Semiconductor capacitor structure and method to form same

Abstract

A semiconductor capacitor structure comprising sidewalls of conductive hemispherical grained material, a base of metal silicide material, and a metal nitride material overlying the conductive hemispherical grained material and the metal silicide material. The semiconductor capacitor structure is fabricated by forming a base of metal silicide material along the sidewalls of an insulative material having an opening therein, forming sidewalls of conductive hemispherical grained material on the metal silicide material, and forming a metal nitride material overlying the conductive hemispherical grained material and the metal silicide material.

1 . A method to form a capacitor plate structure for a semiconductor device comprising the steps of: 
 forming a metal material on the base of an opening in an insulative material;    forming conductive hemispherical grained polysilicon on said base and on sidewalls of said insulative material defining said opening;    converting said metal material and said conductive hemispherical grained polysilicon at the bottom of the container structure to metal silicide;    forming a metal nitride material overlying said conductive hemispherical grained material and said metal silicide material.    
   
   
       2 . The method of  claim 1 , wherein said step of converting comprises subjecting titanium material and said conductive hemispherical grained polysilicon to a temperature of approximately 600° C.  
   
   
       3 . The method of  claim 1 , wherein said step of converting comprises subjecting a nickel material and said conductive hemispherical grained polysilicon to a temperature of approximately 400° C. to 500° C.  
   
   
       4 . The method of  claim 1 , wherein said metal silicide material comprises a metal selected from a group consisting of cobalt, tungsten, nickel and titanium.  
   
   
       5 . A method to form a capacitor structure for a semiconductor device comprising the steps of: 
 forming a metal material on the base of an opening in an insulative material;    forming conductive hemispherical grained polysilicon on said base and on sidewalls of said insulative material defining said opening;    converting said metal material and said conductive hemispherical grained polysilicon at the bottom of the container structure to metal silicide;    forming a metal nitride material overlying said conductive hemispherical grained material and said metal silicide material to form a first capacitor plate comprising said metal silicide and said metal nitride material;    forming a capacitor dielectric overlying said metal nitride material; and    forming a conductive material overlying said capacitor dielectric to form a second capacitor plate.    
   
   
       6 . The method of  claim 5 , wherein said step of converting comprises subjecting titanium material and said conductive hemispherical grained polysilicon to a temperature of approximately 600° C.  
   
   
       7 . The method of  claim 5 , wherein said step of converting comprises subjecting a nickel material and said conductive hemispherical grained polysilicon to a temperature of approximately 400° C. to 500° C.  
   
   
       8 . The method of  claim 5 , wherein said step of forming a metal material comprises forming a metal selected from a group consisting of cobalt, tungsten, nickel and titanium.  
   
   
       9 . The method of  claim 5 , wherein said step of forming a metal nitride material comprises forming a material selected from the group consisting of titanium nitride, tantalum nitride and tungsten nitride.  
   
   
       10 . A method to form a capacitor plate structure for a semiconductor device comprising the steps of: 
 forming a titanium material on the base of an opening in an insulative material;    forming conductive hemispherical grained polysilicon on said base and on sidewalls of said insulative material defining said opening;    converting said titanium material and said conductive hemispherical grained polysilicon at the bottom of the container structure to titanium silicide;    forming a titanium nitride material overlying said conductive hemispherical grained material and said titanium silicide material.    
   
   
       11 . The method of  claim 10 , wherein said step of converting comprises subjecting said titanium material and said conductive hemispherical grained polysilicon to a temperature of approximately 600° C.  
   
   
       12 . A method to form a capacitor structure for a semiconductor device comprising the steps of: 
 forming a titanium material on the base of an opening in an insulative material;    forming conductive hemispherical grained polysilicon on said base and on sidewalls of said insulative material defining said opening;    converting said titanium material and said conductive hemispherical grained polysilicon at the bottom of the container structure to titanium silicide;    forming a titanium nitride material overlying said conductive hemispherical grained material and said titanium silicide material to form a first capacitor plate comprising said titanium silicide and said titanium nitride material;    forming a capacitor dielectric overlying said titanium nitride material; and    forming a conductive material overlying said capacitor dielectric to form a second capacitor plate.    
   
   
       13 . The method of  claim 12 , wherein said step of converting comprises subjecting said titanium material and said conductive hemispherical grained polysilicon to a temperature of approximately 600° C.  
   
   
       14 . A method to form a capacitor structure for a semiconductor device comprising the steps of: 
 forming a nickel material on the base of an opening in an insulative material;    forming conductive hemispherical grained polysilicon on said base and on sidewalls of said insulative material defining said opening;    converting said nickel material and said conductive hemispherical grained polysilicon at the bottom of the container structure to nickel silicide;    forming a titanium nitride material overlying said conductive hemispherical grained material and said nickel silicide material to form a first capacitor plate comprising said nickel silicide and said titanium nitride material;    forming a capacitor dielectric overlying said titanium nitride material; and    forming a conductive material overlying said capacitor dielectric to form a second capacitor plate.    
   
   
       15 . The method of  claim 14 , wherein said step of converting comprises subjecting said nickel material and said conductive hemispherical grained polysilicon to a temperature of approximately 400° C. to 500° C.  
   
   
       16 . A method of forming a capacitor structure during semiconductor fabrication comprising the steps of: 
 forming a recessed region into an insulative material, said recessed region having sidewalls and a base, said base providing access to an underlying conductive plug connected to a source/drain region of a transistor;    forming a titanium layer on said sidewalls said and on a base region of said insulative material in contact with said underlying conductive plug;    forming conductive hemispherical grained polysilicon material on said titanium layer;    converting said hemispherical polysilicon material and said titanium layer at said base region to a titanium silicide material;    forming a titanium nitride material overlying said conductive hemispherical grained polysilicon material and said titanium silicide material to form a first capacitor plate;    forming a capacitor dielectric overlying said titanium nitride material; and    forming a conductive polysilicon material overlying said capacitor dielectric to form a second capacitor plate.    
   
   
       17 . The method of  claim 16 , wherein said step of converting comprises subjecting said titanium layer and said conductive hemispherical grained polysilicon to a temperature of approximately 600° C.  
   
   
       18 . A method of forming a capacitor structure during semiconductor fabrication comprising the steps of: 
 forming a recessed region into an insulative material, said recessed region having sidewalls and a base, said base providing access to an underlying conductive plug connected to a source/drain region of a transistor;    forming a nickel layer on said sidewalls said and on a base region of said insulative material in contact with said underlying conductive plug;    forming conductive hemispherical grained polysilicon material on said nickel layer;    converting said hemispherical polysilicon material and said nickel layer at said base region to a nickel silicide material;    forming a titanium nitride material overlying said conductive hemispherical grained polysilicon material and said nickel silicide material to form a first capacitor plate;    forming a capacitor dielectric overlying said titanium nitride material; and    forming a conductive polysilicon material overlying said capacitor dielectric to form a second capacitor plate.    
   
   
       19 . The method of  claim 18 , wherein said step of converting comprises subjecting said nickel material and said conductive hemispherical grained polysilicon to a temperature of approximately 400° C. to 500° C.  
   
   
       20 . A method to form a semiconductor device having a capacitor plate structure comprising the steps of: 
 forming a metal material on the base of an opening in an insulative material;    forming conductive hemispherical grained polysilicon on said base and on sidewalls of said insulative material defining said opening;    converting said metal material and said conductive hemispherical grained polysilicon at the bottom of the container structure to metal silicide;    forming a metal nitride material overlying said conductive hemispherical grained material and said metal silicide material.    
   
   
       21 . The method of  claim 20 , wherein said step of converting comprises subjecting titanium material and said conductive hemispherical grained polysilicon to a temperature of approximately 600° C.  
   
   
       22 . The method of  claim 20 , wherein said step of converting comprises subjecting a nickel material and said conductive hemispherical grained polysilicon to a temperature of approximately 400° C.-500° C.  
   
   
       23 . The method of  claim 20 , wherein said metal silicide material comprises a metal selected from a group consisting of cobalt, tungsten, nickel and titanium.  
   
   
       24 . A method to form a semiconductor device having a capacitor structure comprising the steps of: 
 forming a metal material on the base of an opening in an insulative material;    forming conductive hemispherical grained polysilicon on said base and on sidewalls of said insulative material defining said opening;    converting said metal material and said conductive hemispherical grained polysilicon at the bottom of the container structure to metal silicide;    forming a metal nitride material overlying said conductive hemispherical grained material and said metal silicide material to form a first capacitor plate comprising said metal silicide and said metal nitride material;    forming a capacitor dielectric overlying said metal nitride material; and    forming a conductive material overlying said capacitor dielectric to form a second capacitor plate.    
   
   
       25 . The method of  claim 24 , wherein said step of converting comprises subjecting titanium material and said conductive hemispherical grained polysilicon to a temperature of approximately 600° C.  
   
   
       26 . The method of  claim 24 , wherein said step of converting comprises subjecting a nickel material and said conductive hemispherical grained polysilicon to a temperature of approximately 400° C. to 500° C.  
   
   
       27 . The method of  claim 24 , wherein said step of forming a metal material comprises forming a metal selected from a group consisting of cobalt, tungsten, nickel and titanium.  
   
   
       28 . The method of  claim 24 , wherein said step of forming a metal nitride material comprises forming a material selected from the group consisting of titanium nitride, tantalum nitride and tungsten nitride.  
   
   
       29 . A method to form a semiconductor device having a capacitor plate structure comprising the steps of: 
 forming a titanium material on the base of an opening in an insulative material;    forming conductive hemispherical grained polysilicon on said base and on sidewalls of said insulative material defining said opening;    converting said titanium material and said conductive hemispherical grained polysilicon at the bottom of the container structure to titanium silicide;    forming a titanium nitride material overlying said conductive hemispherical grained material and said titanium silicide material.    
   
   
       30 . The method of  claim 29 , wherein said step of converting comprises subjecting said titanium material and said conductive hemispherical grained polysilicon to a temperature of approximately 600° C.  
   
   
       31 . A method to form a semiconductor device having a capacitor structure comprising the steps of: 
 forming a titanium material on the base of an opening in an insulative material;    forming conductive hemispherical grained polysilicon on said base and on sidewalls of said insulative material defining said opening;    converting said titanium material and said conductive hemispherical grained polysilicon at the bottom of the container structure to titanium silicide;    forming a titanium nitride material overlying said conductive hemispherical grained material and said titanium silicide material to form a first capacitor plate comprising said titanium silicide and said titanium nitride material;    forming a capacitor dielectric overlying said titanium nitride material; and    forming a conductive material overlying said capacitor dielectric to form a second capacitor plate.    
   
   
       32 . The method of  claim 31 , wherein said step of converting comprises subjecting said titanium material and said conductive hemispherical grained polysilicon to a temperature of approximately 600° C.  
   
   
       33 . A method to form a semiconductor device having a capacitor structure comprising the steps of: 
 forming a nickel material on the base of an opening in an insulative material;    forming conductive hemispherical grained polysilicon on said base and on sidewalls of said insulative material defining said opening;    converting said nickel material and said conductive hemispherical grained polysilicon at the bottom of the container structure to nickel silicide;    forming a titanium nitride material overlying said conductive hemispherical grained material and said nickel silicide material to form a first capacitor plate comprising said nickel silicide and said titanium nitride material;    forming a capacitor dielectric overlying said titanium nitride material; and    forming a conductive material overlying said capacitor dielectric to form a second capacitor plate.    
   
   
       34 . The method of  claim 33 , wherein said step of converting comprises subjecting said nickel material and said conductive hemispherical grained polysilicon to a temperature of approximately 400° C. to 500° C.  
   
   
       35 . A method of forming a semiconductor device having a capacitor structure comprising the steps of: 
 forming a recessed region into an insulative material, said recessed region having sidewalls and a base, said base providing access to an underlying conductive plug connected to a source/drain region of a transistor;    forming a titanium layer on said sidewalls said and on a base region of said insulative material in contact with said underlying conductive plug;    forming conductive hemispherical grained polysilicon material on said titanium layer;    converting said hemispherical polysilicon material and said titanium layer at said base region to a titanium silicide material;    forming a titanium nitride material overlying said conductive hemispherical grained polysilicon material and said titanium silicide material to form a first capacitor plate;    forming a capacitor dielectric overlying said titanium nitride material; and    forming a conductive polysilicon material overlying said capacitor dielectric to form a second capacitor plate.    
   
   
       36 . The method of  claim 35 , wherein said step of converting comprises subjecting said titanium layer and said conductive hemispherical grained polysilicon to a temperature of approximately 600° C.  
   
   
       37 . A method of forming a semiconductor device having a capacitor structure comprising the steps of: 
 forming a recessed region into an insulative material, said recessed region having sidewalls and a base, said base providing access to an underlying conductive plug connected to a source/drain region of a transistor;    forming a nickel layer on said sidewalls said and on a base region of said insulative material in contact with said underlying conductive plug;    forming conductive hemispherical grained polysilicon material on said nickel layer;    converting said hemispherical polysilicon material and said nickel layer at said base region to a nickel silicide material;    forming a titanium nitride material overlying said conductive hemispherical grained polysilicon material and said nickel silicide material to form a first capacitor plate;    forming a capacitor dielectric overlying said titanium nitride material; and    forming a conductive polysilicon material overlying said capacitor dielectric to form a second capacitor plate.    
   
   
       38 . The method of  claim 37 , wherein said step of converting comprises subjecting said nickel material and said conductive hemispherical grained polysilicon to a temperature of approximately 400° C. to 500° C.