Plasma processing apparatus

Abstract

A plasma processing apparatus capable of processing a sample with high precision by adjusting the temperature of a wafer in a wide range is provided. The plasma processing apparatus for processing a sample with a plasma generated by using a gas has: a processing chamber having an inner space reduced in pressure; a sample holder on which the sample is placed, the sample holder being disposed in the processing chamber; and a plurality of openings through which the gas is introduced into the processing chamber, the plural openings being located above the sample holder, wherein the sample holder on which the sample is placed has: ring-shaped projecting portions disposed concentrically on a surface of the sample holder to have respective surfaces thereof in contact with a surface of the sample and partition a space between the surface of the sample and the surface of the sample holder into a plurality of regions; a first opening located in a first region, which is the circumferentially outermost one of the plural regions, to introduce a gas for heat transfer therethrough; and a second opening located in a second region, which is internal of the circumferentially outermost region, to allow the gas in the region to flow out therethrough.

1 . A plasma processing apparatus for processing a sample with a plasma generated by using a gas, the apparatus comprising: 
 a processing chamber having an inner space reduced in pressure;    a sample holder on which said sample is placed, said sample holder being disposed in said processing chamber; and    a plurality of openings through which said gas is introduced into said processing chamber, said plural openings being located above the sample holder, wherein    said sample holder on which said sample is placed has:    ring-shaped projecting portions disposed concentrically on a surface of said sample holder to have respective surfaces thereof in contact with a surface of said sample and partition a space between the surface of the sample and the surface of said sample holder into a plurality of regions;    a first opening located in a first region, which is the circumferentially outermost one of said plural regions, to introduce a gas for heat transfer therethrough; and    a second opening located in a second region, which is internal of said circumferentially outermost region, to allow the gas in the region to flow out therethrough.    
   
   
       2 . The plasma processing apparatus of  claim 1 , wherein the number of said regions resulting from the partitioning is 3 or more.  
   
   
       3 . The plasma processing apparatus of  claim 1  or  2 , wherein said second region is substantially evacuated.  
   
   
       4 . A plasma processing apparatus for processing a sample with a plasma generated by using a gas, the apparatus comprising: 
 a processing chamber having an inner space reduced in pressure;    a sample holder on which said sample is placed, said sample holder being disposed in said processing chamber; and    a plurality of openings through which a gas is introduced into said processing chamber, said plural openings being located above the sample holder, wherein    said sample holder on which said sample is placed has:    a plurality of ring-shaped depressed portions over which said sample is placed, the plural ring-shaped depressed portions being disposed substantially concentrically in a surface of the sample holder;    a first opening located in a first depressed portion, which is the circumferentially outermost one of said plural ring-shaped depressed portions, to introduce a gas for heat transfer therethrough; and    a second opening located in a second depressed portion, which is internal of said circumferentially outermost depressed portion, to allow the gas in the depressed portion to flow out therethrough.    
   
   
       5 . The plasma processing apparatus of  claim 4 , wherein the number of said depressed portions is 2 or more.  
   
   
       6 . The plasma processing apparatus of  claim 4  or  5 , wherein said second depressed portion is substantially evacuated.  
   
   
       7 . The plasma processing apparatus according to  claim 1  or  2 , said apparatus further comprising: 
 a plurality of paths each extending through an inside of said sample holder, said plural paths being disposed in inner (or central) portions and outer peripheral portions of inside of the sample holder, respectively, to allow refrigerants adjusted to different temperatures to flow therethrough.    
   
   
       8 . The plasma processing apparatus according to  claim 4  or  5 , said apparatus further comprising: 
 a plurality of paths each extending through an inside of said sample holder, said plural paths being disposed in inner (or central) portions and outer peripheral portions of inside of the sample holder, respectively, to allow refrigerants adjusted to different temperatures to flow therethrough.