US2005078256A1PendingUtilityA1
In plane switching mode liquid crystal display device and fabrication method thereof
Est. expiryOct 9, 2023(expired)· nominal 20-yr term from priority
Inventors:Hyung-Ki Hong
G02F 1/1343G02F 1/136227G02F 1/136222G02F 1/134363
43
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Claims
Abstract
An IPS mode LCD includes first and second substrates. A thin film transistor and a color filter layer are formed on the first substrate. A common electrode and a pixel electrode are arranged in a zigzag configuration on the first substrate. A liquid crystal layer is disposed between the first and second substrates.
Claims
exact text as granted — not AI-modified1 . An in-plane switching (IPS) mode liquid crystal display (LCD) comprising:
a first substrate and a second substrate; a thin film transistor and a color filter layer disposed on the first substrate; a common electrode and a pixel electrode arranged in a zigzag configuration on the first substrate; and a liquid crystal layer between the first and second substrates.
2 . The IPS mode LCD of claim 1 , wherein the color filter layer is closer to the first substrate than the thin film transistor is to the first substrate.
3 . The IPS mode LCD of claim 2 , further comprising an overcoat layer disposed on the color filter layer.
4 . The IPS mode LCD of claim 1 , wherein the color filter layer is closer to the liquid crystal layer than the thin film transistor is to the liquid crystal layer.
5 . The IPS mode LCD of claim 4 , further comprising an overcoat layer disposed on the color filter layer.
6 . The IPS mode LCD of claim 1 , further comprising:
a gate line and a data line crossing with each other on the first substrate and defining a pixel region; and a black matrix layer on the thin film transistor, the gate line and the data line.
7 . The IPS mode LCD of claim 6 , wherein the thin film transistor is disposed at a crossing portion of the gate and data lines.
8 . The IPS mode LCD of claim 6 , wherein the black matrix layer is formed of black resin.
9 . The IPS mode LCD of claim 1 , further comprising a black matrix layer disposed on the first substrate.
10 . The IPS mode LCD of claim 9 , wherein the black matrix layer and color filter layer are laterally adjacent to each other.
11 . The IPS mode LCD of claim 9 , wherein the black matrix layer is closer to the liquid crystal layer than the color filter layer is to the liquid crystal layer.
12 . The IPS mode LCD of claim 11 , wherein the thin film transistor is closer to the liquid crystal layer than the color filter layer is to the liquid crystal layer.
13 . The IPS mode LCD of claim 12 , further comprising an overcoat layer that covers the black matrix layer.
14 . The IPS mode LCD of claim 13 , wherein the overcoat layer is disposed in a pixel region laterally adjacent to the black matrix layer.
15 . The IPS mode LCD of claim 13 , wherein the common and pixel electrodes are disposed on the overcoat layer.
16 . The IPS mode LCD of claim 10 , further comprising an overcoat layer that covers the black matrix layer and color filter layer.
17 . The IPS mode LCD of claim 16 , wherein the common and pixel electrodes are disposed on the overcoat layer.
18 . The IPS mode LCD of claim 1 , wherein the common and pixel electrodes are disposed on the color filter layer.
19 . The IPS mode LCD of claim 1 , wherein the common and pixel electrodes are disposed closer to the liquid crystal layer than the thin film transistor is to the liquid crystal layer.
20 . The IPS mode LCD of claim 1 , further comprising alignment films disposed on the first and second substrates.
21 . The IPS mode LCD of claim 1 , wherein the zigzag configuration has a bend angle less than 300 with respect to an alignment direction of the liquid crystal layer.
22 . The IPS mode LCD of claim 1 , wherein the zigzag configuration has a bend angle range of 60-120°, except 90°, with respect to an alignment direction of the liquid crystal layer.
23 . The IPS mode LCD of claim 1 , wherein the common and pixel electrodes are formed of a transparent conductive material.
24 . The IPS mode LCD of claim 1 , wherein the common and pixel electrodes have a plurality of bends.
25 . A method of fabricating an IPS mode LCD, the method comprising:
forming a color filter layer and a thin film transistor on a first substrate; forming a common electrode and a pixel electrode in a zigzag configuration after forming the thin film transistor; and providing a liquid crystal layer between the first substrate and a second substrate facing the first substrate.
26 . The method of claim 25 , wherein the color filter layer is closer to the first substrate than the thin film transistor is to the first substrate.
27 . The method of claim 25 , wherein the color filter layer is closer to the liquid crystal layer than the thin film transistor is to the liquid crystal layer.
28 . The method of claim 25 , further comprising forming a black matrix layer on the thin film transistor.
29 . The method of claim 25 , further comprising forming a black matrix layer on the first substrate.
30 . The method of claim 25 , wherein the zigzag configuration has a bend angle less than 30° with respect to an alignment direction of the liquid crystal layer.
31 . The method of claim 25 , wherein the zigzag configuration has a bend angle range of 60-120°, except 90°, with respect to an alignment direction of the liquid crystal layer.
32 . An in-plane switching (IPS) mode liquid crystal display (LCD) comprising:
a first substrate and a second substrate; a thin film transistor and a color filter layer disposed on the first substrate; a liquid crystal layer between the first and second substrates; and a common electrode and a pixel electrode arranged on the first substrate in a configuration that produces multiple domains in the liquid crystal layer when liquid crystal molecules in the liquid crystal layer are aligned.
33 . The IPS mode LCD of claim 32 , wherein the common and pixel electrodes are arranged such that when the liquid crystal molecules are aligned, the liquid crystal molecules are symmetric.
34 . The IPS mode LCD of claim 32 , wherein the common and pixel electrodes are non-linear.
35 . The IPS mode LCD of claim 32 , further comprising a black matrix layer disposed on the first substrate and laterally adjacent to the color filter layer.
36 . The IPS mode LCD of claim 32 , further comprising a black matrix layer disposed on the first substrate and closer to the liquid crystal layer than the color filter layer is to the liquid crystal layer.
37 . The IPS mode LCD of claim 32 , wherein the thin film transistor is closer to the liquid crystal layer than the color filter layer is to the liquid crystal layer.
38 . The IPS mode LCD of claim 32 , further comprising:
a black matrix layer disposed on the first substrate; and an overcoat layer that covers the black matrix layer.
39 . The IPS mode LCD of claim 38 , wherein the overcoat layer is disposed in a pixel region laterally adjacent to the black matrix layer.
40 . The IPS mode LCD of claim 32 , wherein the common and pixel electrodes have a plurality of bends.Join the waitlist — get patent alerts
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