Multi-chip semiconductor device with specific chip arrangement

Abstract

In a multi-chip-module type semiconductor device, first and second semiconductor elements, a main component of each of the semiconductor elements being semiconductor material to form a semiconductor electric circuit in each of the semiconductor elements, are mounted on and electrically connected to a substrate adapted to be mounted onto a mother board and to be electrically connected to the mother board so that the each of the semiconductor elements is electrically connected to the mother board through the substrate.

1 - 19 . (Canceled)  
   
   
       20 . A multi-chip-module type semiconductor device comprising: 
 first and second semiconductor elements, a main component of each of the semiconductor elements being semiconductor material to form a semiconductor electric circuit; and    a substrate adapted to be mounted onto a motherboard and to be electrically connected to the motherboard, to which the first and second semiconductor elements are electrically connected.    
   
   
       21 . A multi-chip-module type semiconductor device according to  claim 20 , further comprising a wiring layer disposed between the substrate and at least one of the first and second semiconductor elements, the wiring layer including a synthetic resin layer and an electrically conductive member extending in a transverse direction with respect to a stacking direction in which each of the first and second semiconductor elements and the substrate are stacked in such a manner that an electrical connecting point between the electrically conductive member and each semiconductor element is distal an electrical connecting point between the electrically conductive member and the substrate in the transverse direction.  
   
   
       22 . A multi-chip-module type semiconductor device according to  claim 20 , further comprising a synthetic resin member adhering to the first semiconductor element and the substrate at the inside of the first semiconductor element as seen in a stacking direction in which each of the first and second semiconductor elements and the substrate are stacked, while a synthetic resin whose Young's modulus is not less than Young's modulus of the synthetic resin member is prevented from adhering to the second semiconductor element and the substrate at the inside of the second semiconductor element as seen in the stacking direction, and a thickness of the first semiconductor element is smaller than a thickness of the second semiconductor element.  
   
   
       23 . A multi-chip-module type semiconductor device according to  claim 20 , further comprising a first synthetic resin through which the substrate and the first semiconductor element are connected to each other, and a second synthetic resin through which the substrate and the second semiconductor element are connected to each other, Young's modulus of the first synthetic resin is larger than Young's modulus of the second synthetic resin, and a thickness of the first semiconductor element is smaller than a thickness of the second semiconductor element.  
   
   
       24 . A multi-chip-module type semiconductor device according to  claim 20 , further comprising a first synthetic resin adhering to the substrate and the first semiconductor element at the inside of the first semiconductor element as seen in a stacking direction in which each of the first and second semiconductor elements and the substrate are stacked, and a second synthetic resin through which the second semiconductor element is connected to the substrate at the outside of the second semiconductor element as seen in the stacking direction while a synthetic resin whose Young's modulus is not less than Young's modulus of the first synthetic resin is prevented from adhering to the second semiconductor element and the substrate at the inside of the second semiconductor element as seen in the stacking direction, and a thickness of the first semiconductor element is smaller than a thickness of the second semiconductor element.  
   
   
       25 . A multi-chip-module type semiconductor device according to  claim 20 , wherein a main component of the first semiconductor element is Si, a main component of the second semiconductor element is GaAs, and a thickness of the second semiconductor element is smaller than a thickness of the first semiconductor element.  
   
   
       26 . A multi-chip-module type semiconductor device according to  claim 20 , wherein an area of the second semiconductor element is less than an area of the first semiconductor element as seen in a stacking direction in which each of the first and second semiconductor elements and the substrate are stacked, and a thickness of the second semiconductor element is less than a thickness of the first semiconductor element.  
   
   
       27 . A multi-chip-module type semiconductor device according to  claim 20 , wherein a length of a side of the second semiconductor element whose length is minimum in comparison with lengths of the other sides of the second semiconductor element as seen in a stacking direction in which each of the first and second semiconductor elements and the substrate are stacked is less than a length of a side of the first semiconductor element whose length is minimum in comparison with lengths of the other sides of the first semiconductor element as seen in the stacking direction, and a thickness of the second semiconductor element is less than a thickness of the first semiconductor element.  
   
   
       28 . A multi-chip-module type semiconductor device according to  claim 20 , further comprising a first synthetic resin through which the first semiconductor element is connected to the substrate, a second synthetic resin on which the second semiconductor element is supported, a first electrically conductive bump extending through the first synthetic resin to electrically connect the first semiconductor element to the substrate, and second electrically conductive bumps which support the second synthetic resin on the substrate and provide an electrical connection between the second semiconductor element and the substrate thereby defining a space that is bounded by two of the second electrically conductive bumps and by the second synthetic resin and the substrate, wherein a thickness of the first semiconductor element is smaller than a thickness of the second semiconductor element.  
   
   
       29 . A multi-chip-module type semiconductor device according to  claim 28 , wherein Young's modulus of the second synthetic resin is greater than Young's modulus of the first synthetic resin.  
   
   
       30 . A multi-chip-module type semiconductor device according to  claim 21 , wherein an area of the second semiconductor element is greater than an area of the first semiconductor element as seen in a stacking direction in which each of the first and second semiconductor elements and the substrate are stacked.  
   
   
       31 . A multi-chip-module type semiconductor device according to  claim 20 , further comprising a first synthetic resin element connecting the first semiconductor element to the substrate, a second synthetic resin element a first end of which supports the second semiconductor element and a second end of which is supported on the substrate at the outside of the second semiconductor element as seen in a stacking direction in which each of the first and second semiconductor elements and the substrate are stacked, a first electrically conductive bump extending though the first synthetic resin to electrically connect the first semiconductor element to the substrate, and second electrically conductive bumps which support the second end of the second synthetic resin element on the substrate and which provide an electrical connection between the second semiconductor element and the substrate, wherein a space is bounded by two of the second electrically conductive bumps and by the second end of the second synthetic resin element and the substrate, wherein a thickness of the first semiconductor element is smaller than a thickness of the second semiconductor element.  
   
   
       32 . A multi-chip-module type semiconductor device according to  claim 31 , wherein Young's modulus of the second synthetic resin is more than Young's modulus of the first synthetic resin.