Method for manufacturing semiconductor thin film, and magnetoelectric conversion element provided with semiconductor thin film thereby manufactured

Abstract

A method for manufacturing a semiconductor thin film having high carrier mobility, and a magnetoelectric conversion element provided with the semiconductor thin film manufactured by the aforementioned method are provided. The temperature of the Si single crystal substrate is raised to 270° C. to 320° C., and an In buffer layer is formed by an electron beam heating type vacuum evaporation method. Subsequently, an initial seed layer made of Sb and In is formed. The temperature of the Si single crystal substrate is raised to 460° C. to 480° C., and thereafter, a retention time approximated by a predetermined function of the temperature of the Si single crystal substrate is provided. Then, a main growth layer made of Sb and In is formed.

1 - 28 . (canceled)  
   
   
       29 . An electronic component comprising: 
 a substrate made of a silicon single crystal material and having a surface from which a surface oxide film has been removed, said surface being a hydrogen terminated surface;    a semiconductor thin film including: 
 a buffer layer including indium disposed on said surface of said substrate;  
 an initial seed layer including indium disposed on said buffer layer;  
 a main growth layer including indium and antimony disposed on said initial seed layer; and  
   at least one of a short circuit electrode, a terminal electrode, and a protection film disposed on said main growth layer.    
   
   
       30 . The electronic component according to  claim 29 , wherein the carrier mobility of the semiconductor thin film is at least about 45,000 cm 2 /V·s.  
   
   
       31 . The electronic component according to  claim 29 , wherein the substrate has an n-type (111) surface, a thickness of about 200 mm to about 500 mm, and a resistivity of at least about 1 kW·cm.  
   
   
       31 . The electronic component according to  claim 29 , further comprising a meandrous magnetic resistance pattern disposed on said main growth layer.  
   
   
       33 . The electronic component according to  claim 31 , wherein said at least one of the short circuit electrode, the terminal electrode, and the protection film disposed on said main growth layer includes at least two terminal electrodes disposed adjacent to the meandrous magnetic resistance pattern at two ends of the substrate.  
   
   
       34 . The electronic component according to claim  32 , wherein said at least one of the short circuit electrode, the terminal electrode, and the protection film disposed on said main growth layer includes a short circuit electrode connected to the meandrous magnetic resistance pattern.  
   
   
       35 . The electronic component according to  claim 29 , wherein the at least one of the short circuit electrode, the terminal electrode, and the protection film disposed on said main growth layer is composed of Ni, Ti, Cr, Cu, Ge, Au, or Al, or an alloy thereof.  
   
   
       36 . A magnetic sensor comprising: 
 a circuit substrate have a first surface and a second surface;    an electronic component according to claim  32  disposed on the first surface of said circuit substrate;    a magnet for applying a biasing magnetic field to the electronic component disposed on the second surface of said circuit substrate; and    a non-magnetic protection case accommodating said circuit substrate, said electronic component and said magnet.    
   
   
       37 . The magnetic sensor according to  claim 36 , further comprising: 
 at least two terminals; and    at least two lead frames; wherein    said circuit substrate includes through holes and said electronic component includes at least two terminal electrodes disposed adjacent to the meandrous magnetic resistance pattern at two ends of the substrate;    said at least two terminals are disposed in said through holes; and    said at least two terminals and said at least two terminal electrodes are connected to each other via said at least two lead frames.    
   
   
       38 . A magnetoelectric conversion element comprising: 
 a substrate made of a silicon single crystal material and having a surface from which a surface oxide film has been removed, said surface being a hydrogen terminated surface;    a semiconductor thin film including: 
 a buffer layer including indium disposed on said surface of said substrate;  
 an initial seed layer including indium disposed on said buffer layer;  
 a main growth layer including indium and antimony disposed on said initial seed layer; and  
   a plurality of terminal electrodes disposed on said main growth layer.    
   
   
       39 . The electronic component according to  claim 38 , wherein the carrier mobility of the semiconductor thin film is at least about 45,000 cm 2 /V·s.  
   
   
       40 . The magnetoelectric conversion element according to  claim 38 , further comprising a hall-effect pattern disposed on said main growth layer, wherein said plurality of terminal electrodes are connected to said hall-effect pattern.  
   
   
       41 . The magnetoelectric conversion element according to  claim 40 , wherein said hall-effect pattern is cross-shaped, and said plurality of terminal electrodes are connected to ends of the cross-shaped hall-effect pattern so as to be arranged along edges of the substrate.  
   
   
       42 . The magnetoelectric conversion element according to  claim 38 , wherein said plurality of terminal electrodes are composed of Ni, Ti, Cr, Cu, Ge, Au, or Al, or an alloy thereof.