Sputtering apparatus and manufacturing method of metal layer/metal compound layer by using thereof

Abstract

A sputtering apparatus is provided. The sputtering apparatus comprises cooling water system having a temperature-controlling device for controlling the temperature of the sidewalls of the reaction chamber. During the deposition process of titanium/titanium nitride, the sidewall temperature of the chamber is controlled at about 50° C.˜70° C. for reducing the difference of temperature distribution in the chamber so that the reaction temperature within the reaction chamber can be rendered substantially uniform.

1 . A manufacturing method of metal/metal compound layer, comprising: 
 placing a wafer in a chamber;    forming a metal layer on the wafer;    forming a metal compound layer over the metal layer in the chamber; and    controlling a sidewall temperature of the chamber to be kept at about 50° C.˜70° C. during the steps of forming the metal layer and the metal compound layer.    
   
   
       2 . The manufacturing method of  claim 1 , wherein the step of forming the metal layer comprises forming a titanium layer.  
   
   
       3 . The manufacturing method of  claim 1 , wherein the step of forming the metal compound layer comprises forming a titanium nitride layer.  
   
   
       4 . The manufacturing method of  claim 1 , wherein the step of forming the metal layer on the wafer comprises supplying argon to the chamber.  
   
   
       5 . The manufacturing method of  claim 1 , wherein the step of forming the metal layer on the wafer comprises performing magnetron DC sputtering.  
   
   
       6 . The manufacturing method of  claim 1 , wherein the step of forming the metal compound layer over the metal layer in the chamber comprises supplying nitrogen and argon to the chamber.  
   
   
       7 . The manufacturing method of  claim 1 , wherein the step of forming the metal compound layer over the metal layer in the chamber comprises performing reactive sputtering.  
   
   
       8 . The manufacturing method of  claim 1 , wherein the step of controlling the sidewall temperature of the chamber to be kept at about 50° C. 70° C. during the steps of forming the metal layer and the metal compound layer comprises: 
 measuring the sidewall temperature of the chamber; and    controlling a flow rate of cooling water based on the sidewall temperature so as to keep the sidewall temperature of the chamber at about 50° C.˜70° C.    
   
   
       9 . A manufacturing method of titanium/titanium nitride, comprising: 
 placing a wafer in a chamber;    performing magnetron DC sputtering process in the chamber to form a titanium layer on the wafer;    performing reactive sputtering process in the chamber to form a titanium nitride layer over the titanium layer; and    controlling a sidewall temperature of the chamber to be kept at about 50° C.˜70° C. during the processes to form the titanium layer and the titanium nitride layer.    
   
   
       10 . The manufacturing method of  claim 9 , wherein the step of performing magnetron DC sputtering process in the chamber to form the titanium layer on the wafer comprises supplying argon to the chamber.  
   
   
       11 . The manufacturing method of  claim 9 , wherein the step of performing reactive sputtering process in the chamber to form the titanium compound layer over the titanium layer comprises supplying nitrogen and argon to the chamber.