Detergent composition

Abstract

A cleaning composition comprising ( 1 ) at least one of fluoride salts and hydrogendifluoride salts; ( 2 ) an organic solvent having a hetero atom or atoms; and ( 3 ) water; a method of cleaning metal gate, contact hole, via hole and capacitor using the composition; a method of cleaning a residual polymer derived from a resist using the composition; and a method of cleaning after CMP using the composition.

1 - 18 . (Canceled).  
     
     
         19 . A method of cleaning a semiconductor substrate having at least one of a metal gate, a contact hole, a via hole and a capacitor formed thereon using a composition comprising (1) at least one of fluoride salts and hydrogendifluoride salts; (2) an organic solvent having a hetero atom or atoms; and (3) water.  
     
     
         20 . A method of removing a polymer derived from a resist remaining on an article after etching or after ion implantation using a composition comprising (1) at least one of fluoride salts and hydrogendifluoride salts; (2) an organic solvent having a hetero atom or atoms; and (3) water.  
     
     
         21 . A method of producing a semiconductor device, comprising the steps of: forming a resist pattern on a work layer consisting of an electroconductive layer on an insulating layer over a semiconductor substrate composed of silicon; forming the work layer into a specified pattern by dry-etching using the resist as a mask; and cleaning the semiconductor substrate using a composition comprising (1) at least one of fluoride salts and hydrogendifluoride salts; (2) an organic solvent having a hetero atom or atoms; and (3) water.  
     
     
         22 . A method of producing a semiconductor device, comprising the steps of: forming a specified pattern of an electroconductive layer over a semiconductor substrate composed of silicon; forming an insulating layer on the electroconductive layer; forming a resist pattern on a work layer consisting of an insulating layer; forming the work layer into a specified pattern by dry-etching using the resist as a mask; and cleaning the semiconductor substrate using a composition comprising (1) at least one of fluoride salts and hydrogendifluoride salts; (2) an organic solvent having a hetero atom or atoms; and (3) water.  
     
     
         23 . A method of cleaning a treated surface after CMP treatment in a single damascene or dual damascene process, using a composition comprising (1) at least one of fluoride salts and hydrogendifluoride salts; (2) an organic solvent having a hetero atom or atoms; and (3) water.  
     
     
         24 . A method of producing a semiconductor device, comprising the steps of: forming a work layer comprising an electroconductive layer and an insulating layer coexisting on one surface of a semiconductor substrate by a single damascene or dual damascene; and cleaning the work layer using a composition comprising (1) at least one of fluoride salts and hydrogendifluoride salts; (2) an organic solvent having a hetero atom or atoms; and (3) water.