Integrated optics and electronics

Abstract

An optoelectronic device includes a submount and a lid. The submount includes a substrate and a lens and a laser above the substrate. The lid defines a cavity having a surface coated with a reflective material to form a 45 degree mirror. The mirror reflects a light from the laser to the lens and the light exits the optoelectronic device through the submount.

1 . A laser submount, comprising: 
 a substrate;    a lens above the substrate; and    a laser above the substrate.    
     
     
         2 . The laser submount of  claim 1 , wherein the substrate is selected from the group consisting of silicon, quartz, sodium borosilicate glass, sapphire, gallium arsenide, silicon carbide, and gallium phosphide.  
     
     
         3 . The laser submount of  claim 1 , further comprising: 
 a planarization layer covering the lens; and    an interconnect layer above the planarization layer.    
     
     
         4 . The laser submount of  claim 3 , wherein the planarization layer is an oxide layer.  
     
     
         5 . The laser submount of  claim 3 , further comprising: 
 a dielectric layer above the interconnect layer; and    a contact pad above the dielectric layer, wherein the laser is electrically connected to the contact pad.    
     
     
         6 . The laser submount of  claim 5 , further comprising: 
 a sealing ring above the dielectric layer and surrounding the contact pad and the laser.    
     
     
         7 . The laser submount of  claim 1 , further comprising: 
 at least one of a passive integrated circuit and an active integrated circuit.    
     
     
         8 . A method for forming a laser submount, comprising: 
 forming a lens above a substrate; and    mounting a laser to the laser submount above the substrate.    
     
     
         9 . The method of  claim 8 , wherein the substrate is selected from the group consisting of silicon, quartz, sodium borosilicate glass, sapphire, gallium arsenide, silicon carbide, and gallium phosphide.  
     
     
         10 . The method of  claim 8 , further comprising, subsequent to said forming a lens and prior to said mounting a laser: 
 forming a planarization layer covering the lens; and    forming an interconnect layer above the planarization layer.    
     
     
         11 . The method of  claim 10 , wherein the planarization layer is an oxide layer.  
     
     
         12 . The method of  claim 10 , further comprising, subsequent to said forming an interconnect layer and prior to said mounting a laser: 
 forming a dielectric layer covering the interconnect layer; and    forming a contact pad above the dielectric layer, wherein the laser is electrically connected to the contact pad.    
     
     
         13 . The method of  claim 12 , further comprising, subsequent to said forming a dielectric and prior to said mounting a laser: 
 forming a sealing ring above the dielectric layer and surrounding the contact pad and the laser.    
     
     
         14 . The method of  claim 8 , further comprising: 
 forming at least one of a passive integrated circuit and an active integrate circuit above the substrate.