the particles comprise one or both of silicon carbide and aluminum oxide; and further comprising exposing the non-sputtered region to a stream of cleaning agent after the exposure to the particles.  
   
   
       13 . The method of  claim 12  wherein the cleaning agent comprises one or both of solid H 2 O and solid CO 2 .  
   
   
       14 . The method of  claim 1  wherein the bent projections have bases, wherein the non-sputtered region of the target has a surface extending between the bases of the bent projections, and wherein the bent projections have a maximum height above the surface of from about 0.0001 inches to about 0.01 inches.  
   
   
       15 . The method of  claim 1  wherein a periodic repeat of the bent projections across the non-sputtered region occurs in a distance of from about 0.0001 inches to about 1 inch.  
   
   
       16 - 35 . (canceled).