Interconnecting structure with dummy vias

Abstract

First wirings and first dummy wirings are in a p-SiOC film on a substrate. A p-SiOC film is formed, and a cap film is formed on the p-SiOC film. A dual damascene wiring, including vias connected to the first wirings and the second wirings, is formed in the cap film and the p-SiOC film 22. Dummy vias are formed on the periphery of isolated vias.

1 . An interconnecting structure comprising: 
 first wirings on a substrate;    a low-k dielectric film on the first wirings, the low-k dielectric film having a dielectric constant not exceeding 3;    vias in the low-k dielectric film and connected to the first wiring;    second wirings on the vias and connected to the vias; and    dummy vias on the periphery of an isolated via of the vias.    
   
   
       2 . The interconnecting structure according to  claim 1 , further comprising a cap film on the low-k dielectric film, wherein the second wirings are in the cap film and the low-k dielectric film.  
   
   
       3 . The interconnecting structure according to  claim 1 , further comprising: 
 first dummy wirings on the periphery of the first wirings; and    second dummy wirings on the periphery of the second wirings, wherein the dummy vias is connected to the first and second dummy wirings, and one of the first and second dummy wirings connected to the dummy vias are connected to ground potential.    
   
   
       4 . The interconnecting structure according to  claim 1 , wherein the dummy vias have a slit shape.  
   
   
       5 . The interconnecting structure according to  claim 1 , wherein the dummy vias have a dimension 1 to 10 times a minimum dimension of the vias.