Cleaning method and cleaning device

Abstract

A method for cleaning a process chamber of a plasma treatment device includes introducing gas that has been activated with a remote plasma source into a process chamber, reactivating the activated gas in the process chamber, reacting the reactivated gas with a deposit inside the process chamber and exhausting the reacted gas.

1 . A method for cleaning a process chamber of a plasma treatment device, comprising: 
 introducing gas that has been activated with a remote plasma source into a process chamber;    reactivating the activated gas in the process chamber;    reacting the reactivated gas with a deposit inside the process chamber; and    exhausting the reacted gas.    
     
     
         2 . A method for cleaning a process chamber of a plasma treatment device, comprising: 
 activating gas supplied to a process chamber with a first plasma source;    reactivating the activated gas with a second plasma source in the process chamber;    reacting the reactivated gas with a deposit inside the process chamber; and    exhausting a reacted product.    
     
     
         3 . The method for cleaning a process chamber of a plasma treatment device according to  claim 2 , further comprising detoxifying the exhausted reacted product to be harmless.  
     
     
         4 . The method for cleaning a process chamber of a plasma treatment device according to  claim 2 , further comprising: 
 leading out the activated gas from the first plasma source through a plurality of pipes; and    further activating the activated gas with a plurality of third plasma sources so as to proceed to the step of reactivating with the second plasma source.    
     
     
         5 . A cleaning device for a process chamber of a plasma treatment device, comprising: 
 a first plasma source activating gas supplied to a process chamber;    a second plasma source reactivating the activated gas in the process chamber; and    an exhausting device that exhausts a reacted product produced by reacting the gas reactivated by the second plasma source with a deposit inside the process chamber.    
     
     
         6 . The cleaning device for a process chamber of a plasma treatment device according to  claim 5 , further comprising a detoxification device to turn out the exhausted reacted product to be harmless.  
     
     
         7 . The cleaning device for a process chamber of a plasma treatment device according to  claim 5 , further comprising a third plasma source leading out the activated gas from the first plasma source through a plurality of pipes, the activated gas being further activated in each pipe so as to be supplied to the second plasma source, wherein the third plasma source is provided between the first plasma source and the second plasma source.  
     
     
         8 . The method for cleaning a process chamber of a plasma treatment device according to  claim 1 , further comprising keeping the process chamber in a vacuum condition.  
     
     
         9 . The method for cleaning a process chamber of a plasma treatment device according to  claim 1 , further comprising providing a lower electrode inside the process chamber.  
     
     
         10 . The method for cleaning a process chamber of a plasma treatment device according to  claim 1 , further comprising providing an upper electrode inside the process chamber.  
     
     
         11 . The method for cleaning a process chamber of a plasma treatment device according to  claim 10 , further comprising applying a radio frequency to the upper electrode.  
     
     
         12 . The method for cleaning a process chamber of a plasma treatment device according to  claim 1 , further comprising a placing a substrate in the process chamber.  
     
     
         13 . The method for cleaning a process chamber of a plasma treatment device according to  claim 2 , further comprising keeping the process chamber in a vacuum condition.  
     
     
         14 . The method for cleaning a process chamber of a plasma treatment device according to  claim 2 , further comprising providing a lower electrode inside the process chamber.  
     
     
         15 . The method for cleaning a process chamber of a plasma treatment device according to  claim 2 , further comprising providing an upper electrode inside the process chamber.  
     
     
         16 . The method for cleaning a process chamber of a plasma treatment device according to  claim 15 , further comprising applying a radio frequency to the upper electrode.  
     
     
         17 . The method for cleaning a process chamber of a plasma treatment device according to  claim 2 , further comprising a placing a substrate in the process chamber.  
     
     
         18 . The cleaning device for a process chamber of a plasma treatment device according to  claim 5 , wherein the process chamber is kept in a vacuum condition.  
     
     
         19 . The cleaning device for a process chamber of a plasma treatment device according to  claim 5 , further comprising a lower electrode inside the process chamber.  
     
     
         20 . The cleaning device for a process chamber of a plasma treatment device according to  claim 5 , further comprising an upper electrode inside the process chamber.