Short-channel Schottky-barrier MOSFET device and manufacturing method

Abstract

A MOSFET device and method of fabricating are disclosed. The present invention utilizes Schottky barrier contacts for source and/or drain contact fabrication within the context of a MOSFET device structure to eliminate the requirement for halo/pocket implants and shallow source/drain extensions to control short channel effects. Additionally, the present invention unconditionally eliminates the parasitic bipolar gain associated with MOSFET fabrication, reduces manufacturing costs, tightens control of device performance parameters, and provides for superior device characteristics as compared to the prior art.

1 - 19 . (Canceled).  
   
   
       20 . A MOSFET device comprising: 
 a gate electrode on a semiconductor substrate;    a source electrode and a drain electrode on the semiconductor substrate, wherein at least one of the source electrode and the drain electrode is metal; and    an interfacial layer between the semiconductor substrate and at least one of the metal source electrode and/or the metal drain electrode.    
   
   
       21 . The device of  claim 20  wherein the interfacial layer is in areas at least proximal to the gate electrode.  
   
   
       22 . The device of  claim 20  wherein an entire Schottky or Schottky-like junction between the semiconductor substrate and at least one of the metal source electrode and the metal drain electrode incorporates the interfacial layer.  
   
   
       23 . The device of  claim 20  wherein at least in areas proximal to the gate electrode, a Schottky or Schottky-like junction between the substrate and at least one of the metal source electrode and the metal drain electrode incorporates the interfacial layer.  
   
   
       24 . The device of  claim 20  wherein at least one of the metal source electrode and/or the metal drain electrode having the interfacial layer form a Schottky or Schottky-like junction to the semiconductor substrate.  
   
   
       25 . The device of  claim 20  wherein the interfacial layer comprises an insulator.