System and method for cleaning semicondutor fabrication equipment parts

Abstract

A process for cleaning semiconductor fabrication equipment parts includes determining a definition for a clean part including multiple maximum acceptable impurity levels; determining an initial multiple impurity levels of a part prior to its cleaning; determining a cleaning process to apply to the part; applying the cleaning process to the part, wherein the cleaning process creates reduced multiple impurity levels for the part below that of the initial multiple impurity levels; determining the reduced multiple impurity levels; comparing the reduced multiple impurity levels against the multiple maximum acceptable impurities levels of the definition; and repeating the application of the cleaning process to the part if the reduced multiple impurity levels do not meet the definition of a clean part. A dilute aqueous cleaning solution for cleaning parts includes 0.5-1.5% wt. HF; 0.1-0.5% wt. HNO 3 ; and 1-10% wt H 2 O 2 . A method for reducing sub-surface damage to a part includes determining how deep is the sub-surface damage beneath a surface of a part; chemically etching said surface of said part; and stopping said chemical etching of said surface at about said depth of said sub-surface damage.

1 . A process for cleaning semiconductor fabrication equipment parts comprising: 
 determining a definition for a clean part including multiple maximum acceptable impurity levels;    determining an initial multiple impurity levels of a part prior to its cleaning;    determining a cleaning process to apply to the part;    applying the cleaning process to the part, wherein the cleaning process creates reduced multiple impurity levels for the part below that of said initial multiple impurity levels;    determining said reduced multiple impurity levels;    comparing said reduced multiple impurity levels against said multiple maximum acceptable impurities levels of said definition; and    repeating the application of said cleaning process to said part if said reduced multiple impurity levels do not meet said definition of a clean part.    
     
     
         2 . A process as recited in  claim 1 , further comprising testing the part in reassembled equipment in which the part was designed to operate.  
     
     
         3 . A process as recited in  claim 2 , further comprising the operation of repeating a cleaning process on the part if the part does not function properly in the reassembled equipment.  
     
     
         4 . A process as recited in  claim 1 , wherein at least one impurity level is determined utilizing a surface particle test.  
     
     
         5 . A process of  claim 1 , wherein at least one impurity level is determined using a liquid particle test.  
     
     
         6 . A process of  claim 1 , wherein at least one impurity level is determined by using acid-extraction ICP-MS.  
     
     
         7 . A dilute aqueous cleaning solution for parts comprising: 
 0.5-1.5% wt. HF;    0.1-0.5% wt. HNO 3 ; and    1-10% wt H 2   0   2 .    
     
     
         8 . A dilute aqueous cleaning solution as recited in  claim 7  wherein the concentration of H 2   0   2  is no greater than about 5% wt.  
     
     
         9 . A method for reducing sub-surface damage to a part comprising: 
 determining how deep is the sub-surface damage beneath a surface of a part;    chemically etching said surface of said part; and    stopping said chemical etching of said surface at about said depth of said sub-surface damage.    
     
     
         10 . A method for cleaning a part comprising: 
 performing an ultrasonication cleaning process to a surface of a part to be cleaned;    spray rinsing said part with a dilute chemical mixture; and    spray rinsing said part with deionized water.    
     
     
         11 . A method for cleaning a part as recited in  claim 10  further comprising repeating said spray rinsing of said part with a dilute chemical mixture and spray rinsing said part with deionized water based upon the specification of purity for said part.  
     
     
         12 . A method for determining contamination of an openable part having inner surfaces comprising: 
 introducing a part into a controlled clean environment of at least class 1000;    opening said part in said controlled clean environment; and    running contamination analysis on said inner surfaces of said part.    
     
     
         13 . A method for determining contamination as recited in  claim 12  where running contamination analysis includes applying a known volume of ultra pure water to a cavity of a part, extracting said water, and analyzing contaminants found in said water.  
     
     
         14 . A method for determining contamination as recited in  claim 12  where running contamination analysis includes applying a known volume of a high purity extraction solution to a cavity of a part, extracting said extraction solution, and analyzing contaminants found in said extraction solution.  
     
     
         15 . A method for cleaning ceramic parts comprising: 
 immersing a ceramic part into a first chemical bath to damage contaminant bonds;    heating said ceramic part in a furnace after said contaminant bonds are damaged; and    immersing said ceramic part in a second chemical bath to remove contaminants.    
     
     
         16 . A method for cleaning ceramic parts as recited in  claim 15  wherein said first chemical bath is a dilute chemical bath including HF and HNO 3  which is heated to about 60-80° C.  
     
     
         17 . A method for cleaning textured quartz parts comprising: 
 immersing a textured quartz part into an ultrasonic chemical bath;    immersing said textured quartz part into an ultrasonication water bath; and    immersing said textured quartz part into a deionized water bath.    
     
     
         18 . A method for cleaning metallic impurities from textured ceramic surfaces comprising: 
 immersing a ceramic part having a textured surface into a heated chemical bath;    rinsing said ceramic part in deionized water;    immersing said part in a dilute acid bath and rinsing;    visually inspecting said part; and    repeatedly immersing said part in said dilute acid bath until it passes visual inspection.    
     
     
         19 . A method for cleaning metallic impurities as recited in  claim 18  further comprising: 
 immersing said part in an ultrasonification overflowing bath.    
     
     
         20 . A method for determining the cleanliness of semiconductor fabrication equipment parts comprising: 
 testing the parts before a cleaning process for at least one of particles, metallic impurities and organics;    testing the parts after certain steps in the cleaning process for at least one of particles, metallic impurities and organics; and    testing the parts after a final cleaning step for at least one of particles, metallic impurities and organics.    
     
     
         21 . A method for removing particles on a textured surface of a semiconductor fabrication equipment part comprising: 
 determining a chemical bonding characteristic of the particles;    identifying a type of particles embedded in the textured surface;    measuring a depth of any subsurface damage; and    performing a combination of ultrasonication and chemical etching to the textured surface based upon said chemical bonding characteristics, said type of particles and said depth of subsurface damage.