CVD of PtRh with good adhesion and morphology

Abstract

A method and system for performing metal-organic chemical vapor deposition (MOCVD). The method introduces a metal-organic compound into the CVD chamber in the presence of a first reactant selected to have a reducing chemistry and then, subsequently, a second reactant selected to have an oxidizing chemistry. The reducing chemistry results in deposition of metal species having a reduced surface mobility creating more uniform coverage and better adhesion. The oxidizing species results in deposition of metal species having a greater surface mobility leading to greater surface agglomeration and faster growth. By alternating the two reacts, faster growth is achieved and uniformity of the metal structure is enhanced.

1 . A system for forming a conductive element on a semiconductor device, the system comprising: 
 a CVD chamber that receives the semiconductor device;    a conductive precursor gas supply system that provides a conductive precursor gas to the CVD chamber wherein the conductive precursor gas has both conductive components that when deposited on the semiconductor device form the conductive element and organic components which facilitate step coverage of the conductive element over the semiconductor device; and    a reactant gas supply system that provides both a first reactant and a second reactant into the chamber so that conductive precursor gas is deposited using both a first chemistry and a second chemistry such that the first chemistry provides more uniform step coverage and the second chemistry provides increased vertical growth of conductive element and the semiconductor substrate.    
   
   
       2 . The system of  claim 1 , wherein the conductive precursor gas supply system provides a metal-organic gas to the CVD chamber.  
   
   
       3 . The system of  claim 2 , wherein the conductive precursor gas supply system provides a combination of Methylcyclopentadienyl Trimethyl Platinum gas and a Dicarbonyl Cyclopentadienyl Rhodium gas.  
   
   
       4 . The system of  claim 2 , wherein the reactant gas supply system provides a first reactant that is comprised of a reducing gas and a second reactant that is comprised of a oxidizing gas.  
   
   
       5 . The system of  claim 4 , wherein the reactant gas supply provides a hydrogen-based reducing gas and an oxygen-based oxidizing gas.