Film substrate, semiconductor device, method of manufacturing film substrate, method of manufacturing semiconductor device and method of manufacturing circuit board with semiconductor device

Abstract

Disclosed is a film substrate comprising an insulative sheet including a first region to be separated, having a slit on an outer peripheral line of the first region, and on which a semiconductor device chip is to be mounted, and a conductive pattern formed on the insulative sheet, crossing the slit, and to be connected to an external terminal of the semiconductor device chip.

1 - 6 . (Canceled)  
   
   
       7 . A method of manufacturing a film substrate, comprising: 
 preparing an insulative sheet including a first region to be separated, and on which a semiconductor device chip is to be mounted;    forming a slit on an outer peripheral line of the first region of the insulative sheet; and    forming a conductive pattern crossing the slit and to be connected to an external terminal of the semiconductor device chip, on the insulative sheet.    
   
   
       8 . The method according to  claim 7 , wherein a width of the conductive pattern becomes narrow at a portion crossing the slit.  
   
   
       9 . The method according to  claim 7 , wherein forming the conductive pattern includes forming a conductive pattern, which crosses a slit on the outer peripheral line and is not to be connected to an external terminal of the semiconductor device chip, on the insulative sheet.  
   
   
       10 . A method of manufacturing a semiconductor device, comprising: 
 preparing an insulative sheet including a first region to be separated;    forming a slit on an outer peripheral line of the first region of the insulative sheet;    forming a conductive pattern crossing the slit, on the insulative sheet; and    mounting a semiconductor device chip on the insulative sheet to electrically connect an external terminal of the semiconductor device chip to the conductive pattern.    
   
   
       11 . The method according to  claim 10 , wherein a width of the conductive pattern becomes narrow at a portion crossing the slit.  
   
   
       12 . The method according to  claim 10 , wherein forming the conductive pattern includes forming a conductive pattern, which crosses a slit on the outer peripheral line and is not to be connected to an external terminal of the semiconductor device chip, on the insulative sheet.  
   
   
       13 . A method of manufacturing a circuit board with a semiconductor device, comprising: 
 preparing an insulative sheet including a first region to be separated and a second region on the outer side of the first region;    forming a slit on an outer peripheral line of the first region of the insulative sheet;    forming a conductive pattern crossing the slit, on the insulative sheet;    mounting a semiconductor device chip on the insulative sheet to electrically connect an external terminal of the semiconductor device chip to the conductive pattern;    bonding at least a part of the first region of the insulative sheet on which the semiconductor device chip is mounted to a circuit board; and    separating the second region from the first region to leave the first region on the circuit board.