Mask, method of manufacturing a mask, method of manufacturing an organic electroluminescence device, and organic electroluminiescence device

Abstract

A mask is disclosed for use in forming a thin-layer pattern of an organic electroluminescence element having high-precision pixels. The mask is manufactured by wet-etching a (100) silicon wafer (single crystal silicon substrate) 1 in a crystal orientation-dependent anisotropic fashion so as to form through-holes 11 having (111)-oriented walls 11 a serving as apertures corresponding to a thin-layer pattern to be formed.

1 . A mask for use in manufacturing a thin layer having a predetermined pattern on a substrate surface, the mask being formed of a single crystal silicon and comprising: 
 a through-hole serving as the aperture; and    a raised portion formed in the peripheral area on the mask so as to serve as the mask holder.    
   
   
       2 . The mask according to  claim 1 , the through-hole serving as the aperture formed by anisotropic wet etching using a crystal orientation dependence.  
   
   
       3 . The mask according to  claim 1 , the mask being formed of single crystal silicon so as to have a mask surface formed by a (100) surface of the single crystal silicon and a through-hole with (111)-oriented walls.  
   
   
       4 . The mask according to  claim 1 , the through-hole being tapered in opposite directions and the raised portion being located on the same side where the through-hole has a smaller aperture size than on the opposite side.  
   
   
       5 . A method of manufacturing an organic electroluminescence device, comprising: 
 forming a thin-layer pattern serving as a layer of the organic electroluminescence element by performing vacuum evaporation using the mask according to  claim 1.