Thin films and production methods thereof

Abstract

A layered structure generally includes a first layer suitable for having a useful element formed therein or thereon selectively attached or bonded to a second layer. A method to form a layered structure generally comprises selectively adhering a first substrate to a second substrate.

1 - 16 . (Canceled)  
   
   
       17 . A method of making a microdevice or a nanodevice comprising: 
 providing the layered structure of claim  1 ; and    processing at least a portion of the microdevice or nanodevice in or upon the first layer at the region of weak bonding.    
   
   
       18 . The method as in  claim 17 , further comprising debonding the first layer from the second layer, wherein debonding minimally damages the microdevice or nanodevice.  
   
   
       19 . A method of making a layered structure comprising: 
 providing a first layer and a second layer;    treating regions of the first layer, the second layer, or both the first layer and the second layer for weak bonding; and    bonding the first and second layers.    
   
   
       20 . A method of making a layered structure comprising: 
 providing a first layer and a second layer;    treating regions of the first layer, the second layer, or both the first layer and the second layer for strong bonding; and    bonding the first and second layers.    
   
   
       21 . A method of making a layered structure comprising: 
 selectively adhering a first layer to a second layer.    
   
   
       22 . The method as in  claim 21 , wherein the selective adhering comprises treating selected portions of the first layer for weak bonding of the first layer and the layer.  
   
   
       23 . The method as in  claim 21 , wherein the selective adhering comprises treating selected portions of the second layer for weak bonding of the first layer and the second layer.  
   
   
       24 . The method as in  claim 21 , wherein the selective adhering comprises treating selected portions of the first layer and the second layer for weak bonding of the first layer and the second layer.  
   
   
       25 . The method as in  claim 21 , wherein the selective adhering comprises treating selected portions of the first layer for strong bonding of the first layer and the layer.  
   
   
       26 . The method as in  claim 21 , wherein the selective adhering comprises treating selected portions of the second layer for strong bonding of the first layer and the second layer.  
   
   
       27 . The method as in  claim 21 , wherein the selective adhering comprises treating selected portions of the first layer and the second layer for strong bonding of the first layer and the second layer.  
   
   
       28 . The method as in  claim 21 , wherein the selective adhering comprises providing weak bond regions at an interface between the first layer and the second layer having greater surface roughness than strong bond regions at the interface between the first layer and the second layer.  
   
   
       29 . The method as in  claim 21 , wherein the selective adhering comprises providing strong bond regions at an interface between the first layer and the second layer treated with an adhesive material or processing step, and further wherein weak bond regions remain at the interface between the first layer and the second layer that are not treated with an adhesive material or processing step.  
   
   
       30 . The method as in  claim 21 , wherein the selective adhering comprises providing strong bond regions at an interface between the first layer and the second layer treated with an adhesive material or processing step, and further wherein weak bond regions remain at the interface between the first layer and the second layer that are treated for a lesser degree of adhesion as compared to the strong bond regions.  
   
   
       31 . The method as in  claim 21 , wherein the selective adhering comprises providing weak bond regions at an interface between the first layer and the second layer having greater porosity than strong bond regions at the interface between the first layer and the second layer.  
   
   
       32 . The method as in  claim 21 , wherein the selective adhering comprises providing weak bond regions at an interface between the first layer and the second layer having a plurality of pillars.  
   
   
       33 . The method as in  claim 21 , wherein the selective adhering comprises providing weak bond regions at an interface between the first layer and the second layer having a porous carbon material.  
   
   
       34 . The method as in  claim 21 , wherein the selective adhering comprises providing strong bond regions at an interface between the first layer and the second layer that are irradiated to promote adhesion.  
   
   
       35 . The method as in  claim 21 , wherein the selective adhering comprises providing weak bond regions at an interface between the first layer and the second layer having a porous solid material derived from a slurry comprising the solid material and a decomposable component.  
   
   
       36 . The method as in  claim 21 , wherein the selective adhering comprises providing weak bond regions at an interface between the first layer and the second layer having a void.  
   
   
       37 . The method as in  claim 21 , wherein the selective adhering comprises providing weak bond regions at an interface between the first layer and the second layer having metal, wherein the first layer and the second layer comprise semiconductor, insulator, or a combination of semiconductor and insulator.  
   
   
       38 . The method as in  claim 21 , wherein the selective adhering comprises providing strong bond regions at an interface between the first layer and the second layer having hydrophilic characteristics.  
   
   
       39 . The method as in  claim 21 , wherein the selective adhering comprises providing strong bond regions at an interface between the first layer and the second layer having an adhesive, wherein the interface may be delaminated by light.  
   
   
       40 . The method as in  claim 21 , wherein the selective adhering comprises providing weak bond regions at an interface between the first layer and the second layer having ions or particles implanted at the interface of the first layer and the second layer.  
   
   
       41 . The method as in  claim 21 , wherein the selective adhering includes a bonding technique selected from the group consisting of eutectic, fusion, anodic, vacuum, Van der Waals, chemical adhesion, hydrophobic phenomenon, hydrophilic phenomenon, hydrogen bonding, coulombic forces, capillary forces, very short-ranged forces, or a combination comprising at least one of the foregoing bonding techniques.  
   
   
       42 . The method as in  claim 21 , wherein the selective adhering comprises providing strong bond regions at the periphery of an interface between the first layer and the second.  
   
   
       43 . The method as in  claim 42 , further comprising debonding the first layer from the second layer by selectively scanning the strong bond regions.  
   
   
       44 - 45 . (Canceled)