Deep via seed repair using electroless plating chemistry

Abstract

Methods of forming a continuous seed layer in a high aspect via and its associated structures are described. Those methods comprise forming a recess in a substrate, forming a non-continuous metal layer within the recess, activating the non-continuous metal layer and a plurality of non-deposited regions within the recess, electrolessly depositing a seed layer on the activated non-continuous metal layer and the plurality of non-deposited regions within the recess, and electroplating a metal fill layer over the seed layer, to form a substantially void-free metal filled recess.

1 . A method of forming a seed layer comprising: 
 forming a non-continuous metal layer within a recess in a substrate;    activating the non-continuous metal layer and at least one of a non-deposited region within the recess; and    electrolessly depositing a seed layer on the non-continuous metal layer and on the at least one non-deposited region within the recess.    
     
     
         2 . The method of  claim 1  wherein forming the recess comprises forming a high aspect recess comprising an aspect ratio greater than about 3:1.  
     
     
         3 . The method of  claim 1  wherein forming the non-continuous metal layer comprises forming a non-continuous layer of at least one of tantalum, tantalum nitride, tantalum silicon nitride, tungsten, titanium, titanium tungsten, titanium nitride, titanium silicon nitride or a combination thereof.  
     
     
         4 . The method of  claim 1  wherein activating the non-continuous metal layer and the at least one non-deposited region within the recess comprises forming an activation layer on the non-continuous metal layer and on the at least one non-deposited region within the recess.  
     
     
         5 . The method of  claim 4  wherein activating the non-continuous metal layer and the at least one non-deposited region within the recess comprises forming at least one of a palladium or platinum layer on the non-continuous metal layer and the at least one non-deposited region within the recess.  
     
     
         6 . The method of  claim 1  further comprising forming a metal fill layer on the seed layer.  
     
     
         7 . The method of  claim 6  further comprising polishing the metal fill layer by utilizing a chemical mechanical polishing process.  
     
     
         8 . The method of  claim 6  wherein forming the metal fill layer comprises forming a substantially void free metal fill layer.  
     
     
         9 . A method of forming a microelectronic structure comprising: 
 forming a recess in a substrate;    forming a non-continuous metal layer within the recess;    activating the non-continuous metal layer and at least one non-deposited region within the recess;    electrolessly depositing a seed layer on the non-continuous metal layer and on the at least one non-deposited region within the recess; and    forming a metal fill layer over the seed layer.    
     
     
         10 . The method of  claim 9  wherein forming the recess comprises forming a high aspect recess comprising an aspect ratio greater than about 3:1.  
     
     
         11 . The method of  claim 9  wherein forming the non-continuous metal layer comprises forming a non-continuous layer of at least one of tantalum, tantalum nitride, tantalum silicon nitride, tungsten, titanium, titanium tungsten, titanium nitride, titanium silicon nitride or a combination thereof.  
     
     
         12 . The method of  claim 9  wherein electrolessly depositing the seed layer comprises electrolessly depositing a copper layer comprising a grain size of about 1 micron in diameter or greater.  
     
     
         13 . The method of  claim 9  wherein forming the metal fill layer comprises electroplating a metal fill layer.  
     
     
         14 . The method of  claim 9  wherein forming the metal fill layer comprises forming a substantially void free metal fill layer.  
     
     
         15 . The method of  claim 9  wherein forming the metal fill layer comprises electroplating a copper layer.  
     
     
         16 . A microelectronic structure, comprising: 
 a recess in a substrate;    a non-continuous metal layer disposed within the recess;    a seed layer disposed on the non-continuous metal layer and on at least one non-deposited region within the recess; and    a metal fill layer disposed on the seed layer.    
     
     
         17 . The structure of  claim 16  wherein the seed layer comprises a grain size of about 1 micron in diameter or greater.  
     
     
         18 . The structure of  claim 16  wherein the non-continuous metal layer comprises at least one of titanium, tantalum, tantalum nitride, tantalum silicon nitride, tungsten, titanium, titanium tungsten, titanium nitride, titanium silicon nitride or a combination thereof.  
     
     
         19 . The structure of  claim 16  wherein the seed layer comprises copper.  
     
     
         20 . The structure of  claim 16  wherein the recess comprises a high aspect ratio recess, wherein the high aspect ratio comprises an aspect ratio greater than about 3:1.  
     
     
         21 . The structure of  claim 16  wherein the metal fill layer comprises a substantially void free metal fill layer.