High power radio frequency integrated circuit capable of impeding parasitic current loss

Abstract

A high power RF IC capable of impeding parasitic current loss and method of manufacturing the same. First a step of semiconductor front-side processing for the high power RF components that includes inductive components is performed. Afterwards, the backside of semiconductor base is polished to a certain thickness, and then lithography and etching processes is employed for forming a backside trench contact window. A backside deposition for oxide insulation layer can be performed so that the oxide insulation layer can be located in the semiconductor base right under the inductive components for impeding the parasitic current loss generated by the inductive components in the semiconductor base due to electromagnetic induction. Therefore, performance of the inductive components operating in high frequency can be improved.

1 . A high power RF IC capable of impeding parasitic current loss, comprising: 
 a semiconductor base, comprising an active region and an isolation region thereon;    a plurality of active components, provided in the active region of the semiconductor base;    a plurality of isolation structures, provided in the isolation region for isolating the active components;    at least one dielectric layer, located on the semiconductor base for covering the active components and the isolation structures so that components located above and under the dielectric layer can be insulated;    a plurality of inductive components, formed on a surface of the dielectric layer located above the isolation structures; and    a trench insulation layer, provided in the semiconductor base under the inductive components so that the trench insulation layer can be directly connected to the isolation structures.    
   
   
       2 . The high power RF IC capable of impeding parasitic current loss as claimed in  claim 1 , wherein the active component comprises a field oxide transistor, bipolar transistor or a combination of two kinds of transistor.  
   
   
       3 . The high power RF IC capable of impeding parasitic current loss as claimed in  claim 1 , wherein the active component is formed by a structure of a transistor component comprising a gate oxide layer, polysilicon layer, gate spacer, and source/drain region.  
   
   
       4 . The high power RF IC capable of impeding parasitic current loss as claimed in  claim 1 , wherein the isolation structure is a field oxide isolation structure or shallow trench isolation structure.  
   
   
       5 . The high power RF IC capable of impeding parasitic current loss as claimed in  claim 1 , wherein a material of the dielectric layer is made of silicon dioxide or other low K materials.  
   
   
       6 . The high power RF IC capable of impeding parasitic current loss as claimed in  claim 1 , wherein the inductive component comprises a multiple-layered inductive coil, and each layer of inductive coil is electrically insulated from one another by the dielectric layer while electrically connected to one another by the plug.  
   
   
       7 . The high power RF IC capable of impeding parasitic current loss as claimed in  claim 1 , wherein material of the trench insulation layer is selected from a combination of silicon oxide, silicon nitride, and other chemical deposition insulating materials.  
   
   
       8 . The high power RF IC capable of impeding parasitic current loss as claimed in  claim 1 , wherein the trench insulation layer can form a trench contact window by employing lithography and back-etching techniques and form the trench insulation layer by means of chemical vapor deposition.  
   
   
       9 . A manufacturing method of high power RF IC capable of impeding parasitic current loss comprising: 
 providing a semiconductor base;    forming isolation structures, active components, and a dielectric layer in a sequential order so that the dielectric layer can cover the active components and the isolation structures for insulating from the components above and under the dielectric layers, and also forming a plurality of inductive components on the dielectric layer above the isolation structures;    forming a protection layer on the semiconductor base for covering the above-mentioned components;    polishing the back of the semiconductor base to a certain thickness to form a patterned resist layer on the back of the semiconductor base;    using the patterned resist layer as a mask to etch the back of the semiconductor base until the isolation structure is reached so as to form a trench contact window, and then the patterned resist layer will be removed afterwards; and    performing vapor deposition and planarization for the insulation layer in the contact window to form a trench insulation layer that is directly connected to the isolation structure and located under the inductive component.    
   
   
       10 . The manufacturing method of high power RF IC capable of impeding parasitic current loss as claimed in  claim 9 , wherein the isolation structure is a field oxide isolation structure or shallow trench isolation structure.  
   
   
       11 . The manufacturing method of high power RF IC capable of impeding parasitic current loss as claimed in  claim 9 , wherein the active component comprises a field oxide transistor, bipolar transistor, or a combination of two kinds of transistor.  
   
   
       12 . The manufacturing method of high power RF IC capable of impeding parasitic current loss as claimed in  claim 9 , wherein the active component is formed by a structure of transistor component comprising a gate oxide layer, a polysilicon layer, a gate spacer, and a source/drain region.  
   
   
       13 . The manufacturing method of high power RF IC capable of impeding parasitic current loss as claimed in  claim 9 , wherein material of the dielectric layer is made of silicon dioxide or other low K materials.  
   
   
       14 . The manufacturing method of high power RF IC capable of impeding parasitic current loss as claimed in  claim 9 , wherein the inductive component comprises a multi-layered inductive coil, and each layer of inductive coil is electrically insulated from one another by the dielectric layer while electrically connected to one another by the plug.  
   
   
       15 . The manufacturing method of high power RF IC capable of impeding parasitic current loss as claimed in  claim 9 , wherein material of the trench insulation layer is selected from a combination of silicon oxide, silicon nitride, and other chemical deposition insulating materials.  
   
   
       16 . The manufacturing method of high power RF IC capable of impeding parasitic current loss as claimed in  claim 9 , wherein the planarization processing for the trench insulation layer employs chemical dry etching or chemical mechanical polishing for thorough processing.  
   
   
       17 . The manufacturing method of high power RF IC capable of impeding parasitic current loss as claimed in  claim 9 , wherein the vapor deposition for the insulation layer is formed by chemical vapor deposition.