US2005031784A1PendingUtilityA1

Barrier layer for electroplating processes

44
Priority: Aug 16, 1999Filed: Sep 1, 2004Published: Feb 10, 2005
Est. expiryAug 16, 2019(expired)· nominal 20-yr term from priority
Inventors:Peijun DingTony P. ChiangTse-Yong YaoBarry Chin
H10P 14/47H10W 20/0526H10W 20/056H10W 20/043H10W 20/033H10W 20/035C25D 3/00
44
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Claims

Abstract

The invention generally provides a method for preparing a surface for electrochemical deposition comprising forming a high conductance barrier layer on the surface and depositing a seed layer over the high conductance barrier layer. Another aspect of the invention provides a method for filling a structure on a substrate, comprising depositing a high conductance barrier layer on one or more surfaces of the structure, depositing a seed layer over the barrier layer, and electrochemically depositing a metal to fill the structure.

Claims

exact text as granted — not AI-modified
1 . A method of forming a high conductance barrier layer, comprising: 
 depositing a first barrier layer to a thickness less than about 250 Å over a surface using chemical vapor deposition; and    depositing a second barrier layer to a thickness less than about 250 Å over the first barrier layer using physical vapor deposition, wherein the second barrier layer comprises a material selected from the group consisting of tantalum, tantalum nitride, and combinations thereof, wherein the first barrier layer and the second barrier layer form a high conductance barrier layer having a resistivity of less than about 160 μΩ-cm.    
     
     
         2 . The method of  claim 1 , wherein depositing a second barrier comprises depositing the second barrier layer utilizing high density plasma physical vapor deposition.  
     
     
         3 . The method of  claim 2 , wherein the second barrier layer is deposited at a substrate temperature less than about 600° C.  
     
     
         4 . The method of  claim 2 , wherein the second barrier layer is deposited at a processing pressure less than about 100 mTorr.  
     
     
         5 . The method of  claim 2 , wherein the second barrier layer is deposited at a substrate temperature less than about 600° C. and at a processing pressure less than about 100 mTorr.  
     
     
         6 . A method of preparing a surface for electrochemical deposition, comprising: 
 forming a high conductance barrier layer having a resistivity of less than about 160 μΩ-cm on the surface by forming a first barrier layer over the surface using chemical vapor deposition and by forming a second barrier layer over the first barrier layer using physical vapor deposition, wherein the second barrier layer is deposited at a processing pressure less than about 100 mTorr; and    depositing a copper seed layer over the high conductance barrier layer utilizing high density plasma physical vapor deposition.    
     
     
         7 . The method of  claim 6 , wherein the seed layer is deposited to a bottom film thickness less than about 1,500 Å.  
     
     
         8 . The method of  claim 6 , wherein the seed layer is deposited to a bottom film thickness greater than about 250 Å.  
     
     
         9 . The method of  claim 8 , wherein the seed layer is deposited to a sidewall film thickness less than about 250 Å.  
     
     
         10 . The method of  claim 6 , wherein the high conductance barrier layer comprises a material selected from the group consisting of tungsten, tungsten nitride, titanium, titanium nitride, and combinations thereof.  
     
     
         11 . The method of  claim 6 , wherein the high conductance barrier layer comprises a multi-layered stack of one or more materials selected from the group consisting of tungsten, tungsten nitride, titanium, titanium nitride, and combinations thereof.  
     
     
         12 . The method of  claim 6 , wherein forming a second barrier layer comprises: 
 depositing a layer comprising tantalum; and    annealing the layer at a temperature between about 350° C. and about 600° C. for between about 30 seconds and about 30 minutes.    
     
     
         13 . The method of  claim 12 , wherein annealing the layer comprises annealing the layer at a temperature between about 450° C. and about 500° C.  
     
     
         14 . The method of  claim 6 , wherein forming a high conductance barrier layer comprises depositing a layer comprising tantalum at a deposition temperature less than about 600° C.  
     
     
         15 . The method of  claim 6 , wherein forming a high conductance barrier layer comprises depositing a layer comprising tantalum utilizing high density plasma physical vapor deposition.  
     
     
         16 . The method of  claim 15 , wherein the layer is deposited at a substrate temperature less than about 600° C.  
     
     
         17 . The method of  claim 15 , wherein the layer is deposited at a substrate temperature between about 350° C. and about 600° C. and at a processing pressure between about 20 mTorr and about 100 mTorr.  
     
     
         18 . The method of  claim 6 , wherein the first barrier layer comprises a material selected from the group consisting of titanium nitride, tungsten, tungsten nitride, and combinations thereof.  
     
     
         19 . The method of  claim 6 , wherein the second barrier layer comprises a material selected from the group consisting of tantalum, tantalum nitride, and combinations thereof.  
     
     
         20 . A method of forming a high conductance barrier layer, comprising: 
 depositing a first barrier layer to a thickness less than about 250 Å so as to provide a conformal barrier layer over a surface; and    depositing a second barrier layer to a thickness less than about 250 Å over the first barrier layer using physical vapor deposition, wherein the second barrier layer comprises a material selected from the group consisting of tantalum, tantalum nitride, and combinations thereof, wherein the first barrier layer and the second barrier layer form a high conductance barrier layer having a resistivity of less than about 160 μΩ-cm.    
     
     
         21 . The method of  claim 20 , wherein the second barrier layer is deposited at a substrate temperature less than about 600° C.  
     
     
         22 . The method of  claim 20 , wherein the second barrier layer is deposited at a processing pressure less than about 100 mTorr.  
     
     
         23 . The method of  claim 20 , wherein the second barrier layer is deposited at a substrate temperature less than about 600° C. and at a processing pressure less than about 100 mTorr.  
     
     
         24 . A method of preparing a surface for electrochemical deposition, comprising: 
 forming a high conductance barrier layer having a resistivity of less than about 160 μΩ-cm on the surface by depositing a first barrier layer so as to provide a conformal barrier layer over the surface and by depositing a second barrier layer over the first barrier layer using physical vapor deposition, wherein the second barrier layer is deposited at a processing pressure less than about 100 mTorr; and    depositing a copper seed layer over the high conductance barrier layer utilizing high density plasma physical vapor deposition.    
     
     
         25 . The method of  claim 24 , wherein the seed layer is deposited to a bottom film thickness less than about 1,500 Å.  
     
     
         26 . The method of  claim 25 , wherein the seed layer is deposited to a sidewall film thickness less than about 250 Å.  
     
     
         27 . The method of  claim 24 , wherein the high conductance barrier layer comprises a material selected from the group consisting of tungsten, tungsten nitride, titanium, titanium nitride, and combinations thereof.  
     
     
         28 . The method of  claim 24 , wherein depositing a second barrier layer comprises: 
 depositing a layer comprising tantalum; and    annealing the layer at a temperature between about 350° C. and about 600° C. for between about 30 seconds and about 30 minutes.    
     
     
         29 . The method of  claim 28 , wherein annealing the layer comprises annealing the layer at a temperature between about 450° C. and about 500° C.  
     
     
         30 . The method of  claim 24 , wherein forming a high conductance barrier layer comprises depositing a layer comprising tantalum at a deposition temperature less than about 600° C.  
     
     
         31 . The method of  claim 24 , wherein forming a high conductance barrier layer comprises depositing a layer comprising tantalum utilizing high density plasma physical vapor deposition.  
     
     
         32 . The method of  claim 31 , wherein the layer is deposited at a substrate temperature less than about 600° C.  
     
     
         33 . The method of  claim 31 , wherein the layer is deposited at a substrate temperature between about 350° C. and about 600° C. and at a processing pressure between about 20 mTorr and about 100 mTorr.  
     
     
         34 . The method of  claim 24 , wherein the first barrier layer comprises a material selected from the group consisting of titanium nitride, tungsten, tungsten nitride, and combinations thereof.  
     
     
         35 . The method of  claim 24 , wherein the second barrier layer comprises a material selected from the group consisting of tantalum, tantalum nitride, and combinations thereof.  
     
     
         36 . A method of forming a high conductance barrier layer, comprising: 
 depositing a first barrier layer to a thickness less than about 250 Å so as to provide a conformal barrier layer over a surface; and    depositing a second barrier layer to a thickness less than about 250 Å over the first barrier layer using chemical vapor deposition or physical vapor deposition, wherein the second barrier layer comprises a material selected from the group consisting of tungsten, tungsten nitride, and combinations thereof, wherein the first barrier layer and the second barrier layer form a high conductance barrier layer having a resistivity of less than about 160 μΩ-cm.    
     
     
         37 . The method of  claim 36 , wherein the first barrier layer is deposited using chemical vapor deposition.  
     
     
         38 . A method of preparing a surface for electrochemical deposition, comprising: 
 depositing a first barrier layer to a thickness less than about 250 Å over a surface using chemical vapor deposition;    depositing a second barrier layer to a thickness less than about 250 Å over the first barrier layer using chemical vapor deposition or physical vapor deposition, wherein the second barrier layer comprises a material selected from the group consisting of tungsten, tungsten nitride, titanium, titanium nitride, and combinations thereof, wherein the first barrier layer and the second barrier layer form a high conductance barrier layer having a resistivity of less than about 160 μΩ-cm; and    depositing a copper seed layer over the high conductance barrier layer utilizing high density plasma physical vapor deposition.    
     
     
         39 . The method of  claim 38 , wherein the seed layer is deposited to a bottom film thickness less than about 1500 Å.  
     
     
         40 . The method of  claim 39 , wherein the seed layer is deposited to a sidewall film thickness less than about 250 Å.

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