Metal film semiconductor device and a method for forming the same

Abstract

A method for forming a metal film including forming a metal barrier layer on a surface of a substrate, on a bottom surface of a recess and on sidewalls of the recess, forming a first metal film on the substrate but not in the recess, treating the first metal film with nitrogen plasma to form an insulation film including nitrogen, forming a second metal film on a portion of the metal barrier layer in the recess, and forming a third metal film on the substrate, the recess and the insulation film.

1 . A semiconductor device, comprising: 
 a metal barrier layer formed in a recess of a substrate;    an insulation film formed on a portion of the metal barrier layer but not in the recess;    a metal film formed only on a portion of the metal barrier layer in the recess; and    another metal film formed on the substrate.    
   
   
       2 . The semiconductor device of  claim 1 , wherein the insulation film is formed by treating a metal film with nitrogen plasma.  
   
   
       3 . The semiconductor device of  claim 1 , wherein the metal barrier layer is formed on the substrate.  
   
   
       4 . The semiconductor device of  claim 1 , wherein the another metal film is formed on the substrate, the recess and the insulation film.  
   
   
       5 . A method of forming a semiconductor device, comprising: 
 forming a metal barrier layer in a recess of a substrate;    forming an insulation film on a portion of the metal barrier layer but not in the recess;    forming a metal film only on a portion of the metal barrier layer in the recess; and    forming another metal film on the substrate.    
   
   
       6 . The method of  claim 5 , wherein the insulation film is formed by treating a metal film with a nitrogen plasma treatment.  
   
   
       7 . The method of  claim 5 , wherein the another metal film is formed on the substrate, the recess and the insulation film.  
   
   
       8 . The device of  claim 1 , wherein said recess further comprises: 
 a portion of the metal barrier layer not in the recess and extending beyond a periphery of the substrate.    
   
   
       9 . The device of  claim 1 , wherein said recess further comprises: 
 a portion of the metal barrier layer not in the recess and extending beyond a periphery of the substrate; and    a portion of the insulation film extending beyond a periphery of the metal barrier layer.    
   
   
       10 . The method of  claim 5 , wherein said recess further includes a portion of the metal barrier layer not in the recess and extending beyond a periphery of the substrate.  
   
   
       11 . The method of  claim 5 , wherein said recess further includes a portion of the metal barrier layer not in the recess and extending beyond a periphery of the substrate and a portion of the insulation film extending beyond a periphery of the metal barrier layer.