Temperature-compensated crystal oscillator

Abstract

An inventive temperature-compensated crystal oscillator has a construction such that a crystal oscillator element ( 5 ) is accommodated in a container ( 1 ) and an IC element ( 7 ) for controlling an oscillation output on the basis of the oscillation of the crystal oscillator element ( 5 ) is mounted on a lower surface of the container ( 1 ). A plurality of electrode pads ( 10 ) at least including plural crystal electrode pads connected to the crystal oscillator element ( 5 ), plural writing control electrode pads, and an oscillation output electrode pad, a ground electrode pad, a power source voltage electrode pad and an oscillation control electrode pad connected to surface mounting external terminals are arranged in a matrix configuration of m rows×n columns (wherein m and n are natural numbers not smaller than 2 ) in an IC element mounting area. The IC element ( 7 ) is electrically connected to the electrode pads ( 10 ). The temperature-compensated crystal oscillator is excellent in IC element bonding reliability, and meets the need for the size reduction of the entire structure.

1 . A temperature-compensated crystal oscillator comprising: 
 a container accommodating therein a crystal oscillator element;    a mounting base bonded to a lower surface of the container and having surface mounting external terminals provided on a lower surface thereof; and    an IC element mounted on the mounting base for controlling an oscillation output on the basis of temperature compensation data for compensating for a temperature characteristic of the crystal oscillator element;    wherein a plurality of electrode pads including plural crystal electrode pads connected to the crystal oscillator element, an oscillation output electrode pad, a ground electrode pad, a power source voltage electrode pad, and a writing electrode pad for writing the temperature compensation are arranged in a matrix configuration of m rows×n columns (wherein m and n are natural numbers not smaller than 2) in an IC element mounting area on the mounting base;    wherein the IC element has a plurality of connection pads provided on a main surface thereof and electrically connected to the corresponding electrode pads.    
   
   
       2 . A temperature-compensated crystal oscillator according to  claim 1 , wherein at least one of the electrode pads arranged in the IC element mounting area on the mounting base is a dummy electrode pad bonded to a corresponding one of the connection pads of the IC element.  
   
   
       3 . A temperature-compensated crystal oscillator according to  claim 1 , wherein the electrode pads are arranged at a predetermined pitch linearly in the rows and in the columns, and the respective rows extend perpendicularly to the respective columns.  
   
   
       4 . A temperature-compensated crystal oscillator according to  claim 1 , wherein the mounting base comprises at least two laminated insulative layers and an interconnection conductor provided between the two insulative layers and connected to a via-hole conductor disposed just below or above the electrode pads.  
   
   
       5 . A temperature-compensated crystal oscillator according to  claim 4 , wherein the natural numbers m and n are not smaller than 3, and the electrode pad connected to the interconnection conductor via the via-hole conductor is surrounded by the other electrode pads.  
   
   
       6 . A temperature-compensated crystal oscillator according to  claim 1 , wherein the IC element comprises a semiconductor device and a re-interconnection layer provided on a main surface of the semiconductor device for associating the connection pads of the IC element with electrode pad positions.  
   
   
       7 . A temperature-compensated crystal oscillator according to  claim 1 , wherein the mounting base has a planar shape, and a spacer having a thickness greater than a height of the IC element is provided on the lower surface of the container.  
   
   
       8 . A temperature-compensated crystal oscillator according to  claim 1 , wherein the mounting base has a cavity formed in an upper surface thereof and accommodating therein the IC element, and an upper surface portion of the mounting base around an opening of the cavity is bonded to the lower surface of the container.  
   
   
       9 . A temperature-compensated crystal oscillator according to  claim 1 , wherein the mounting base has a cavity accommodating therein the IC element, and is bonded to the lower surface of the container with a surface portion thereof around an opening of the cavity facing downward.  
   
   
       10 . A temperature-compensated crystal oscillator comprising a mounting base having a cavity which opens to an upper surface of the mounting base, a crystal oscillator element provided in the cavity, and an IC element provided in the cavity for controlling a predetermined oscillation output on the basis of temperature compensation data for compensating for a temperature characteristic of the crystal oscillator element, the mounting base having a lower surface serving as a mounting surface; 
 wherein a plurality of electrode pads including a pair of crystal electrode pads connected to the crystal oscillator element, an oscillation output electrode pad, a ground electrode pad, a power source voltage electrode pad, and a writing electrode pad for writing the temperature compensation data are arranged in a matrix configuration of m rows×n columns (wherein m and n are natural numbers not smaller than 2) in an IC element mounting area on a bottom surface of the cavity; and    the IC element has a plurality of connection pads provided on a lower surface thereof and electrically connected to the corresponding electrode pads.    
   
   
       11 . A temperature-compensated crystal oscillator according to  claim 10 , wherein at least one of the electrode pads arranged in the IC element mounting area on the bottom surface of the cavity is a dummy electrode pad bonded to a corresponding one of the connection pads of the IC element.  
   
   
       12 . A temperature-compensated crystal oscillator according to  claim 10 , wherein the electrode pads are arranged at a predetermined pitch linearly in the rows and in the columns, and the respective rows extend perpendicularly to the respective columns.  
   
   
       13 . A temperature-compensated crystal oscillator according to  claim 10 , wherein the mounting base comprises at least two laminated insulative layers and an interconnection conductor provided between the two insulative layers and connected to a via-hole conductor disposed just below or above a predetermined one of the electrode pads.  
   
   
       14 . A temperature-compensated crystal oscillator according to  claim 13 , wherein the natural numbers m and n are not smaller than 3, and the electrode pad connected to the interconnection conductor via the via-hole conductor is surrounded by the other electrode pads.  
   
   
       15 . A temperature-compensated crystal oscillator according to  claim 10 , wherein the IC element comprises a semiconductor device and a re-interconnection layer provided on a main surface of the semiconductor device for associating the connection pads of the IC element with electrode pad positions.