Liquid crystal display device and method for fabricating the same

Abstract

A liquid crystal display device includes a first substrate having a plurality of thin film transistors and a plurality of metal lines, a first insulation material layer formed on the metal lines, a second insulation material layer formed on the first insulation material layer on the metal lines, a first hole formed in the second insulation material layer over at least two of the metal lines, a second contact hole formed in the first and second insulation layers exposing a drain electrode of the thin film transistors, a pixel electrode connected to the drain electrode through the second contact hole, a sealing material formed within the first hole, a second substrate bonded to the first substrate via the sealing material, and a liquid crystal material disposed between the first and second substrates.

1 . A liquid crystal display device, comprising: 
 a first substrate having a plurality of thin film transistors and a plurality of metal lines;    a first insulation material layer formed on the metal lines;    a second insulation material layer formed on the first insulation material layer on the metal lines;    a first hole formed in the second insulation material layer over at least two of the metal lines;    a second contact hole formed in the first and second insulation layers exposing a drain electrode of the thin film transistors;    a pixel electrode connected to the drain electrode through the second contact hole;    a sealing material formed within the first hole;    a second substrate bonded to the first substrate via the sealing material; and    a liquid crystal material disposed between the first and second substrates.    
     
     
         2 . The device according to  claim 1 , wherein the first insulation material layer includes at least one inorganic insulating material and the second insulation material layer includes at least one organic insulating material.  
     
     
         3 . The device according to  claim 2 , wherein the at least one organic insulating material include at least one of photo acryl and benzocyclobutene.  
     
     
         4 . The device according to  claim 1 , wherein the thin film transistor comprises: 
 a gate electrode formed on the first substrate;    a gate insulation layer formed on the gate electrode and an entire surface of the first substrate;    a semiconductor layer formed on the gate insulation layer; and    a source/drain electrode formed on the semiconductor layer.    
     
     
         5 - 9 . (Canceled).  
     
     
         10 . A liquid crystal display device, comprising: 
 a first substrate having a pixel region and a sealing region;    a plurality of metal lines disposed within the sealing region;    a thin film transistor disposed within the pixel region;    a first electrically insulating material disposed over the metal lines and the thin film transistor;    a second electrically insulating material, different from the first electrically insulating material, disposed on the first electrically insulating material layer over the metal lines and the thin film transistor;    a first hole formed within the second electrically insulating material over the metal lines;    a second hole formed within the first and second electrically insulating materials exposing a drain electrode of the thin film transistor;    a pixel electrode electrically connected to the drain electrode through the second hole;    a sealing material formed within the first hole contacting the first electrically insulating material;    a second substrate bonded to the first substrate via the sealing material; and    a liquid crystal material disposed between the first and second substrates.    
     
     
         11 . The device according to  claim 10 , wherein the first electrically insulating material includes inorganic insulating materials and the second electrically insulating material includes organic insulating materials.  
     
     
         12 . The device according to  claim 11 , wherein the organic insulating materials include at least one of photo acryl and benzocyclobutene.  
     
     
         13 . The device according to  claim 10 , wherein the thin film transistor comprises: 
 a gate electrode formed directly on a first surface of the first substrate;    a gate insulation layer formed on the gate electrode and the entire first surface of the first substrate;    a semiconductor layer formed on the gate insulation layer; and    a source/drain electrode formed on the semiconductor layer.    
     
     
         14 . The device according to  claim 13 , wherein the first electrically insulating material is disposed on the source/drain electrode.  
     
     
         15 . The device according to  claim 10 , wherein the first electrically insulating material include a plurality of concave portions formed between each of the plurality of metal lines.  
     
     
         16 . The device according to  claim 15 , wherein the sealing material contacts at least two of the plurality of concave portions of the first electrically insulating material.  
     
     
         17 . The device according to  claim 10 , wherein the sealing material contacts the second electrically insulating material.  
     
     
         18 . The device according to  claim 10 , wherein the sealing material extends past sidewalls of the first hole along an upper surface of the second electrically insulating material.  
     
     
         19 . The device according to  claim 10 , wherein the sealing material contacts concave and convex portions of the first electrically insulating material at a bottom portion of the first hole.  
     
     
         20 . The device according to  claim 19 , wherein the sealing material contacts sidewall portions of the second electrically insulating material within the first hole.