US2005026441A1PendingUtilityA1

Abrasive used for planarization of semiconductor device and method of manufacturing semiconductor device using the abrasive

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Assignee: TOSHIBA KKPriority: Aug 22, 2002Filed: Aug 31, 2004Published: Feb 3, 2005
Est. expiryAug 22, 2022(expired)· nominal 20-yr term from priority
Inventors:Jun Takayasu
H10P 95/062C09K 3/14C09K 3/1436
43
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Claims

Abstract

An abrasive for a semiconductor device comprises cerium oxide particles and coating materials. The cerium oxide particles are made principally of cerium oxide (CeO 2 ). The coating materials cover the surface of the cerium oxide particles.

Claims

exact text as granted — not AI-modified
1 .- 8 . (Canceled)  
   
   
       9 . A method of manufacturing a semiconductor device, comprising polishing the surface of a thin film formed on a semiconductor substrate by using abrasive particles including cerium oxide particles made principally of cerium oxide and coated with coating materials.  
   
   
       10 . The method of manufacturing a semiconductor device according to  claim 9 , wherein said polishing uses said cerium oxide particles contained in said abrasive particles for polishing said thin film surface when there is an uneven portion on said surface, and uses said coating material contained in said abrasive particles for polishing said surface when there are no uneven portions on said surface.  
   
   
       11 . The method of manufacturing a semiconductor device according to  claim 9 , wherein said process of polishing uses said cerium oxide particles separated from said coating material for polishing an uneven portion when there is an uneven portion on said polishing surface, and uses said coating material contained in said cerium oxide for polishing said surface when there are no uneven portions on said surface.  
   
   
       12 . The method of manufacturing a semiconductor device according to  claim 9 , wherein said coating materials are in the form of particles.  
   
   
       13 . The method of manufacturing a semiconductor device according to  claim 9 , wherein said coating materials are in the form of a thin film.  
   
   
       14 . The method of manufacturing a semiconductor device according to  claim 9 , wherein said coating materials are composed principally of silicon oxide (SiO 2 ).  
   
   
       15 . The method of manufacturing a semiconductor device according to  claim 9 , wherein said coating materials are composed principally of aluminum oxide (Al 2 O 3 ).  
   
   
       16 . The method of manufacturing a semiconductor device according to  claim 9 , wherein said cerium oxide is made principally of CeO 2 .  
   
   
       17 . The method of manufacturing a semiconductor device according to  claim 14 , wherein said cerium oxide is made principally of CeO 2 .  
   
   
       18 . The method of manufacturing a semiconductor device according to  claim 15 , wherein said cerium oxide is made principally of CeO 2 .

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