High frequency circuit block unit, method for producing same, high frequency module device and method for producing same

Abstract

A high frequency module device having a high frequency circuit block unit including a passive device. A plural number of unit wiring layers, each formed by an insulating layer, having a passive device unit in its portion, and by a pattern wiring, are layered on a dummy substrate, and are released from the dummy substrate to form the high frequency circuit block unit ( 2 ), which is mounted on a motherboard ( 3 ). The major surfaces of the respective unit wiring layers are planarized. The passive device unit and the pattern wiring, formed on the major surface of each unit wiring layer in the high frequency circuit block unit ( 2 ), can be formed with high accuracy to improve high frequency characteristics. The high frequency circuit block unit ( 2 ) is not in need of a base substrate, thus achieves reduction in size and cost.

1 - 4 . (Canceled)  
   
   
       5 . A method for producing a high frequency circuit block unit comprising: 
 a release layer forming step of forming a release layer on a dummy substrate;    a layering step of layering a plurality of unit wiring layers on said release layer so that wiring layers of said unit wiring layers, each including a passive device and a connection land unit in a portion thereof, and each formed embedded in the major surface of an insulating layer, are electrically interconnected;    a planarizing step of planarizing the major surfaces of said plural unit wiring layers in their entirety; and    a substrate removing step of peeling off said plural unit wiring layers from said release layer for removing said dummy substrate and the release layer.    
   
   
       6 . The method for producing the high frequency circuit block unit according to  claim 5  wherein, in said planarizing step, the major surface of each of said plural unit wiring layers is planarized by chemical mechanical polishing.  
   
   
       7 . The method for producing a high frequency circuit block unit according to  claim 5  further comprising, subsequent to said substrate removing step, 
 a semiconductor chip mounting step of mounting a semiconductor chip on the major surface of said plural unit wiring layers neighboring to said release layer and/or on the major surface of the uppermost layer above said release layer, a resin layer forming step of forming a resin layer for covering said semiconductor chip so that said semiconductor chip is partially exposed, and a polishing step of polishing said semiconductor chip and said resin layer.    
   
   
       8 . A high frequency module device comprising: 
 a high frequency circuit block unit produced by layering a plurality of unit wiring layers, in each of which a wiring layer having a passive device and a connection land unit in a portion thereof is formed embedded in the major surface of an insulating layer, on a release layer formed on a major surface of a dummy substrate; said wiring layers of said plural unit wiring layers being electrically interconnected, the major surfaces of said plural unit wiring layers being planarized in their entirety, said dummy substrate and said release layer being removed on peeling off from the release layer to form the high frequency circuit block unit, and    a motherboard having a connecting portion exposed from a major surface thereof;    said high frequency circuit block unit being mounted to the major surface of said motherboard as said connection land unit and said connecting portion are electrically interconnected.    
   
   
       9 . The high frequency module device according to  claim 8  wherein the major surfaces of plural unit wiring layers in said high frequency circuit block unit have been planarized by chemical-mechanical polishing.  
   
   
       10 . The high frequency module device according to  claim 8  wherein said high frequency circuit block unit includes, on a major surface thereof neighboring to said release layer and/or on an opposite side major surface thereof opposite to said major surface, a semiconductor chip and a resin layer covering said semiconductor chip so that said semiconductor chip is partially exposed.  
   
   
       11 . The high frequency module device according to  claim 10  wherein said semiconductor chip and the resin layer have been polished.  
   
   
       12 . A method for producing a high frequency module device comprising: 
 a block unit forming step of forming a high frequency block unit by a release layer forming step of forming a release layer on a dummy substrate, a layering step of layering a plurality of unit wiring layers on said release layer, each of said unit wiring layers including a wiring layer formed embedded in the major surface of an insulating layer, said wiring layer including a passive device and a connection land unit in a portion thereof, said wiring layers of said unit wiring layers being electrically., interconnected, a planarizing step of planarizing the major surfaces of said plural unit wiring layers in their entirety, and a substrate removing step of peeling off said plural unit wiring layers from said release layer for removing said dummy substrate and the release layer, and    a block unit mounting step of mounting said high frequency circuit block unit on a major surface of a motherboard, having a connecting portion exposed from a major surface thereof, as said connecting land unit and said connecting portion are electrically interconnected.    
   
   
       13 . The method for producing a high frequency module device according to  claim 12  wherein, in said planarizing step of said block unit forming step, the major surfaces of said plural unit wiring layers are each planarized by chemical-mechanical polishing.  
   
   
       14 . The method for producing a high frequency module device according to  claim 12  wherein, in said block unit forming step, said high frequency circuit block unit is formed by executing, subsequent to said substrate removing step, a semiconductor chip mounting step of mounting a semiconductor chip on the major surface of said plural unit wiring layers neighboring to said release layer and/or on the major surface of the uppermost layer above said release layer, a resin layer forming step of forming a resin layer for covering said semiconductor chip so that said semiconductor layer is partially exposed, and a polishing step of polishing said semiconductor chip and said resin layer.