Semiconductor apparatus and method for fabricating the same

Abstract

A semiconductor apparatus includes a semiconductor integrated circuit including a conductive pattern; an insulating layer which is formed on the semiconductor integrated circuit to forms a plurality of base members having uneven heights; an opening which is formed through the insulating layer to expose a part of the conductive pattern; and a conductive layer which is formed on the insulating layer and the opening, the conductive layer is extending from the exposed portion of the conductive pattern to the top surface of the highest base member. An electrode is composed of the insulating layer, the opening and the conductive layer.

1 - 21 . cancel  
   
   
       22 . A semiconductor apparatus comprising: 
 a semiconductor substrate having a main surface which includes a semiconductor integrated circuit;    a base member which is formed on the main surface of the semiconductor substrate, the base member being formed of a resin and having a first surface on the main surface of the semiconductor substrate and a second surface opposite the first surface;    a conductive layer having a first portion arranged on the main surface of the semiconductor substrate and connected to the semiconductor integrated circuit, a middle portion extending from the first portion, and a second portion which extends from the middle portion and is arranged on the second surface of the base member; and    a connection substrate arranged to face the main surface of the semiconductor substrate and which is connected to the second portion of the conductive layer.    
   
   
       23 . The semiconductor apparatus according to  claim 22 , wherein the conductive layer and the base member constitute an electrode.  
   
   
       24 . The semiconductor apparatus of  claim 22 , wherein the second portion of the conductive layer has a first surface on the second surface of the base member, and has a second surface opposite the first surface thereof, 
 wherein the second surface of the second portion is connected to the connection substrate.    
   
   
       25 . The semiconductor apparatus of  claim 22 , wherein the connection substrate is a tape carrier.  
   
   
       26 . The semiconductor apparatus of  claim 22 , wherein the second portion of the conductive layer is connected to a conductive wire of the connection substrate.  
   
   
       27 . The semiconductor apparatus of  claim 22 , wherein the conductive layer comprises a multi-layered structure of different conductive materials.  
   
   
       28 . A semiconductor apparatus comprising: 
 a semiconductor substrate having a main surface which includes an integrated circuit;    a base member of an insulative material formed on the main surface of the semiconductor substrate;    a conductive layer formed on the main surface of the semiconductor substrate, the conductive layer being connected to the integrated circuit and having an extended portion that extends onto a top surface of the base member; and    a connection substrate facing the main surface of the semiconductor substrate and being connected to the extended portion of the conductive layer on the top surface of the base member.    
   
   
       29 . The semiconductor apparatus of  claim 28 , wherein the extended portion of the conductive layer has a first surface on the top surface of the base member, and has a second surface opposite the first surface, 
 wherein the connection substrate is connected to the second surface of the extended portion of the conductive layer.    
   
   
       30 . The semiconductor apparatus of  claim 28 , wherein the connection substrate is a tape carrier.  
   
   
       31 . The semiconductor apparatus of  claim 28 , wherein the extended portion of the conductive layer is connected to a conductive wire of the connection substrate.  
   
   
       32 . The semiconductor apparatus of  claim 28 , wherein the conductive layer comprises a multi-layered structure of different conductive materials.