Phase change recording film having high electric resistance and sputtering target for forming phase change recording film

Abstract

A phase change recording film having a high electrical resistance is provided. The phase change recording film may have the following composition in atom %: 15 to 30% of Ge, 15 to 25% of Sb, a total of 0.1 to 13% of one or both of Al and Si, and the balance of Te and impurities. Also, a sputtering target is provided for forming a phase change recording film having a high electrical resistance. The sputtering target may have the same composition as described above for the phrase change recording film.

1 . A phase change recording film having a high electrical resistance, the phase change recording film comprising, by atom % 
 15 to 30% of Ge;    15 to 25% of Sb;    a total of 0.1 to 13% of one or both of Al and Si; and    the balance of Te and impurities.    
     
     
         2 . A phase change recording film according to  claim 1 , wherein the specific resistance is about 5×10 −2  to 5×10 1  Ω·cm.  
     
     
         3 . A sputtering target for forming the phase change recording film having a high electrical resistance, the sputtering target comprising: 
 to  30 % of Ge;    to  25 % of Sb;    a total of 0.1 to 13% of one or two elements selected from the group consisting essentially of Al and Si; and    the balance of Te and impurities.    
     
     
         4 . A phase change recording film having a high electrical resistance, the phase change recording film comprising, by atom % 
 15 to 30% of Ge;    15 to 30% of Sb;    0.2 to 8% of C; and    the balance of Te and impurities.    
     
     
         5 . A phase change recording film according to  claim 4 , wherein the specific resistance is about 5×10 −2  to 5×10 1  Ω·cm.  
     
     
         6 . A sputtering target for forming the phase change recording film having a high electrical resistance, the sputtering target comprising: 
 to  30 % of Ge;    to  30 % of Sb; 0.2 to 8% of C; and    the balance of Te and impurities.    
     
     
         7 . A phase change recording film having a high electrical resistance, the phase change recording film comprising, by atom % 
 15 to 30% of Ge;    15 to 30% of Sb;    0.2 to 12% of B; and    the balance of Te and impurities.    
     
     
         8 . A phase change recording film according to  claim 7 , wherein the specific resistance is about 5×10 −2  to 5×10 1  Ω·cm.  
     
     
         9 . A sputtering target for forming the phase change recording film having a high electrical resistance, the sputtering target comprising: 
 to  30 % of Ge;    to  30 % of Sb; 0.2 to 12% of B;    and the balance of Te and impurities.    
     
     
         10 . A sputtering target for forming the phase change recording film having a high electrical resistance, the sputtering target comprising: 
 to  30 % of Ge;    to  30 % of Sb;    a total of 0.1 to 10% of at least one or two elements selected from the group consisting essentially of Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, and the balance of Te and impurities.    
     
     
         11 . A phase change recording film having a high electrical resistance, the phase change recording film comprising: 
 to  30 % of Ge;    to  30 % of Sb;    a total of 0.1 to 10% of at least one or two elements selected from the group consisting essentially of Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; and    the balance of Te and impurities.    
     
     
         12 . A phase change recording film according to  claim 11 , wherein the specific resistance is 5×10 −2  to 5×10 1  Ω·cm.