Atomic layer deposition apparatus

Abstract

An atomic layer deposition method includes positioning a semiconductor substrate within an atomic layer deposition chamber. A fixed volume first precursor gas charge is provided within a gas flow path to the deposition chamber. A fixed volume purge gas charge is provided within the gas flow path serially upstream of the first precursor gas charge. The first precursor gas charge and the purge gas charge are serially flowed along the gas flow path to the substrate within the deposition chamber effective to form a monolayer on the substrate and purge at least some of the first precursor gas from the substrate. Apparatus are also disclosed.

1 - 26 . (Canceled).  
   
   
       27 . An atomic layer deposition precursor feeding manifold assembly, comprising: 
 a body comprising an outlet configured to communicate with an atomic layer deposition chamber;    the body comprising a plurality of serially arranged gas chambers in serial fluid communication with the outlet along a gas flow path which includes the gas chambers;    at least one respective isolation valve separating adjacent of the gas chambers; and    at least one respective gas inlet in fluid communication with said respective gas chambers.    
   
   
       28 . The assembly of  claim 27  wherein the serially arranged gas chambers are of respective fixed volumes.  
   
   
       29 . The assembly of  claim 28  wherein the respective fixed volumes are equal in amount.  
   
   
       30 . The assembly of  claim 28  wherein the respective fixed volumes are different in amount.  
   
   
       31 . The assembly of  claim 27  wherein at least one of the serially arranged gas chambers is of variable volume.  
   
   
       32 . The assembly of  claim 27  wherein the serially arranged gas chambers are at least two in number.  
   
   
       33 . The assembly of  claim 27  wherein the serially arranged gas chambers are at least three in number.  
   
   
       34 . The assembly of  claim 27  wherein the serially arranged gas chambers are at least four in number.  
   
   
       35 . The assembly of  claim 27  comprising at least one respective isolation valve to the respective gas chambers associated with the respective gas inlets.  
   
   
       36 . The assembly of  claim 27  comprising only one gas inlet associated with each gas chamber.  
   
   
       37 . The assembly of  claim 27  wherein the gas flow path through the gas chambers and the outlet is along a straight line.  
   
   
       38 . The assembly of  claim 37  wherein the respective gas inlets at least proximate the respective gas chambers extend along respective gas flow paths which are parallel to one another, and perpendicular the gas flow path straight line.  
   
   
       39 . An atomic layer deposition apparatus comprising: 
 a deposition chamber; and    a gas feed manifold assembly in fluid communication with the deposition chamber, the assembly comprising a plurality of serially arranged gas chambers in serial fluid communication with the deposition chamber along a gas flow path which includes the gas chambers, at least one respective valve separating adjacent of the gas chambers, and at least one respective gas inlet in fluid communication with the respective gas chambers.    
   
   
       40 . The apparatus of  claim 39  wherein the serially arranged gas chambers are of respective fixed volumes.  
   
   
       41 . The apparatus of  claim 40  wherein the respective fixed volumes are equal in amount.  
   
   
       42 . The apparatus of  claim 40  wherein the respective fixed volumes are different in amount.  
   
   
       43 . The apparatus of  claim 39  wherein at least one of the serially arranged gas chambers is of variable volume.  
   
   
       44 . The apparatus of  claim 39  wherein the serially arranged gas chambers are at least two in number.  
   
   
       45 . The apparatus of  claim 39  wherein the serially arranged gas chambers are at least three in number.  
   
   
       46 . The apparatus of  claim 39  wherein the serially arranged gas chambers are at least four in number.  
   
   
       47 . The apparatus of  claim 39  comprising at least one respective isolation valve to the respective gas chambers associated with the respective gas inlets.  
   
   
       48 . The apparatus of  claim 39  comprising only one gas inlet associated with each gas chamber.  
   
   
       49 . The apparatus of  claim 39  wherein the gas flow path through the gas chambers to the deposition chamber is along a straight line.  
   
   
       50 . The apparatus of  claim 49  wherein the respective gas inlets at least proximate the respective gas chambers extend along respective gas flow paths which are parallel to one another, and perpendicular the gas flow path straight line.  
   
   
       51 . An atomic layer deposition apparatus comprising: 
 a deposition chamber;    a first gas feed manifold assembly in fluid communication with the deposition chamber, the first assembly comprising a plurality of serially arranged first gas chambers in serial fluid communication with the deposition chamber along a first gas flow path which includes the first gas chambers, at least one first gas flow path valve separating adjacent of the first gas chambers, and at least one respective first gas inlet in fluid communication with the respective first gas chambers; and    a second gas feed manifold assembly in fluid communication with the deposition chamber, the second assembly comprising a plurality of serially arranged second gas chambers in serial fluid communication with the deposition chamber along a second gas flow path which includes the second gas chambers, at least one second gas flow path valve separating adjacent of the second gas chambers, and at least one respective second gas inlet in fluid communication with the respective second gas chambers.    
   
   
       52 . The apparatus of  claim 51  wherein the serially arranged first and second gas chambers are equal to each other in number.  
   
   
       53 . The apparatus of  claim 51  wherein the serially arranged first and second gas chambers are each at least two in number.  
   
   
       54 . The apparatus of  claim 51  wherein the serially arranged first and second gas chambers are each at least three in number.  
   
   
       55 . The apparatus of  claim 51  wherein the serially arranged first and second gas chambers are each at least four in number.  
   
   
       56 . The apparatus of  claim 51  wherein the first gas flow path through the first gas chambers to the deposition chamber is along a straight line.  
   
   
       57 . The apparatus of  claim 51  wherein the second gas flow path through the second gas chambers to the deposition chamber is along a straight line.  
   
   
       58 . The apparatus of  claim 51  wherein, 
 the first gas flow path through the first gas chambers to the deposition chamber is along a first straight line; and    the second gas flow path through the second gas chambers to the deposition chamber is along a second straight line.