Capacitor module and semiconductor
Abstract
A capacitor module incorporating a ceramic capacitor having terminal members for reducing stress caused by thermal stress or electrostriction in the ceramic capacitor itself, and a semiconductor device using the capacitor module. The capacitor module and the semiconductor device are designed to have a reduced size and improved reliability. The semiconductor device has a power converter circuit constituted by switching devices and diodes, a P-polarity conductor and an N-polarity conductor for supplying electric power to the power converter circuit, a ceramic capacitor having two external electrodes, flexible terminal members connected to the external electrodes, a heat radiation plate provided at the bottom of a case, an insulating resin with which the power converter circuit is covered, a P-polarity connection conductor for connection between the terminal member on one side of the ceramic capacitor and the P-polarity conductor, an N-polarity connection conductor for connection between the terminal member on the other side of the ceramic capacitor and the N-polarity conductor, and a molded wiring plate on which a major surface of the ceramic capacitor is supported.
Claims
exact text as granted — not AI-modified1 . A capacitor module comprising:
a ceramic capacitor having major surfaces facing in opposite directions, side surfaces facing in other opposite directions, and external electrodes respectively provided on the side surfaces facing in other opposite directions; terminal members respectively joined to the external electrodes of said ceramic capacitor, said terminal members having electrical conductivity and flexibility; a P-polarity connection conductor which connects said terminal member on one side of said ceramic capacitor to a P-polarity conductor provided outside; an N-polarity connection conductor which connects said terminal member on the other side of said ceramic capacitor to an N-polarity conductor provided outside; and a wiring plate provided with said P-polarity connection conductor and said N-polarity connection conductor, the major surface of said ceramic capacitor being supported on said wiring plate.
2 . A capacitor module according to claim 1 , wherein a flexible member is disposed between said ceramic capacitor and said wiring plate.
3 . A capacitor module according to claim 1 , wherein each of said P-polarity connection conductor and said N-polarity connection conductor is formed integrally with said terminal member.
4 . A capacitor module according to claim 1 , wherein said P-polarity connection conductor and said N-polarity connection conductor are placed parallel to each other by being spaced apart by a predetermined distance, with an insulating layer disposed therebetween.
5 . A capacitor module according to claim 1 , wherein said wiring plate is formed of a synthetic resin which is molded so that said P-polarity connection conductor and said N-polarity connection conductor are embedded in and integrally combined with the synthetic resin.
6 . A capacitor module according to claim 1 , wherein said external electrodes of said ceramic capacitor or said terminal members connected to said external electrodes are jointed to said P-polarity connection conductor and said N-polarity connection conductor by solid phase joining.
7 . A semiconductor device comprising:
a power converter circuit constituted by switching devices and diodes and having a plurality of phases; a P-polarity conductor and an N-polarity conductor for supplying electric power to the respective phases of said power converter circuit; a capacitor module connected to said P-polarity conductor and said N-polarity conductor; a case in which said power converter circuit, said P-polarity conductor, said N-polarity conductor, and said capacitor module are accommodated; a heat radiation plate provided at a bottom of said case; and an insulating resin with which at least said power converter circuit is covered, wherein said capacitor module comprises: a ceramic capacitor having major surfaces facing in opposite directions, side surfaces facing in other opposite directions, and external electrodes respectively provided on the side surfaces facing in other opposite directions; terminal members respectively joined to the external electrodes of said ceramic capacitor, said terminal members having electrical conductivity and flexibility; a P-polarity connection conductor which connects said terminal member on one side of said ceramic capacitor to said P-polarity conductor; an N-polarity connection conductor which connects said terminal member on the other side of said ceramic capacitor to said N-polarity conductor; and a wiring plate provided with said P-polarity connection conductor and said N-polarity connection conductor, the major surface of said ceramic capacitor being supported on said wiring plate.
8 . A semiconductor device according to claim 7 , wherein a flexible member is disposed between said ceramic capacitor and said wiring plate.
9 . A semiconductor device according to claim 7 , wherein each of said P-polarity connection conductor and said N-polarity connection conductor is formed integrally with said terminal member.
10 . A semiconductor device according to claim 7 , further comprising a partition member provided in said case to separate a region for said power converter circuit and a region for said ceramic capacitor from each other.
11 . A semiconductor device according to claim 7 , wherein said P-polarity connection conductor and said N-polarity connection conductor are placed parallel to each other by being spaced apart by a predetermined distance, with an insulating layer provided therebetween.
12 . A semiconductor device according to claim 7 , wherein said wiring plate is formed of a synthetic resin which is molded so that said P-polarity connection conductor and said N-polarity connection conductor are embedded in and integrally combined with the synthetic resin.
13 . A semiconductor device according to claim 7 , wherein the external electrodes of said ceramic capacitor or said terminal members connected to the external electrodes are jointed to said P-polarity connection conductor and said N-polarity connection conductor by solid phase joining.
14 . A semiconductor device according to claim 7 , wherein said P-polarity connection conductor and said N-polarity connection conductor are screwed to said P-polarity conductor and said N-polarity conductor directly or with an electroconductive connection member provided therebetween.
15 . A semiconductor device according to claim 7 , wherein said P-polarity connection conductor and said N-polarity connection conductor are fixed by an electroconductive fixing material having thermal conductivity to said P-polarity conductor and said N-polarity conductor directly or with an electroconductive connection member provided therebetween.
16 . A semiconductor device according to claim 7 , wherein said P-polarity connection conductor and said N-polarity connection conductor are welded to said P-polarity conductor and said N-polarity conductor directly or with an electroconductive connection member provided therebetween.
17 . A semiconductor device according to claim 10 , wherein an insulating member for thermal connection between said P-polarity and N-polarity conductors and said heat radiation plate is provided at least between said P-polarity and N-polarity conductors and said heat radiation plate in the region for said ceramic capacitor partitioned by said partition member.
18 . A semiconductor device according to claim 17 , wherein said insulating member comprises a silicone rubber sheet.
19 . A semiconductor device according to claim 17 , wherein said insulating member is an epoxy resin.Join the waitlist — get patent alerts
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