Method of manufacturing Er-doped silicon nano-dot array and laser ablation apparatus used therein

Abstract

A laser ablation apparatus. A target has a silicon region and an erbium region divided in a chamber with a silicon substrate opposite to the target. A target rotating axis rotates the target to alternately radiate laser light onto the silicon region and the erbium region, a laser generator irradiates laser light for generating a plume by ablating silicon from the silicon region and erbium from the erbium region outside the chamber.

1 . A laser ablation apparatus comprising: 
 a target having a silicon region and an erbium region divided in a chamber;    a silicon substrate opposite to the target;    a target rotating axis for rotating the target to alternately radiate laser light onto the silicon region and the erbium region; and    a laser generator for irradiating laser light for generating a plume by ablating silicon from the silicon region and erbium from the erbium region outside the chamber.    
   
   
       2 . The laser ablation apparatus of  claim 1 , wherein the erbium region is included in the silicon region.  
   
   
       3 . The laser ablation apparatus of  claim 1 , wherein the erbium region is polygonal.  
   
   
       4 . The laser ablation apparatus of  claim 3 , wherein the erbium region is quadrilateral.  
   
   
       5 . The laser ablation apparatus of  claim 4 , wherein the laser light is focused at the corners of the quadrilateral erbium region so that the laser light is alternately irradiated onto the silicon region and the erbium region due to the rotation of the target.  
   
   
       6 . The laser ablation apparatus of  claim 1 , wherein the target is constituted by installing an erbium substrate in the center of a silicon disc.  
   
   
       7 . The laser ablation apparatus of  claim 1 , wherein the laser generator is an Nd:YAG laser for generating laser light of 266 nm.