Device and method for protecting gate terminal and lead

Abstract

A resist region covering the gate terminal and lead of the gate electrode line and between a passivation layer and a gate insulating layer is used to protect the gate terminal and lead. The resist region is located at a scribing line on margin of the color filter substrate of a panel, thereby the resist region can protect the passivation layer and the gate insulating layer from cracking, and the gate terminal and the lead from corrosion after a portion of the color filter substrate is removed along the scribing line.

1 . A device for protecting a gate terminal and lead of a gate electrode line at stage of scribing and spalling a liquid crystal display panel, said liquid crystal display panel comprising a first substrate with thin film transistor array thereon and a second substrate thereon with color filter opposite to said thin film transistor array, said device comprising: 
 a resist region covering said gate terminal and said lead of the gate electrode line and between a passivation layer and a gate insulating layer, said resist region located at a scribing line on margin of the second substrate of the panel.    
   
   
       2 . The device according to  claim 1 , wherein material of said resist region is metal.  
   
   
       3 . The device according to  claim 2 , wherein said resist region is a floating region.  
   
   
       4 . The device according to  claim 2 , wherein material of said resist region is the same as source/drain electrodes of the thin film transistor.  
   
   
       5 . The device according to  claim 4 , wherein said resist region is formed by a step of said source/drain electrodes.  
   
   
       6 . The device according to  claim 5 , wherein said resist region is formed by steps comprising: 
 providing said array substrate with a gate electrode and said gate electrode line thereon, and said gate insulating layer covering said gate electrode, said gate electrode line, and said array substrate;    forming an island semiconductor layer on said gate insulating layer and over said gate electrode;    depositing a blanket metal layer on said island semiconductor layer and said gate insulating layer;    performing a lithographic process to said conductive layer by using a reticle with a source pattern and a drain pattern on said gate electrode and a resist region pattern on said gate terminal and said lead; and    etching said conductive layer to form said source/drain electrodes and said resist region.    
   
   
       7 . The device according to  claim 1 , wherein material of said resist region is the same as island semiconductor layer of the thin film transistor.  
   
   
       8 . The device according to  claim 7 , wherein said resist region is formed by a step of formation of said island semiconductor layer.  
   
   
       9 . The device according to  claim 8 , wherein said resist region is formed by steps comprising: 
 providing said array substrate with a gate electrode and said gate electrode line thereon, said gate insulating layer blanket on said gate electrode, said gate electrode line, and said array substrate;    depositing a blanket semiconductor layer on said gate insulating layer;    performing a lithographic process to said semiconductor layer by using a reticle with an island pattern on said gate electrode and a resist region pattern on said gate terminal and said lead; and    etching said semiconductor layer to form said island semiconductor layer and said resist region.    
   
   
       10 . The device according to  claim 1 , wherein activity of said resist region is less than said gate electrode line.  
   
   
       11 . The device according to  claim 1 , wherein distance between said scribing line and margin of said resist region is about more than 50 μm.  
   
   
       12 . The device according to  claim 11 , wherein width of said resist region is larger than said gate terminal and said gate electrode line.  
   
   
       13 . A method for protecting a gate terminal and lead at stage of scribing and spalling a liquid crystal panel, said method comprising: 
 providing a first substrate;    forming the gate electrode and the gate electrode line on said first substrate, wherein said gate electrode line comprises said gate terminal and said lead;    depositing a blanket gate insulating layer on said gate electrode, said gate electrode line, and said substrate;    forming an island semiconductor layer on said gate electrode and a source electrode and a drain electrode on said island semiconductor layer, and simultaneously forming a resist region on said gate insulating layer and covering said gate terminal and said lead of a gate electrode line, said resist region located at a scribing line on margin of a second substrate with color filter thereon;    depositing a blanket passivation layer on said source electrode, said drain electrode, and said resist region.    
   
   
       14 . The method according to  claim 13 , wherein said resist region is formed of metal.  
   
   
       15 . The method according to  claim 14 , wherein said resist region is floating.  
   
   
       16 . The method according to  claim 15 , wherein said step of formation said floating metal resist region is at a step of formation of said source electrode and said drain electrode.  
   
   
       17 . The method according to  claim 16 , wherein formation of said floating metal resist region comprises: 
 forming an island semiconductor layer on said gate insulating layer and over said gate electrode;    depositing a blanket metal layer on said island semiconductor layer and said gate insulating layer;    performing a lithographic process to said conductive layer by using a reticle with a source pattern and a drain pattern on said gate electrode and a resist region pattern on said gate terminal and said lead; and    etching said conductive layer to form said source electrode, said drain electrode and said floating metal resist region.    
   
   
       18 . The method according to  claim 15 , wherein activity of said floating metal resist region is less than said gate electrode line.  
   
   
       19 . The method according to  claim 15 , wherein distance between said scribing line and margin of said floating metal resist region is about more than 50 μm.  
   
   
       20 . The method according to  claim 19 , wherein width of said floating metal resist region is larger than said gate terminal and said gate electrode line.