Plasma processing apparatus and system, performance validation system and inspection method therefor

Abstract

A plasma processing apparatus including a plasma processing chamber having a plasma excitation electrode for exciting a plasma, a radiofrequency generator for supplying a radiofrequency voltage to the electrode, a radiofrequency feeder connected to the electrode, and a matching circuit having an input terminal and an output end. The input terminal is connected to the radiofrequency generator and the output end is connected to an end of the radiofrequency feeder so as to achieve impedance matching between the plasma processing chamber and the radiofrequency generator. A frequency which is three times a first series resonant frequency f 0 of the plasma processing chamber, which is measured at the end of the radiofrequency feeder, is larger than a power frequency f e of the radiofrequency waves.

1 - 12  (Cancelled)  
   
   
       13 . A plasma processing apparatus comprising a plurality of plasma processing chamber units, 
 each plasma processing chamber unit comprising: 
 a plasma processing chamber having a plasma excitation electrode for exciting a plasma;  
 a radiofrequency generator for supplying a radiofrequency voltage to the plasma excitation electrode;  
 a radiofrequency feeder connected to the plasma excitation electrode; and  
 a matching circuit having an input terminal and an output terminal, wherein the input terminal is connected to the radiofrequency generator and the output terminal is connected to the radiofrequency feeder so as to achieve impedance matching between the plasma processing chamber and the radiofrequency generator,  
   wherein a variation, defined by (A max −A min )/(A max +A min ), between the maximum frequency A max  and the minimum frequency A min  among radiofrequency characteristics A of the plurality of plasma processing chambers has a predetermined value, wherein, in each plasma processing chamber unit, the radiofrequency characteristic A thereof is measured at a measuring point which is at the end of the corresponding radiofrequency feeder connected to the output terminal of the corresponding matching circuit.    
   
   
       14 . A plasma processing apparatus comprising a plurality of plasma processing chamber units, 
 each plasma processing chamber unit comprising: 
 a plasma processing chamber having a plasma excitation electrode for exciting a plasma;  
 a radiofrequency generator for supplying a radiofrequency voltage to the plasma excitation electrode;  
 a radiofrequency feeder connected to the plasma excitation electrode; and  
 a matching circuit having an input terminal and an output terminal, wherein the input terminal is connected to the radiofrequency generator via a radiofrequency feed line, whereas the output terminal is connected to the radiofrequency feeder so as to achieve impedance matching between the plasma processing chamber and the radiofrequency generator,  
   wherein a variation, defined by (A max −A min )/(A max +A min ), between the maximum frequency A max  and the minimum frequency A min  among radiofrequency characteristics A of the plurality of plasma processing chambers has a predetermined value, wherein, in each plasma processing chamber unit, the radiofrequency characteristic A thereof is measured at a measuring point which is the radiofrequency-generator-side end of the radiofrequency feed line connected to the respective radiofrequency generator.    
   
   
       15 . A plasma processing apparatus comprising a plurality of plasma processing chamber units, 
 each plasma processing chamber unit comprising: 
 a plasma processing chamber having a plasma excitation electrode for exciting a plasma;  
 a radiofrequency generator for supplying a radiofrequency voltage to the plasma excitation electrode;  
 a radiofrequency feeder connected to the plasma excitation electrode; and  
 a matching circuit having an input terminal and an output terminal, wherein the input terminal is connected to the radiofrequency generator via a radiofrequency feed line, whereas the output terminal is connected to the radiofrequency feeder so as to achieve impedance matching between the plasma processing chamber and the radiofrequency generator,  
   wherein a variation, defined by (A max -A min )/(A max +A min ), between the maximum frequency A max  and the minimum frequency A min  among radiofrequency characteristics A of the plurality of plasma processing chambers has a predetermined value, wherein, in each plasma processing chamber unit, the radiofrequency characteristic A thereof is measured at a measuring point which is the input terminal connected to the corresponding radiofrequency feed line.    
   
   
       16 . A plasma processing apparatus according to  claim 13 , wherein the predetermined value is less than 0.1.  
   
   
       17 . A plasma processing apparatus according to  claim 14 , wherein the predetermined value is less than 0.1.  
   
   
       18 . A plasma processing apparatus according to  claim 15 , wherein the predetermined value is less than 0.1.  
   
   
       19 . A plasma processing apparatus according to  claim 13 , wherein each radiofrequency characteristic A is any one of a resonant frequency f, an impedance Z e  at the frequency of the radiofrequency generator, a resistance R e  at the frequency of the radiofrequency generator, and a reactance X e  at the frequency of the radiofrequency generator.  
   
   
       20 . A plasma processing apparatus according to  claim 14 , wherein each radiofrequency characteristic A is any one of a resonant frequency f, an impedance Z e  at the frequency of the radiofrequency generator, a resistance R e  at the frequency of the radiofrequency generator, and a reactance X e  at the frequency of the radiofrequency generator.  
   
   
       21 . A plasma processing apparatus according to  claim 15 , wherein each radiofrequency characteristic A is any one of a resonant frequency f, an impedance Z e  at the frequency of the radiofrequency generator, a resistance R e  at the frequency of the radiofrequency generator, and a reactance X e  at the frequency of the radiofrequency generator.  
   
   
       22 . A plasma processing apparatus according to  claim 13 , wherein each radiofrequency characteristic A is a first series resonant frequency f 0 .  
   
   
       23 . A plasma processing apparatus according to  claim 14 , wherein each radiofrequency characteristic A is a first series resonant frequency f 0 .  
   
   
       24 . A plasma processing apparatus according to  claim 15 , wherein each radiofrequency characteristic A is a first series resonant frequency f 0 .  
   
   
       25 . A plasma processing apparatus according to  claim 13 , wherein three times the first series resonant frequency f 0  corresponding to each plasma processing chamber is larger than the frequency f e  of the radiofrequency waves.  
   
   
       26 . A plasma processing apparatus according to  claim 13 , wherein each plasma processing chamber has a measuring terminal for measuring the radiofrequency characteristic A thereof at the corresponding measuring point.  
   
   
       27 . A plasma processing apparatus according to  claim 14 , wherein each plasma processing chamber has a measuring terminal for measuring the radiofrequency characteristic A thereof at the corresponding measuring point.  
   
   
       28 . A plasma processing apparatus according to  claim 15 , wherein each plasma processing chamber has a measuring terminal for measuring the radiofrequency characteristic A thereof at the corresponding measuring point.  
   
   
       29 . A plasma processing apparatus according to  claim 26 , wherein each plasma processing chamber has a switch in the vicinity of the corresponding measuring point in which the switch electrically disconnects the measuring point from the measuring terminal and connects the radiofrequency feeder to the radiofrequency generator in a plasma excitation mode in which the plasma is excited, whereas the switch electrically connects the measuring point to the measuring terminal and disconnects the radiofrequency generator from the measuring point in a measuring mode in which the radiofrequency characteristic A of the corresponding plasma processing chamber is measured.  
   
   
       30 . A plasma processing apparatus according to  claim 27 , wherein each plasma processing chamber has a switch in the vicinity of the corresponding measuring point in which the switch electrically disconnects the measuring point from the measuring terminal and connects the radiofrequency feeder to the radiofrequency generator in a plasma excitation mode in which the plasma is excited, whereas the switch electrically connects the measuring point to the measuring terminal and disconnects the radiofrequency generator from the measuring point in a measuring mode in which the radiofrequency characteristic A of the corresponding plasma processing chamber is measured.  
   
   
       31 . A plasma processing apparatus according to  claim 28 , wherein each plasma processing chamber has a switch in the vicinity of the corresponding measuring point in which the switch electrically disconnects the measuring point from the measuring terminal and connects the radiofrequency feeder to the radiofrequency generator in a plasma excitation mode in which the plasma is excited, whereas the switch electrically connects the measuring point to the measuring terminal and disconnects the radiofrequency generator from the measuring point in a measuring mode in which the radiofrequency characteristic A of the corresponding plasma processing chamber is measured.  
   
   
       32 . A plasma processing system comprising a plurality of plasma processing apparatuses, 
 each plasma processing apparatus comprising: 
 a plasma processing chamber having a plasma excitation electrode for exciting a plasma;  
 a radiofrequency generator for supplying a radiofrequency voltage to the plasma excitation electrode;  
 a radiofrequency feeder connected to the plasma excitation electrode; and  
 a matching circuit having an input terminal and an output terminal, wherein the input terminal is connected to the radiofrequency generator and the output terminal is connected to the radiofrequency feeder so as to achieve impedance matching between the plasma processing chamber and the radiofrequency generator,  
   wherein a variation, defined by (A max −A min )/(A max +A min ), between the maximum frequency A max  and the minimum frequency A min  among radiofrequency characteristics A of the plurality of plasma processing chambers has a predetermined value, wherein, in each plasma processing chamber, the radiofrequency characteristic A thereof is measured at a measuring point which is at the end of the corresponding radiofrequency feeder connected to the output terminal of the corresponding matching circuit.    
   
   
       33 . A plasma processing system comprising a plurality of plasma processing apparatuses, 
 each plasma processing apparatus comprising: 
 a plasma processing chamber having a plasma excitation electrode for exciting a plasma;  
 a radiofrequency generator for supplying a radiofrequency voltage to the plasma excitation electrode;  
 a radiofrequency feeder connected to the plasma excitation electrode; and  
 a matching circuit having an input terminal and an output terminal, wherein the input terminal is connected to the radiofrequency generator via a radiofrequency feed line, whereas the output terminal is connected to the radiofrequency feeder so as to achieve impedance matching between the plasma processing chamber and the radiofrequency generator,  
   wherein a variation, defined by (A max −A min )/(A max +A min ), between the maximum frequency A max  and the minimum frequency A min  among radiofrequency characteristics A of the plurality of plasma processing chambers has a predetermined value, wherein, in each plasma processing chamber, the radiofrequency characteristic A thereof is measured at a measuring point which is the radiofrequency-generator-side end of the radiofrequency feed line connected to the respective radiofrequency generator.    
   
   
       34 . A plasma processing system comprising a plurality of plasma processing apparatuses, 
 each plasma processing apparatus comprising: 
 a plasma processing chamber having a plasma excitation electrode for exciting a plasma;  
 a radiofrequency generator for supplying a radiofrequency voltage to the plasma excitation electrode;  
 a radiofrequency feeder connected to the plasma excitation electrode; and  
 a matching circuit having an input terminal and an output terminal, wherein the input terminal is connected to the radiofrequency generator via a radiofrequency feed line, whereas the output terminal is connected to the radiofrequency feeder so as to achieve impedance matching between the plasma processing chamber and the radiofrequency generator,  
   wherein a variation, defined by (A max −A min )/(A max +A min ), between the maximum frequency A max  and the minimum frequency A min  among radiofrequency characteristics A of the plurality of plasma processing chambers has a predetermined value, wherein, in each plasma processing chamber, the radiofrequency characteristic A thereof is measured at a measuring point which is the input terminal connected to the corresponding radiofrequency feed line.    
   
   
       35 . A plasma processing system according to  claim 32 , wherein the predetermined value is less than 0.1.  
   
   
       36 . A plasma processing system according to  claim 33 , wherein the predetermined value is less than 0.1.  
   
   
       37 . A plasma processing system according to  claim 34 , wherein the predetermined value is less than 0.1.  
   
   
       38 . A plasma processing system according to  claim 32 , wherein each radiofrequency characteristic A is any one of a resonant frequency f, an impedance Z e  at the frequency of the radiofrequency generator, a resistance R e  at the frequency of the radiofrequency generator, and a reactance X e  at the frequency of the radiofrequency generator.  
   
   
       39 . A plasma processing system according to  claim 33 , wherein each radiofrequency characteristic A is any one of a resonant frequency f, an impedance Z e  at the frequency of the radiofrequency generator, a resistance R e  at the frequency of the radiofrequency generator, and a reactance X e  at the frequency of the radiofrequency generator.  
   
   
       40 . A plasma processing system according to  claim 34 , wherein each radiofrequency characteristic A is any one of a resonant frequency f, an impedance Z e  at the frequency of the radiofrequency generator, a resistance R e  at the frequency of the radiofrequency generator, and a reactance X e  at the frequency of the radiofrequency generator.  
   
   
       41 . A plasma processing system according to  claim 32 , wherein each radiofrequency characteristic A is a first series resonant frequency f 0 .  
   
   
       42 . A plasma processing system according to  claim 33 , wherein each radiofrequency characteristic A is a first series resonant frequency f 0 .  
   
   
       43 . A plasma processing system according to  claim 34 , wherein each radiofrequency characteristic A is a first series resonant frequency f 0 .  
   
   
       44 . A plasma processing system according to  claim 32 , wherein three times the first series resonant frequency f 0  corresponding to each plasma processing chamber is larger than the frequency f e  of the radiofrequency waves.  
   
   
       45 . A plasma processing system according to  claim 33 , wherein each plasma processing chamber has a measuring terminal for measuring the radiofrequency characteristic A thereof at the corresponding measuring point.  
   
   
       46 . A plasma processing system according to  claim 34 , wherein each plasma processing chamber has a measuring terminal for measuring the radiofrequency characteristic A thereof at the corresponding measuring point.  
   
   
       47 . A plasma processing system according to  claim 35 , wherein each plasma processing chamber has a measuring terminal for measuring the radiofrequency characteristic A thereof at the corresponding measuring point.  
   
   
       48 . A plasma processing apparatus according to  claim 44 , wherein each plasma processing chamber has a switch in the vicinity of the corresponding measuring point in which the switch electrically disconnects the measuring point from the measuring terminal and connects the radiofrequency feeder to the radiofrequency generator in a plasma excitation mode in which the plasma is excited, whereas the switch electrically connects the measuring point to the measuring terminal and disconnects the radiofrequency generator from the measuring point in a measuring mode in which the radiofrequency characteristic A of the corresponding plasma processing chamber is measured.  
   
   
       49 . A plasma processing apparatus according to  claim 45 , wherein each plasma processing chamber has a switch in the vicinity of the corresponding measuring point in which the switch electrically disconnects the measuring point from the measuring terminal and connects the radiofrequency feeder to the radiofrequency generator in a plasma excitation mode in which the plasma is excited, whereas the switch electrically connects the measuring point to the measuring terminal and disconnects the radiofrequency generator from the measuring point in a measuring mode in which the radiofrequency characteristic A of the corresponding plasma processing chamber is measured.  
   
   
       50 . A plasma processing apparatus according to  claim 46 , wherein each plasma processing chamber has a switch in the vicinity of the corresponding measuring point in which the switch electrically disconnects the measuring point from the measuring terminal and connects the radiofrequency feeder to the radiofrequency generator in a plasma excitation mode in which the plasma is excited, whereas the switch electrically connects the measuring point to the measuring terminal and disconnects the radiofrequency generator from the measuring point in a measuring mode in which the radiofrequency characteristic A of the corresponding plasma processing chamber is measured.  
   
   
       51 - 62  (Cancelled)