US2005031866A1PendingUtilityA1
Silicon carbide fiber having boron nitride layer in fiber surface and process for the production thereof
Priority: Oct 3, 2001Filed: Jan 6, 2004Published: Feb 10, 2005
Est. expiryOct 3, 2021(expired)· nominal 20-yr term from priority
D01F 9/10C04B 35/80C04B 35/571C04B 35/62868C04B 2235/75C04B 2235/5244C04B 2235/483C04B 2235/5264C04B 2235/5252C04B 2235/3232Y10T428/2933
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Claims
Abstract
A silicon carbide fiber having a boron nitride layer in a fiber surface and having the following properties of a to c, a. the existent ratio of boron slopingly increases towards the surface of the fiber, b. the existent ratio of boron in the region of from the fiber surface to a depth of 500 nm is 0.5 to 1.5% by weight, c. the existent ratio of boron in a fiber central portion which is a region of a depth of at least 3 μm below the fiber surface is 0 to 0.2% by weight, and a process for the production thereof.
Claims
exact text as granted — not AI-modified1 . A silicon carbide fiber having a boron nitride layer in a fiber surface and having the following properties of a to c,
a. the existent ratio of boron slopingly increases towards the surface of the fiber, b. the existent ratio of boron in the region of from the fiber surface to a depth of 500 nm is 0.5 to 1.5% by weight, c. the existent ratio of boron in a fiber central portion which is a region of a depth of at least 3 μm below the fiber surface is 0 to 0.2% by weight.
2 . A silicon carbide fiber according to claim 1 , wherein the existent ratio of boron is 0.2 to 1.5% by weight based on the fiber as a whole.
3 . A silicon carbide fiber according to claim 1 , which is formed of a composite phase comprising a silicon carbide phase and a boron nitride phase.
4 . A silicon carbide fiber according to claim 3 , wherein the amount of the silicon carbide phase is 97% by weight or more based on the fiber as a whole.
5 . A silicon carbide fiber according to claim 1 , wherein a layer in which the existent ratio of the boron slopingly increases exists in the range of from 5 to 500 nm below the surface of the fiber.
6 . A process for the production of a silicon carbide fiber recited in claim 1 , which process comprises
melt-spinning a modified polycarbosilane obtainable by modifying a polycarbosilane having a main chain structure represented by the formula, (in which R is a hydrogen atom, a lower alkyl group or a phenyl group) and a number average molecular weight of 200 to 7,000, with an organic boron compound or melt-spinning a mixture of the modified polycarbosilane and an organic boron compound, to obtain a spun fiber; infusibilizing the spun fiber; and sintering the infusible fiber in a nitrogen-containing atmosphere.
7 . A process according to claim 6 , wherein the organic boron compound is a compound having a basic structure of the formula B (OR′) n or the formula BR″m, in which R′ is an alkyl group having 1 to 20 carbon atoms or a phenyl group, R″ is acetyl acetonate, and each of m and n is an integer of more than 1.
8 . A process according to claim 6 , wherein at least part of silicon atoms of the polycarbosilane bond to metal atoms selected from the group consisting of Ti, Zr, Hf, Al, V, Mg and Y directly or through oxygen atoms.
9 . A process according to claim 6 , wherein the organic boron compound bonds to the polycarbosilane as a mono functional polymer.Join the waitlist — get patent alerts
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