Ceramic substrate, ceramic heater, electrostatic chuck and wafer prober for use in semiconductor producing and inspecting devices

Abstract

A ceramic substrate for semiconductor manufacture and/or inspection which is conducive to decrease in α-rays radiated, to prevent electrical errors, and to decrease an electrostatic chucking force such as heater or wafer prober, generation of particles, and circuit defects. The ceramic substrate is configured such that the level of α-rays radiated from the surface of the ceramic substrate is not higher than 0.250 c/cm 2 ·hr.

1 - 4 . (Canceled).  
   
   
       5 . A ceramic substrate for apparatuses for use in semiconductor manufacture and/or inspection, 
 wherein the level of α-rays radiated from the surface thereof is not higher than 0.250 c/cm 2 ·hr.    
   
   
       6 . A ceramic heater comprising a ceramic substrate and a heating element disposed on the surface or internally thereof, 
 wherein the level of α-rays radiated from the surface of said ceramic substrate is not higher than 0.250 c/cm 2 ·hr.    
   
   
       7 . An electrostatic chuck comprising a ceramic substrate and electrodes embedded therein, 
 wherein the level of α-rays radiated from the surface of said ceramic substrate is not higher than 0.250 c/cm 2 ·hr.    
   
   
       8 . A wafer prober comprising a ceramic substrate and a conductive layer formed on the surface thereof, 
 wherein the level of α-rays radiated from the surface of said ceramic substrate is not higher than 0.250 c/cm 2 ·hr.