Susceptor and surface processing method

Abstract

A susceptor provided as a base of a liquid crystal substrate in a vacuum chamber of a thin film deposition apparatus is provided. The susceptor includes a susceptor main body and a stepped portion provided on the susceptor main body to support the substrate from the bottom. The stepped portion is formed of a size smaller than the substrate. By the provision of the stepped portion, conduction between a film formed at an end plane of the substrate and a film formed at the portion around the substrate can be avoided.

1 . A susceptor provided as a base of a substrate within a vacuum chamber in a thin film deposition apparatus, comprising: 
 a susceptor main body, and    a stepped portion provided on said susceptor main body to support said substrate from the bottom, having a size smaller than said substrate.    
   
   
       2 . The susceptor of  claim 1 , wherein the stepped portion has a size m×n and the substrate has a size M×N, the substrate size M×N is 400×500 mm, and the difference between M and m (M−m) and the difference between N and n (N−n) is 8 mm to 12 mm.  
   
   
       3 . The susceptor of  claim 1 , wherein the stepped portion has a size m×n and the substrate has a size M×N, the substrate size M×N is 400×500 mm, and the difference between M and m (M−m) and the difference between N and n (N−n) is about 10 mm.  
   
   
       4 . The susceptor of  claim 2 , wherein the stepped portion has a height of 2 mm to 4 mm.  
   
   
       5 . The susceptor of  claim 3 , wherein the stepped portion has a height of 2 mm to 4 mm.  
   
   
       6 . The susceptor of  claim 1 , wherein the susceptor is formed of glass.