Source gas delivery

Abstract

A method and system are provided for delivering a source gas to a processing chamber. A source gas delivery method includes providing a precursor chamber configured to hold precursor vapor, providing a saturated precursor vapor at a selected pressure within the precursor, chamber, and flowing or diffusing saturated precursor vapor from the precursor chamber to the processing chamber until a selected pressure is provided in the processing chamber. A source gas delivery system includes a precursor chamber configured to hold precursor vapor, a heat source for heating a precursor liquid to provide saturated precursor vapor at a selected pressure within the precursor chamber, and a vapor pathway allowing saturated precursor vapor to enter a processing chamber until a selected pressure is provided in the processing chamber. Advantageously, the present invention allows for improved precursor vapor delivery and enhanced control over thin film deposition with less waste of precursor material.

1 - 27 . cancel  
   
   
       28 . A source gas delivery system, comprising: 
 a precursor chamber configured to hold precursor vapor;    a heat source for heating a precursor liquid to provide saturated precursor vapor at a selected pressure within the precursor chamber; and    a vapor pathway allowing saturated precursor vapor to enter a processing chamber until a target pressure is provided within the processing chamber.    
   
   
       29 . The system of  claim 28 , wherein the precursor chamber is configured to hold a precursor liquid.  
   
   
       30 . The system of  claim 29 , wherein the precursor liquid is selected from the group consisting tantalum pentaethoxide (TAETO), triethylaluminum (TEA), trimethylaluminum (TMA), triethlyphosphorous (TEP), triethylgallium (TEGa), SiCl 4 , GeCl 4 , and HCl.  
   
   
       31 . The system of  claim 28 , wherein the precursor chamber is a batch precursor chamber.  
   
   
       32 . The system of  claim 28 , wherein the precursor chamber is operably coupled to a precursor liquid source.  
   
   
       33 . The system of  claim 28 , wherein the heat source comprises a temperature-controlled heating bath.  
   
   
       34 . The system of  claim 28 , wherein the heat source heats the precursor liquid to temperatures between approximately 50° C. and approximately 220° C.  
   
   
       35 . The system of  claim 28 , wherein the saturated precursor vapor has a selected pressure ranging from approximately 0.001 Torr to approximately 100 Torr.  
   
   
       36 . The system of  claim 28 , wherein the saturated precursor vapor has a mole percentage in the processing chamber ranging from approximately 0.1% to approximately 50%.  
   
   
       37 . The system of  claim 28 , further comprising a flow gas pathway operably coupled to the precursor chamber.  
   
   
       38 . The system of  claim 28 , further comprising a vacuum pump operably coupled to the processing chamber.  
   
   
       39 . The system of  claim 28 , further comprising a pressure sensor operably coupled to the precursor chamber and the processing chamber.  
   
   
       40 . A source gas delivery system, comprising: 
 a precursor chamber configured to hold precursor vapor, the precursor chamber including a first diameter;    a heat source for heating a precursor liquid to provide saturated precursor vapor at a selected pressure within the precursor chamber; and    a vapor pathway allowing saturated precursor vapor to enter a processing chamber until a target pressure is provided within the processing chamber, the processing chamber having a second diameter, wherein a ratio of the first diameter and the second diameter is used to control precursor vapor delivery through the vapor pathway.    
   
   
       41 . The system of  claim 40 , wherein the first diameter is between about 25 mm and about 300 mm.  
   
   
       42 . The system of  claim 40 , wherein the second diameter is between about 50 mm and about 1,000 mm.  
   
   
       43 . The system of  claim 40 , wherein the precursor chamber is configured to hold a precursor liquid.  
   
   
       44 . The system of  claim 43 , wherein the precursor liquid is selected from the group consisting tantalum pentaethoxide (TAETO), triethylaluminum (TEA), trimethylaluminum (TMA), triethlyphosphorous (TEP), triethylgallium (TEGa), SiCl 4 , GeCl 4 , and HCl.  
   
   
       45 . The system of  claim 40 , wherein the precursor chamber is a batch precursor chamber.  
   
   
       46 . The system of  claim 40 , wherein the precursor chamber is operably coupled to a precursor liquid source.  
   
   
       47 . The system of  claim 40 , further comprising a flow gas pathway operably coupled to the precursor chamber.