Method of manufacturing thin-film magnetic head

Abstract

A lower shield layer is formed (S 101 ). Subsequently, an MR device is formed (S 103 ), and pinning/annealing is carried out (S 105 ). The pinning/annealing provides exchange coupling between an antiferromagnetic layer and a pinned layer. Then, a domain control layer and electrode layers are formed (S 107 ), and an upper shield layer is formed (S 109 ). Thereafter, the domain control layer is magnetized in a direction yielding a longitudinal bias magnetic field (S 111 ). Next, a recording head part is formed (S 113 ). Then, a support in which a plurality of thin-film magnetic heads are formed so as to be arranged in a matrix is cut into a plurality of bars each comprising a plurality of thin-film magnetic heads arranged integrally (S 115 ).

1 . A method of manufacturing a thin-film magnetic head comprising a magnetoresistive device including an antiferromagnetic layer, a ferromagnetic layer whose direction of magnetization is fixed upon exchange-coupling with the antiferromagnetic layer, a free layer whose direction of magnetization changes in response to external magnetization, and a nonmagnetic layer disposed between the ferromagnetic layer and the free layer; a domain control layer for regulating a magnetic domain of the free layer by applying a longitudinal bias magnetic field thereto; and first and second shield layers, disposed so as to oppose each other by way of the magnetoresistive device, for shielding the magnetoresistive device; 
 the method comprising:    a step of forming the first shield layer;    a step of forming the magnetoresistive device, carried out after the step of forming the first shield layer;    a heat treatment step of providing exchange coupling between the ferromagnetic layer and the antiferromagnetic layer so as to magnetize the ferromagnetic layer in a predetermined direction;    a step of forming the domain control layer so as to hold the magnetoresistive device in a track width direction;    a step of forming the second shield layer, carried out after the step of forming the domain control layer; and    a step of forming the magnetizing the domain control layer in a direction yielding the longitudinal bias magnetic field, carried out after the step of forming the second shield layer.    
   
   
       2 . The method of manufacturing a thin-film magnetic head according to  claim 1 , further comprising a step of forming a recording head part; 
 wherein the step of magnetizing the domain control layer is carried out prior to the step of forming the recording head part.    
   
   
       3 . The method of manufacturing a thin-film magnetic head according to  claim 1 , wherein a plurality of thin-film magnetic heads are formed so as to be arranged in a matrix on a wafer; 
 wherein the method further comprises a step of cutting the wafer into a plurality of bars each comprising a plurality of thin-film magnetic heads arranged integrally; and    wherein the step of magnetizing the domain control layer is carried out prior to the step of cutting the wafer.    
   
   
       4 . The method of manufacturing a thin-film magnetic head according to  claim 1 , wherein the antiferromagnetic layer comprises an IrMn alloy.  
   
   
       5 . A method of manufacturing a thin-film magnetic head comprising a magnetoresistive device including an antiferromagnetic layer, a ferromagnetic layer whose direction of magnetization is fixed upon exchange-coupling with the antiferromagnetic layer, a free layer whose direction of magnetization changes in response to external magnetization, and a nonmagnetic layer disposed between the ferromagnetic layer and the free layer; a domain control layer for regulating a magnetic domain of the free layer by applying a longitudinal bias magnetic field thereto; and first and second shield layers, disposed so as to oppose each other by way of the magnetoresistive device, for shielding the magnetoresistive device; 
 the method comprising:    a step of forming the first shield layer;    a step of forming the magnetoresistive device, carried out after the step of forming the first shield layer;    a heat treatment step of providing exchange coupling between the ferromagnetic layer and the antiferromagnetic layer so as to magnetize the ferromagnetic layer in a predetermined direction;    a step of forming the domain control layer so as to hold the magnetoresistive device in a track width direction;    a step of magnetizing the domain control layer in a direction yielding a magnetic field in the same direction as with a magnetic field received by the ferromagnetic layer upon exchange-coupling with the antiferromagnetic layer;    a step of forming the second shield layer, carried out after the step of magnetizing the domain control layer; and    a step of remagnetizing the domain control layer in a direction yielding the longitudinal bias magnetic field, carried out after the step of forming the second shield layer.    
   
   
       6 . The method of manufacturing a thin-film magnetic head according to  claim 5 , further comprising a step of forming a recording head part; 
 wherein the step of remagnetizing the domain control layer is carried out prior to the step of forming the recording head part.    
   
   
       7 . The method of manufacturing a thin-film magnetic head according to  claim 5 , wherein a plurality of thin-film magnetic heads are formed so as to be arranged in a matrix on a wafer; 
 wherein the method further comprises a step of cutting the wafer into a plurality of bars each comprising a plurality of thin-film magnetic heads arranged integrally; and    wherein the step of remagnetizing the domain control layer is carried out prior to the step of cutting the wafer.    
   
   
       8 . A method of manufacturing a thin-film magnetic head according to  claim 5 , wherein the antiferromagnetic layer comprises an IrMn alloy.