US2005074971A1PendingUtilityA1

Semiconductor device and method for fabricating the same

Assignee: FUJITSU LTDPriority: Feb 27, 2002Filed: Feb 17, 2004Published: Apr 7, 2005
Est. expiryFeb 27, 2022(expired)· nominal 20-yr term from priority
H10W 72/5522H10W 90/724H10W 90/722H10W 90/22H10W 72/9415H10W 72/90H10W 72/01H10W 72/073H10W 72/851H10W 70/093H10W 72/072H10W 72/01212H10W 90/732H10W 90/00H10W 70/60
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Claims

Abstract

A group of wires that bonds the first semiconductor chip and the second semiconductor chip together and extends on the first semiconductor chip is formed of a single plated film through plating in one continuous process. The second semiconductor chip is then bonded onto the first semiconductor chip to complete a semiconductor package.

Claims

exact text as granted — not AI-modified
1 . A semiconductor device comprising: 
 a first semiconductor chip,    a second semiconductor chip bonded onto the first semiconductor chip, and    a single electrically conductive film, extending on an element-formed surface of the first semiconductor chip, electrically connecting between the first semiconductor chip and the second semiconductor chip.    
   
   
       2 . The semiconductor device according to  claim 1 , wherein the conductive film is a plated film.  
   
   
       3 . The semiconductor device according to  claim 1 , wherein the conductive film also serves as a lead wire of the first semiconductor chip.  
   
   
       4 . The semiconductor device according to  claim 1 , wherein an adhesive resin that has been used for temporarily fixing both the semiconductor chips remains on a surface of the second semiconductor chip opposite to the first semiconductor chip.

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