US2005041369A1PendingUtilityA1

Capacitor module and semiconductor

Assignee: MITSUBISHI ELECTRIC CORPPriority: Apr 25, 2001Filed: Sep 14, 2004Published: Feb 24, 2005
Est. expiryApr 25, 2021(expired)· nominal 20-yr term from priority
H10W 90/753H10W 74/00H10W 72/5524H10W 72/5475H10W 72/5363H10W 90/00H02M 7/003H01G 4/228Y02T10/70
41
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Claims

Abstract

A capacitor module incorporating a ceramic capacitor having terminal members for reducing stress caused by thermal stress or electrostriction in the ceramic capacitor itself, and a semiconductor device using the capacitor module. The capacitor module and the semiconductor device are designed to have a reduced size and improved reliability. The semiconductor device has a power converter circuit constituted by switching devices and diodes, a P-polarity conductor and an N-polarity conductor for supplying electric power to the power converter circuit, a ceramic capacitor having two external electrodes, flexible terminal members connected to the external electrodes, a heat radiation plate provided at the bottom of a case, an insulating resin with which the power converter circuit is covered, a P-polarity connection conductor for connection between the terminal member on one side of the ceramic capacitor and the P-polarity conductor, an N-polarity connection conductor for connection between the terminal member on the other side of the ceramic capacitor and the N-polarity conductor, and a molded wiring plate on which a major surface of the ceramic capacitor is supported.

Claims

exact text as granted — not AI-modified
1 . A capacitor module comprising: 
 a ceramic capacitor having major surfaces facing in opposite directions, side surfaces facing in other opposite directions, and external electrodes respectively provided on the side surfaces facing in other opposite directions;    terminal members respectively joined to the external electrodes of said ceramic capacitor, said terminal members having electrical conductivity and flexibility;    a P-polarity connection conductor which connects said terminal member on one side of said ceramic capacitor to a P-polarity conductor provided outside;    an N-polarity connection conductor which connects said terminal member on the other side of said ceramic capacitor to an N-polarity conductor provided outside; and    a wiring plate provided with said P-polarity connection conductor and said N-polarity connection conductor, the major surface of said ceramic capacitor being supported on said wiring plate.    
   
   
       2 . A capacitor module according to  claim 1 , wherein a flexible member is disposed between said ceramic capacitor and said wiring plate.  
   
   
       3 . A capacitor module according to  claim 1 , wherein each of said P-polarity connection conductor and said N-polarity connection conductor is formed integrally with said terminal member.  
   
   
       4 . A capacitor module according to  claim 1 , wherein said P-polarity connection conductor and said N-polarity connection conductor are placed parallel to each other by being spaced apart by a predetermined distance, with an insulating layer disposed therebetween.  
   
   
       5 . A capacitor module according to  claim 1 , wherein said wiring plate is formed of a synthetic resin which is molded so that said P-polarity connection conductor and said N-polarity connection conductor are embedded in and integrally combined with the synthetic resin.  
   
   
       6 . A capacitor module according to  claim 1 , wherein said external electrodes of said ceramic capacitor or said terminal members connected to said external electrodes are jointed to said P-polarity connection conductor and said N-polarity connection conductor by solid phase joining.  
   
   
       7 . A semiconductor device comprising: 
 a power converter circuit constituted by switching devices and diodes and having a plurality of phases;    a P-polarity conductor and an N-polarity conductor for supplying electric power to the respective phases of said power converter circuit;    a capacitor module connected to said P-polarity conductor and said N-polarity conductor;    a case in which said power converter circuit, said P-polarity conductor, said N-polarity conductor, and said capacitor module are accommodated;    a heat radiation plate provided at a bottom of said case; and    an insulating resin with which at least said power converter circuit is covered,    wherein said capacitor module comprises:    a ceramic capacitor having major surfaces facing in opposite directions, side surfaces facing in other opposite directions, and external electrodes respectively provided on the side surfaces facing in other opposite directions;    terminal members respectively joined to the external electrodes of said ceramic capacitor, said terminal members having electrical conductivity and flexibility;    a P-polarity connection conductor which connects said terminal member on one side of said ceramic capacitor to said P-polarity conductor;    an N-polarity connection conductor which connects said terminal member on the other side of said ceramic capacitor to said N-polarity conductor; and    a wiring plate provided with said P-polarity connection conductor and said N-polarity connection conductor, the major surface of said ceramic capacitor being supported on said wiring plate.    
   
   
       8 . A semiconductor device according to  claim 7 , wherein a flexible member is disposed between said ceramic capacitor and said wiring plate.  
   
   
       9 . A semiconductor device according to  claim 7 , wherein each of said P-polarity connection conductor and said N-polarity connection conductor is formed integrally with said terminal member.  
   
   
       10 . A semiconductor device according to  claim 7 , further comprising a partition member provided in said case to separate a region for said power converter circuit and a region for said ceramic capacitor from each other.  
   
   
       11 . A semiconductor device according to  claim 7 , wherein said P-polarity connection conductor and said N-polarity connection conductor are placed parallel to each other by being spaced apart by a predetermined distance, with an insulating layer provided therebetween.  
   
   
       12 . A semiconductor device according to  claim 7 , wherein said wiring plate is formed of a synthetic resin which is molded so that said P-polarity connection conductor and said N-polarity connection conductor are embedded in and integrally combined with the synthetic resin.  
   
   
       13 . A semiconductor device according to  claim 7 , wherein the external electrodes of said ceramic capacitor or said terminal members connected to the external electrodes are jointed to said P-polarity connection conductor and said N-polarity connection conductor by solid phase joining.  
   
   
       14 . A semiconductor device according to  claim 7 , wherein said P-polarity connection conductor and said N-polarity connection conductor are screwed to said P-polarity conductor and said N-polarity conductor directly or with an electroconductive connection member provided therebetween.  
   
   
       15 . A semiconductor device according to  claim 7 , wherein said P-polarity connection conductor and said N-polarity connection conductor are fixed by an electroconductive fixing material having thermal conductivity to said P-polarity conductor and said N-polarity conductor directly or with an electroconductive connection member provided therebetween.  
   
   
       16 . A semiconductor device according to  claim 7 , wherein said P-polarity connection conductor and said N-polarity connection conductor are welded to said P-polarity conductor and said N-polarity conductor directly or with an electroconductive connection member provided therebetween.  
   
   
       17 . A semiconductor device according to  claim 10 , wherein an insulating member for thermal connection between said P-polarity and N-polarity conductors and said heat radiation plate is provided at least between said P-polarity and N-polarity conductors and said heat radiation plate in the region for said ceramic capacitor partitioned by said partition member.  
   
   
       18 . A semiconductor device according to  claim 17 , wherein said insulating member comprises a silicone rubber sheet.  
   
   
       19 . A semiconductor device according to  claim 17 , wherein said insulating member is an epoxy resin.

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